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Conference Paper: THERMIONIC-DIFFUSION MODEL OF POLYSILICON EMITTER.

TitleTHERMIONIC-DIFFUSION MODEL OF POLYSILICON EMITTER.
Authors
Ng, Chung CYang, Edward S
Issue Date1986
Citation
Technical Digest - International Electron Devices Meeting, 1986, p. 32-35 How to Cite?
AbstractA model has been developed to characterize the hole current through an n-type polysilicon emitter in terms of thermionic emission acting in series with drift-diffusion. The thermionic emission results from the steep potential barrier which is induced by impurity segregation at the polysilicon-silicon interface. The total hole current, according to this model, depends on the peak doping concentration and the Gummel number of the monosilicon region of the emitter.
Persistent Identifierhttp://hdl.handle.net/10722/154863
ISSN
0163-1918
2023 SCImago Journal Rankings: 1.047

 

DC FieldValueLanguage
dc.contributor.authorNg, Chung Cen_US
dc.contributor.authorYang, Edward Sen_US
dc.date.accessioned2012-08-08T08:30:58Z-
dc.date.available2012-08-08T08:30:58Z-
dc.date.issued1986en_US
dc.identifier.citationTechnical Digest - International Electron Devices Meeting, 1986, p. 32-35en_US
dc.identifier.issn0163-1918en_US
dc.identifier.urihttp://hdl.handle.net/10722/154863-
dc.description.abstractA model has been developed to characterize the hole current through an n-type polysilicon emitter in terms of thermionic emission acting in series with drift-diffusion. The thermionic emission results from the steep potential barrier which is induced by impurity segregation at the polysilicon-silicon interface. The total hole current, according to this model, depends on the peak doping concentration and the Gummel number of the monosilicon region of the emitter.en_US
dc.languageengen_US
dc.relation.ispartofTechnical Digest - International Electron Devices Meetingen_US
dc.titleTHERMIONIC-DIFFUSION MODEL OF POLYSILICON EMITTER.en_US
dc.typeConference_Paperen_US
dc.identifier.emailYang, Edward S:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, Edward S=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0023027253en_US
dc.identifier.spage32en_US
dc.identifier.epage35en_US
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridNg, Chung C=36747472600en_US
dc.identifier.scopusauthoridYang, Edward S=7202021229en_US
dc.identifier.issnl0163-1918-

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