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Patent History
- ApplicationUS 09/008022 2001-11-05
- PublicationUS 2002096429 2002-07-25
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published patent: Josephson junctions with a continually graded barrier
| Title | Josephson junctions with a continually graded barrier |
|---|---|
| Priority Date | 2001-11-05 US 09/008022 2000-11-06 US 09/246172P |
| Inventors | |
| Issue Date | 2002 |
| Citation | US Published patent application US 2002096429. Washington, DC: US Patent and Trademark Office (USPTO), 2002 How to Cite? |
| Abstract | A Josephson junction includes first and second electrodes, each of which is formed of superconductive material. The first electrode has a first electrode face. A barrier of the junction extends from the first electrode to the second electrode. The barrier has a first barrier face opposing and adjoining the first electrode face. The barrier is formed of non-superconductive barrier material and superconductive barrier material. A concentration of the superconductive barrier material is greater than zero at the first barrier face, whereby the first barrier face is formed at least partially of the superconductive barrier material. |
| Persistent Identifier | http://hdl.handle.net/10722/176824 |
| DC Field | Value | Language |
|---|---|---|
| dc.date.accessioned | 2012-11-30T08:38:32Z | - |
| dc.date.available | 2012-11-30T08:38:32Z | - |
| dc.date.issued | 2002 | - |
| dc.identifier.citation | US Published patent application US 2002096429. Washington, DC: US Patent and Trademark Office (USPTO), 2002 | en_HK |
| dc.identifier.uri | http://hdl.handle.net/10722/176824 | - |
| dc.description.abstract | A Josephson junction includes first and second electrodes, each of which is formed of superconductive material. The first electrode has a first electrode face. A barrier of the junction extends from the first electrode to the second electrode. The barrier has a first barrier face opposing and adjoining the first electrode face. The barrier is formed of non-superconductive barrier material and superconductive barrier material. A concentration of the superconductive barrier material is greater than zero at the first barrier face, whereby the first barrier face is formed at least partially of the superconductive barrier material. | en_HK |
| dc.title | Josephson junctions with a continually graded barrier | en_HK |
| dc.type | Patent | en_US |
| dc.description.nature | published_or_final_version | en_US |
| dc.contributor.inventor | Gao, J | en_HK |
| dc.contributor.inventor | Sun Jinglan | en_HK |
| patents.identifier.application | US 09/008022 | en_HK |
| patents.description.assignee | GAO JU, ; SUN JINGLAN, ; THE UNIVERSITY OF HONG KONG | en_HK |
| patents.description.country | United States of America | en_HK |
| patents.date.publication | 2002-07-25 | en_HK |
| patents.date.application | 2001-11-05 | en_HK |
| patents.date.priority | 2001-11-05 US 09/008022 | en_HK |
| patents.date.priority | 2000-11-06 US 09/246172P | en_HK |
| patents.description.cc | US | en_HK |
| patents.identifier.publication | US 2002096429 | en_HK |
| patents.relation.family | US 2002096429 (A1) 2002-07-25 | en_HK |
| patents.relation.family | US 6818918 (B2) 2004-11-16 | en_HK |
| patents.description.kind | A1 | en_HK |
| patents.type | Patent_published | en_HK |