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Conference Paper: A study on hydrogen adsorption of Metal-Insulator-Silicon sensor with La2O3 as gate insulator

TitleA study on hydrogen adsorption of Metal-Insulator-Silicon sensor with La2O3 as gate insulator
Authors
Chen, GLai, PTYu, J
KeywordsSilicon
Schottky diode
Hydrogen sensor
Issue Date2010
PublisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1000853
Citation
The 2010 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC 2010), Hong Kong, China, 15-17 December 2010. In IEEE EDSSC Proceedings, 2010, p. 1-4 How to Cite?
DOI: http://dx.doi.org/10.1109/EDSSC.2010.5713689
AbstractA new Metal-Insulator-Silicon (MIS) Schottky-diode hydrogen sensor with La203 as gate insulator was fabricated. Its hydrogen-sensing properties were studied from room temperature (RT) to 200°C. Results showed that the device had excellent hydrogen-sensing performance below about 250°C. Furthermore, hydrogen reaction kinetics was confirmed for the sample. The response time extracted from its hydrogen adsorption transient behavior was around 4.5 s at 150°C, while a hydrogen adsorption activation energy of 10.9 kcal/mol was obtained for the sensor.
Persistent Identifierhttp://hdl.handle.net/10722/160264
ISBN
978-1-4244-9996-0

 

DC FieldValueLanguage
dc.contributor.authorChen, Gen_US
dc.contributor.authorLai, PTen_US
dc.contributor.authorYu, Jen_US
dc.date.accessioned2012-08-16T06:06:40Z-
dc.date.available2012-08-16T06:06:40Z-
dc.date.issued2010en_US
dc.identifier.citationThe 2010 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC 2010), Hong Kong, China, 15-17 December 2010. In IEEE EDSSC Proceedings, 2010, p. 1-4en_US
dc.identifier.isbn978-1-4244-9996-0-
dc.identifier.urihttp://hdl.handle.net/10722/160264-
dc.description.abstractA new Metal-Insulator-Silicon (MIS) Schottky-diode hydrogen sensor with La203 as gate insulator was fabricated. Its hydrogen-sensing properties were studied from room temperature (RT) to 200°C. Results showed that the device had excellent hydrogen-sensing performance below about 250°C. Furthermore, hydrogen reaction kinetics was confirmed for the sample. The response time extracted from its hydrogen adsorption transient behavior was around 4.5 s at 150°C, while a hydrogen adsorption activation energy of 10.9 kcal/mol was obtained for the sensor.-
dc.languageengen_US
dc.publisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1000853-
dc.relation.ispartofIEEE Conference on Electron Devices and Solid-State Circuits Proceedingsen_US
dc.rights©2010 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.-
dc.subjectSilicon-
dc.subjectSchottky diode-
dc.subjectHydrogen sensor-
dc.titleA study on hydrogen adsorption of Metal-Insulator-Silicon sensor with La2O3 as gate insulatoren_US
dc.typeConference_Paperen_US
dc.identifier.emailChen, G: hkgchen@hku.hken_US
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.emailYu, J: jcwyu@hku.hk-
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1109/EDSSC.2010.5713689-
dc.identifier.scopuseid_2-s2.0-79952505156-
dc.identifier.hkuros204661en_US
dc.identifier.spage1-
dc.identifier.epage4-
dc.publisher.placeUnited States-

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