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Conference Paper: Nanoscale Al-Al and Cu-Cu contacts

TitleNanoscale Al-Al and Cu-Cu contacts
Authors
Liu, QMcCormick, DTRoberts, RCTien, NC
KeywordsAl
Asperity
Contact resistance
Cu
MEMS switch
Nanoscale
Native oxide
NEMS
Issue Date2007
Citation
Transducers And Eurosensors '07 - 4Th International Conference On Solid-State Sensors, Actuators And Microsystems, 2007, p. 1593-1596 How to Cite?
DOI: http://dx.doi.org/10.1109/SENSOR.2007.4300452
AbstractThis paper reports that the forces needed to break Al and Cu native oxide are 0 to 3 μN, and 0 to 0.5 μN, respectively, remarkably less than the previously reported 0.1 N force requirement of breaking Al native oxide. Our modeling and experimental results indicate that nanoscale contact resistance is dominated by local hardening instead of contact force as in conventional contact theories. A microswitch featuring a 60 to 80 nm thick contact electrode is fabricated to demonstrate nanoscale Al contacts. ©2007 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/149024
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorLiu, Qen_HK
dc.contributor.authorMcCormick, DTen_HK
dc.contributor.authorRoberts, RCen_HK
dc.contributor.authorTien, NCen_HK
dc.date.accessioned2012-06-20T06:17:57Z-
dc.date.available2012-06-20T06:17:57Z-
dc.date.issued2007en_HK
dc.identifier.citationTransducers And Eurosensors '07 - 4Th International Conference On Solid-State Sensors, Actuators And Microsystems, 2007, p. 1593-1596en_US
dc.identifier.urihttp://hdl.handle.net/10722/149024-
dc.description.abstractThis paper reports that the forces needed to break Al and Cu native oxide are 0 to 3 μN, and 0 to 0.5 μN, respectively, remarkably less than the previously reported 0.1 N force requirement of breaking Al native oxide. Our modeling and experimental results indicate that nanoscale contact resistance is dominated by local hardening instead of contact force as in conventional contact theories. A microswitch featuring a 60 to 80 nm thick contact electrode is fabricated to demonstrate nanoscale Al contacts. ©2007 IEEE.en_HK
dc.languageengen_US
dc.relation.ispartofTRANSDUCERS and EUROSENSORS '07 - 4th International Conference on Solid-State Sensors, Actuators and Microsystemsen_HK
dc.subjectAlen_HK
dc.subjectAsperityen_HK
dc.subjectContact resistanceen_HK
dc.subjectCuen_HK
dc.subjectMEMS switchen_HK
dc.subjectNanoscaleen_HK
dc.subjectNative oxideen_HK
dc.subjectNEMSen_HK
dc.titleNanoscale Al-Al and Cu-Cu contactsen_HK
dc.typeConference_Paperen_HK
dc.identifier.emailRoberts, RC: rcr8@hku.hken_HK
dc.identifier.emailTien, NC: nctien@hku.hken_HK
dc.identifier.authorityRoberts, RC=rp01738en_HK
dc.identifier.authorityTien, NC=rp01604en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1109/SENSOR.2007.4300452en_HK
dc.identifier.scopuseid_2-s2.0-50049104151en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-50049104151&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.spage1593en_HK
dc.identifier.epage1596en_HK
dc.identifier.scopusauthoridLiu, Q=36066088500en_HK
dc.identifier.scopusauthoridMcCormick, DT=7202521902en_HK
dc.identifier.scopusauthoridRoberts, RC=24466830100en_HK
dc.identifier.scopusauthoridTien, NC=7006532826en_HK

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