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Patent History
- ApplicationUS 11/690188 2007-03-23
- PublicationUS 2008105955 2008-05-08
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published patent: Method For Epitaxial Growth of (110)-Oriented SrTiO3 Thin Films on Silicon Without Template
Title | Method For Epitaxial Growth of (110)-Oriented SrTiO3 Thin Films on Silicon Without Template |
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Priority Date | 2007-03-23 US 11/690188 2006-03-23 US 11/785668P |
Inventors | |
Issue Date | 2008 |
Citation | US Published patent application US 2008105955. Washington, DC: US Patent and Trademark Office (USPTO), 2008 How to Cite? |
Abstract | A process and structure utilizes pulsed laser deposition technique to grow SrTiO3 (STO) films with single ( 110 ) out-of-plane orientation upon a surface of all ( 100 ), ( 110 ) and ( 111 )-oriented silicon (Si) substrates. No designed buffer layer is needed beneath the STO thin films. The in-plane alignments for the epitaxial STO films grown directly on Si ( 100 ) are as STO [ 001 ]//Si [ 001 ] and STO [ 1 |
Persistent Identifier | http://hdl.handle.net/10722/176959 |
DC Field | Value | Language |
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dc.date.accessioned | 2012-11-30T08:38:51Z | - |
dc.date.available | 2012-11-30T08:38:51Z | - |
dc.date.issued | 2008 | - |
dc.identifier.citation | US Published patent application US 2008105955. Washington, DC: US Patent and Trademark Office (USPTO), 2008 | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/176959 | - |
dc.description.abstract | A process and structure utilizes pulsed laser deposition technique to grow SrTiO3 (STO) films with single ( 110 ) out-of-plane orientation upon a surface of all ( 100 ), ( 110 ) and ( 111 )-oriented silicon (Si) substrates. No designed buffer layer is needed beneath the STO thin films. The in-plane alignments for the epitaxial STO films grown directly on Si ( 100 ) are as STO [ 001 ]//Si [ 001 ] and STO [ 1 <O OSTYLE="SINGLE"> 1 0 ]/Si [ 010 ]. The SrTiO3/Si interface is epitaxially crystallized without any amorphous oxide layer. The formation of a coincident site lattice at the interface between Si and a Sr-silicate and/or STO helps to stabilize STO in the epitaxial orientation. The invention can be applied to epitaxial template and barrier for the integration of many other functional oxide materials on silicon.; In particular, the ( 110 )-oriented STO structure is useful for practical applications such as the preparation of ferroelectric-insulator-semiconductor devices as well as providing a broad solution to the generic problem of polarity discontinuities at perovskite heterointerfaces. | en_HK |
dc.title | Method For Epitaxial Growth of (110)-Oriented SrTiO3 Thin Films on Silicon Without Template | en_HK |
dc.type | Patent | en_US |
dc.description.nature | published_or_final_version | en_US |
dc.contributor.inventor | Hao Jianhua | en_HK |
dc.contributor.inventor | Gao, J | en_HK |
patents.identifier.application | US 11/690188 | en_HK |
patents.description.assignee | THE UNIVERSITY OF HONG KONG | en_HK |
patents.description.country | United States of America | en_HK |
patents.date.publication | 2008-05-08 | en_HK |
patents.date.application | 2007-03-23 | en_HK |
patents.date.priority | 2007-03-23 US 11/690188 | en_HK |
patents.date.priority | 2006-03-23 US 11/785668P | en_HK |
patents.description.cc | US | en_HK |
patents.identifier.publication | US 2008105955 | en_HK |
patents.relation.family | US 2008105955 (A1) 2008-05-08 | en_HK |
patents.relation.family | US 7718516 (B2) 2010-05-18 | en_HK |
patents.description.kind | A1 | en_HK |
patents.type | Patent_published | en_HK |