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Conference Paper: Mechanism analysis of gate-induced drain leakage in off-state n-MOSFET

TitleMechanism analysis of gate-induced drain leakage in off-state n-MOSFET
Authors
Huang, LLai, PTXu, JPCheng, YC
Issue Date1997
Citation
Proceedings Of The Ieee Hong Kong Electron Devices Meeting, 1997, p. 94-97 How to Cite?
AbstractAn analytical expression for gate-induced drain leakage (GIDL) current based on indirect tunneling theory is described, which can be used for both band-to-band and band-trap-band tunnelings. The voltage and temperature dependence of GIDL and hot-carrier-induced drain leakage are investigated. Experiment shows that interface traps participate in the conduction of GIDL and indirect band-trap-band tunneling could be a major mechanism responsible for GIDL.
Persistent Identifierhttp://hdl.handle.net/10722/158231

 

DC FieldValueLanguage
dc.contributor.authorHuang, Len_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorXu, JPen_HK
dc.contributor.authorCheng, YCen_HK
dc.date.accessioned2012-08-08T08:58:39Z-
dc.date.available2012-08-08T08:58:39Z-
dc.date.issued1997en_HK
dc.identifier.citationProceedings Of The Ieee Hong Kong Electron Devices Meeting, 1997, p. 94-97en_US
dc.identifier.urihttp://hdl.handle.net/10722/158231-
dc.description.abstractAn analytical expression for gate-induced drain leakage (GIDL) current based on indirect tunneling theory is described, which can be used for both band-to-band and band-trap-band tunnelings. The voltage and temperature dependence of GIDL and hot-carrier-induced drain leakage are investigated. Experiment shows that interface traps participate in the conduction of GIDL and indirect band-trap-band tunneling could be a major mechanism responsible for GIDL.en_HK
dc.languageengen_US
dc.relation.ispartofProceedings of the IEEE Hong Kong Electron Devices Meetingen_HK
dc.titleMechanism analysis of gate-induced drain leakage in off-state n-MOSFETen_HK
dc.typeConference_Paperen_HK
dc.identifier.emailLai, PT: laip@eee.hku.hken_HK
dc.identifier.emailXu, JP: jpxu@eee.hku.hken_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.identifier.authorityXu, JP=rp00197en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0031366552en_HK
dc.identifier.spage94en_HK
dc.identifier.epage97en_HK
dc.identifier.scopusauthoridHuang, L=35205328500en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.scopusauthoridXu, JP=7407004696en_HK
dc.identifier.scopusauthoridCheng, YC=27167728600en_HK

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