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Conference Paper: Split-Drain Magnetic Field-Effect Transistor Channel Charge Trapping and Stress Induced Sensitivity Deterioration
Title | Split-Drain Magnetic Field-Effect Transistor Channel Charge Trapping and Stress Induced Sensitivity Deterioration |
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Authors | |
Keywords | Magnetic field-effect transistor (MAGFET) Sectorial Sensitivity Sensitivity deterioration Split-drain |
Issue Date | 2014 |
Citation | The 3rd International Symposium on Advanced Magnetic Materials and Applications (ISAMMA), Taiwan, 21-25 July 2013. In IEEE Transactions on Magnetics, 2014, v. 50 n. 1, p. article no. 4000304 How to Cite? |
Abstract | This paper proposed an analytical model on the deterioration of magnetic sensitivity of sectorial split-drain magnetic field-effect transistors (SD-MAGFETs). The deterioration is governed by the trap fill rate at the channel boundary traps, which is geometric dependent. Experimental results are presented which show good consistency with the analytical derivation. The deterioration is the most severe at a sector angle of 54.6°, which shows a design tradeoff with sensing hysteresis. Design guidelines for sectorial SD-MAGFET to obtain high sensitivity hysteresis and slow sensitivity deterioration are also presented which provide important information for efficient design. © 2013 IEEE. |
Description | Session EB: Materials for Applications |
Persistent Identifier | http://hdl.handle.net/10722/186736 |
ISSN | 2023 Impact Factor: 2.1 2023 SCImago Journal Rankings: 0.729 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Yang, Z | en_US |
dc.contributor.author | Siu, SL | en_US |
dc.contributor.author | Tam, WS | en_US |
dc.contributor.author | Kok, CW | en_US |
dc.contributor.author | Leung, CW | en_US |
dc.contributor.author | Lai, PT | en_US |
dc.contributor.author | Wong, H | en_US |
dc.contributor.author | Tang, WM | en_US |
dc.contributor.author | Pong, PWT | - |
dc.date.accessioned | 2013-08-20T12:19:20Z | - |
dc.date.available | 2013-08-20T12:19:20Z | - |
dc.date.issued | 2014 | en_US |
dc.identifier.citation | The 3rd International Symposium on Advanced Magnetic Materials and Applications (ISAMMA), Taiwan, 21-25 July 2013. In IEEE Transactions on Magnetics, 2014, v. 50 n. 1, p. article no. 4000304 | en_US |
dc.identifier.issn | 0018-9464 | - |
dc.identifier.uri | http://hdl.handle.net/10722/186736 | - |
dc.description | Session EB: Materials for Applications | - |
dc.description.abstract | This paper proposed an analytical model on the deterioration of magnetic sensitivity of sectorial split-drain magnetic field-effect transistors (SD-MAGFETs). The deterioration is governed by the trap fill rate at the channel boundary traps, which is geometric dependent. Experimental results are presented which show good consistency with the analytical derivation. The deterioration is the most severe at a sector angle of 54.6°, which shows a design tradeoff with sensing hysteresis. Design guidelines for sectorial SD-MAGFET to obtain high sensitivity hysteresis and slow sensitivity deterioration are also presented which provide important information for efficient design. © 2013 IEEE. | - |
dc.language | eng | en_US |
dc.relation.ispartof | IEEE Transactions on Magnetics | en_US |
dc.subject | Magnetic field-effect transistor (MAGFET) | - |
dc.subject | Sectorial | - |
dc.subject | Sensitivity | - |
dc.subject | Sensitivity deterioration | - |
dc.subject | Split-drain | - |
dc.title | Split-Drain Magnetic Field-Effect Transistor Channel Charge Trapping and Stress Induced Sensitivity Deterioration | en_US |
dc.type | Conference_Paper | en_US |
dc.identifier.email | Pong, PWT: ppong@eee.hku.hk | en_US |
dc.identifier.authority | Pong, PWT=rp00217 | en_US |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1109/TMAG.2013.2279849 | - |
dc.identifier.scopus | eid_2-s2.0-84901643695 | - |
dc.identifier.hkuros | 219837 | en_US |
dc.identifier.hkuros | 235978 | - |
dc.identifier.volume | 50 | - |
dc.identifier.issue | 1 | - |
dc.identifier.eissn | 1941-0069 | - |
dc.identifier.isi | WOS:000330026800090 | - |
dc.identifier.issnl | 0018-9464 | - |