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Conference Paper: RTP formed oxynitride via direct nitridation in N 2

TitleRTP formed oxynitride via direct nitridation in N 2
Authors
Khoueir, ALu, ZHNg, WTTay, SPLai, PT
Issue Date2000
Citation
Proceedings Of The Ieee Hong Kong Electron Devices Meeting, 2000, p. 104-107 How to Cite?
AbstractA method using direct nitridation in N 2 is presented. Two different processing approaches are used to produce rapid thermal processing (RTP) nitrided oxides or oxynitrides. The first approach is the direct nitridation of the Si surface with N 2 gas at an elevated temperature (>1150 °C) to form Si 3N 4 followed by O 2 oxidation, while the second involves O 2 oxidation of the Si wafer to form SiO 2 followed by N 2 nitridation. The ultrathin films are electrically characterized and its viability as a SiO 2 substitute is proven for future CMOS device generations.
Persistent Identifierhttp://hdl.handle.net/10722/158294

 

DC FieldValueLanguage
dc.contributor.authorKhoueir, Aen_US
dc.contributor.authorLu, ZHen_US
dc.contributor.authorNg, WTen_US
dc.contributor.authorTay, SPen_US
dc.contributor.authorLai, PTen_US
dc.date.accessioned2012-08-08T08:58:56Z-
dc.date.available2012-08-08T08:58:56Z-
dc.date.issued2000en_US
dc.identifier.citationProceedings Of The Ieee Hong Kong Electron Devices Meeting, 2000, p. 104-107en_US
dc.identifier.urihttp://hdl.handle.net/10722/158294-
dc.description.abstractA method using direct nitridation in N 2 is presented. Two different processing approaches are used to produce rapid thermal processing (RTP) nitrided oxides or oxynitrides. The first approach is the direct nitridation of the Si surface with N 2 gas at an elevated temperature (>1150 °C) to form Si 3N 4 followed by O 2 oxidation, while the second involves O 2 oxidation of the Si wafer to form SiO 2 followed by N 2 nitridation. The ultrathin films are electrically characterized and its viability as a SiO 2 substitute is proven for future CMOS device generations.en_US
dc.languageengen_US
dc.relation.ispartofProceedings of the IEEE Hong Kong Electron Devices Meetingen_US
dc.titleRTP formed oxynitride via direct nitridation in N 2en_US
dc.typeConference_Paperen_US
dc.identifier.emailLai, PT:laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0034475449en_US
dc.identifier.spage104en_US
dc.identifier.epage107en_US
dc.identifier.scopusauthoridKhoueir, A=6506783745en_US
dc.identifier.scopusauthoridLu, ZH=24360510000en_US
dc.identifier.scopusauthoridNg, WT=7401613512en_US
dc.identifier.scopusauthoridTay, SP=7102586556en_US
dc.identifier.scopusauthoridLai, PT=7202946460en_US

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