File Download
There are no files associated with this item.
Supplementary
-
Citations:
- Appears in Collections:
Conference Paper: Fast three-dimensional simulation of silicon nanowire transistors with asymptotic waveform evaluation
Title | Fast three-dimensional simulation of silicon nanowire transistors with asymptotic waveform evaluation |
---|---|
Authors | |
Keywords | Asymptotic waveform evaluation (AWE) Complex frequency hopping (CFH) Silicon nanowire FinFET Quantum transport Surface roughness Nano-MOSFETs |
Issue Date | 2012 |
Publisher | Curran Associates, Inc.. |
Citation | The 28th Annual Review of Progress in Applied Computational Electromagnetics, Columbus, OH., 10-14 April 2012. In Conference Proceedings, 2012, v. 2, p. 651-655 How to Cite? |
Abstract | Full three dimensional simulation of quantum transport in silicon nanowire transistors is very computationally challenging, as it requires solving a large Hamiltonian matrix repeatedly within an energy band. To accelerate the simulation, asymptotic waveform evaluation (AWE) technique combined with complex frequency hopping (CFH) is introduced in this paper. The accuracy and efficiency of the method are demonstrated by simulation of a triple gate MOSFET in the presence of surface roughness. |
Description | Session - Multi-Physics Modeling and Simulations |
Persistent Identifier | http://hdl.handle.net/10722/165210 |
ISBN |
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Huang, J | en_US |
dc.contributor.author | Chew, WC | en_US |
dc.contributor.author | Tang, M | en_US |
dc.contributor.author | Jiang, L | en_US |
dc.contributor.author | Yin, WY | en_US |
dc.date.accessioned | 2012-09-20T08:16:19Z | - |
dc.date.available | 2012-09-20T08:16:19Z | - |
dc.date.issued | 2012 | en_US |
dc.identifier.citation | The 28th Annual Review of Progress in Applied Computational Electromagnetics, Columbus, OH., 10-14 April 2012. In Conference Proceedings, 2012, v. 2, p. 651-655 | en_US |
dc.identifier.isbn | 9781622762385 | - |
dc.identifier.uri | http://hdl.handle.net/10722/165210 | - |
dc.description | Session - Multi-Physics Modeling and Simulations | - |
dc.description.abstract | Full three dimensional simulation of quantum transport in silicon nanowire transistors is very computationally challenging, as it requires solving a large Hamiltonian matrix repeatedly within an energy band. To accelerate the simulation, asymptotic waveform evaluation (AWE) technique combined with complex frequency hopping (CFH) is introduced in this paper. The accuracy and efficiency of the method are demonstrated by simulation of a triple gate MOSFET in the presence of surface roughness. | - |
dc.language | eng | en_US |
dc.publisher | Curran Associates, Inc.. | - |
dc.relation.ispartof | 28th Annual Review of Progress in Applied Computational Electromagnetics 2012: proceedings | en_US |
dc.subject | Asymptotic waveform evaluation (AWE) | - |
dc.subject | Complex frequency hopping (CFH) | - |
dc.subject | Silicon nanowire | - |
dc.subject | FinFET | - |
dc.subject | Quantum transport | - |
dc.subject | Surface roughness | - |
dc.subject | Nano-MOSFETs | - |
dc.title | Fast three-dimensional simulation of silicon nanowire transistors with asymptotic waveform evaluation | en_US |
dc.type | Conference_Paper | en_US |
dc.identifier.email | Chew, WC: wcchew@hku.hk | en_US |
dc.identifier.email | Jiang, L: jianglj@hku.hk | en_US |
dc.identifier.authority | Chew, WC=rp00656 | en_US |
dc.identifier.authority | Jiang, L=rp01338 | en_US |
dc.identifier.hkuros | 207533 | en_US |
dc.identifier.volume | 2 | - |
dc.identifier.spage | 651 | - |
dc.identifier.epage | 655 | - |
dc.publisher.place | United States | - |