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- Publisher Website: 10.1016/S1369-8001(02)00019-7
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Conference Paper: Dislocation scattering in n-GaN
| Title | Dislocation scattering in n-GaN |
|---|---|
| Authors | |
| Issue Date | 2001 |
| Publisher | Pergamon. The Journal's web site is located at http://www.elsevier.com/locate/mssp |
| Citation | Materials Science In Semiconductor Processing, 2001, v. 4 n. 6, p. 567-570 How to Cite? |
| Abstract | The scattering of carriers due to dislocations is studied. Unlike semiconductors such as Si or GaAs, the major scattering mechanism for undoped or lightly doped samples is dislocation scattering instead of ionized impurity scattering. It was found that for GaN samples in the dislocation scattering region, the mobility is a function of the dislocation density and free carrier concentration, via a μdis ∝ √n/Ndis relationship. Temperature-variation mobility plots also indicate that a T3/2 dependence component is present, which is also attributed to dislocation scattering. © 2002 Published by Elsevier Science Ltd. |
| Persistent Identifier | http://hdl.handle.net/10722/158322 |
| ISSN | 2023 Impact Factor: 4.2 2023 SCImago Journal Rankings: 0.732 |
| ISI Accession Number ID | |
| References |
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Choi, HW | en_US |
| dc.contributor.author | Zhang, J | en_US |
| dc.contributor.author | Chua, SJ | en_US |
| dc.date.accessioned | 2012-08-08T08:59:04Z | - |
| dc.date.available | 2012-08-08T08:59:04Z | - |
| dc.date.issued | 2001 | en_US |
| dc.identifier.citation | Materials Science In Semiconductor Processing, 2001, v. 4 n. 6, p. 567-570 | en_US |
| dc.identifier.issn | 1369-8001 | en_US |
| dc.identifier.uri | http://hdl.handle.net/10722/158322 | - |
| dc.description.abstract | The scattering of carriers due to dislocations is studied. Unlike semiconductors such as Si or GaAs, the major scattering mechanism for undoped or lightly doped samples is dislocation scattering instead of ionized impurity scattering. It was found that for GaN samples in the dislocation scattering region, the mobility is a function of the dislocation density and free carrier concentration, via a μdis ∝ √n/Ndis relationship. Temperature-variation mobility plots also indicate that a T3/2 dependence component is present, which is also attributed to dislocation scattering. © 2002 Published by Elsevier Science Ltd. | en_US |
| dc.language | eng | en_US |
| dc.publisher | Pergamon. The Journal's web site is located at http://www.elsevier.com/locate/mssp | en_US |
| dc.relation.ispartof | Materials Science in Semiconductor Processing | en_US |
| dc.title | Dislocation scattering in n-GaN | en_US |
| dc.type | Conference_Paper | en_US |
| dc.identifier.email | Choi, HW:hwchoi@eee.hku.hk | en_US |
| dc.identifier.authority | Choi, HW=rp00108 | en_US |
| dc.description.nature | link_to_subscribed_fulltext | en_US |
| dc.identifier.doi | 10.1016/S1369-8001(02)00019-7 | en_US |
| dc.identifier.scopus | eid_2-s2.0-0035574325 | en_US |
| dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-0035574325&selection=ref&src=s&origin=recordpage | en_US |
| dc.identifier.volume | 4 | en_US |
| dc.identifier.issue | 6 | en_US |
| dc.identifier.spage | 567 | en_US |
| dc.identifier.epage | 570 | en_US |
| dc.identifier.isi | WOS:000175066200019 | - |
| dc.publisher.place | United Kingdom | en_US |
| dc.identifier.scopusauthorid | Choi, HW=7404334877 | en_US |
| dc.identifier.scopusauthorid | Zhang, J=16403575100 | en_US |
| dc.identifier.scopusauthorid | Chua, SJ=35516064500 | en_US |
| dc.identifier.issnl | 1369-8001 | - |