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Conference Paper: Ultra-wide tuning range silicon MEMS capacitors on glass with tera-ohm isolation and low parasitics

TitleUltra-wide tuning range silicon MEMS capacitors on glass with tera-ohm isolation and low parasitics
Authors
McCormick, DTTien, NCMacDonald, NMatthews, RHibbs, A
KeywordsCapacitors
Low-parasitic
Microelectromechanical devices
Tunable circuits and devices
Varactor
Issue Date2005
Citation
Digest Of Technical Papers - International Conference On Solid State Sensors And Actuators And Microsystems, Transducers '05, 2005, v. 1, p. 1075-1079 How to Cite?
DOI: http://dx.doi.org/10.1109/SENSOR.2005.1496642
AbstractTheoretical and experimental results of a design methodology and fabrication technology to realize ultra-wide tuning range, electrostatic, silicon micromachined capacitors are presented. The varactors achieve a maximum tuning range of approximately 4000% and exhibit a linear tuning range of 1000% (C vs. V 2). The devices are also designed and characterized with tera-ohm isolation and sub 30fF capacitive coupling between the driving actuator and tuning element. In addition, parasitic capacitances have been minimized to less than 22fF at the tuning element terminals. © 2005 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/149009
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorMcCormick, DTen_HK
dc.contributor.authorTien, NCen_HK
dc.contributor.authorMacDonald, Nen_HK
dc.contributor.authorMatthews, Ren_HK
dc.contributor.authorHibbs, Aen_HK
dc.date.accessioned2012-06-20T06:17:50Z-
dc.date.available2012-06-20T06:17:50Z-
dc.date.issued2005en_HK
dc.identifier.citationDigest Of Technical Papers - International Conference On Solid State Sensors And Actuators And Microsystems, Transducers '05, 2005, v. 1, p. 1075-1079en_US
dc.identifier.urihttp://hdl.handle.net/10722/149009-
dc.description.abstractTheoretical and experimental results of a design methodology and fabrication technology to realize ultra-wide tuning range, electrostatic, silicon micromachined capacitors are presented. The varactors achieve a maximum tuning range of approximately 4000% and exhibit a linear tuning range of 1000% (C vs. V 2). The devices are also designed and characterized with tera-ohm isolation and sub 30fF capacitive coupling between the driving actuator and tuning element. In addition, parasitic capacitances have been minimized to less than 22fF at the tuning element terminals. © 2005 IEEE.en_HK
dc.languageengen_US
dc.relation.ispartofDigest of Technical Papers - International Conference on Solid State Sensors and Actuators and Microsystems, TRANSDUCERS '05en_HK
dc.subjectCapacitorsen_HK
dc.subjectLow-parasiticen_HK
dc.subjectMicroelectromechanical devicesen_HK
dc.subjectTunable circuits and devicesen_HK
dc.subjectVaractoren_HK
dc.titleUltra-wide tuning range silicon MEMS capacitors on glass with tera-ohm isolation and low parasiticsen_HK
dc.typeConference_Paperen_HK
dc.identifier.emailTien, NC: nctien@hku.hken_HK
dc.identifier.authorityTien, NC=rp01604en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1109/SENSOR.2005.1496642en_HK
dc.identifier.scopuseid_2-s2.0-27544480933en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-27544480933&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume1en_HK
dc.identifier.spage1075en_HK
dc.identifier.epage1079en_HK
dc.identifier.scopusauthoridMcCormick, DT=7202521902en_HK
dc.identifier.scopusauthoridTien, NC=7006532826en_HK
dc.identifier.scopusauthoridMacDonald, N=36476609100en_HK
dc.identifier.scopusauthoridMatthews, R=7402909719en_HK
dc.identifier.scopusauthoridHibbs, A=7004275519en_HK

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