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Conference Paper: A micromachined RF microrelay with electrothermal actuation
Title | A micromachined RF microrelay with electrothermal actuation |
---|---|
Authors | |
Keywords | Electrothermal actuator Lateral contact Low voltage Microrelay RF switch |
Issue Date | 2003 |
Publisher | Elsevier SA. The Journal's web site is located at http://www.elsevier.com/locate/sna |
Citation | Sensors And Actuators, A: Physical, 2003, v. 103 n. 1-2, p. 231-236 How to Cite? |
Abstract | This paper reports the design and fabrication of a low-voltage lateral-contact microrelay for RF applications. The silicon surface micromachined relay utilizes electrothermal actuators and low-stress silicon nitride as a structural connection as well as electrical and thermal isolation. The sidewall contact is sputtered gold. The driving voltage is measured to be as low as 8 V. RF testing shows that the microrelay has an off-state isolation of -20 dB at 12 GHz. The simplicity of this four-mask fabrication process provides the possibility of integration with other passive RF MEMS components. © 2003 Elsevier Science B.V. All rights reserved. |
Persistent Identifier | http://hdl.handle.net/10722/149001 |
ISSN | 2023 Impact Factor: 4.1 2023 SCImago Journal Rankings: 0.788 |
ISI Accession Number ID | |
References |
DC Field | Value | Language |
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dc.contributor.author | Wang, Y | en_HK |
dc.contributor.author | Li, Z | en_HK |
dc.contributor.author | McCormick, DT | en_HK |
dc.contributor.author | Tien, NC | en_HK |
dc.date.accessioned | 2012-06-20T06:17:47Z | - |
dc.date.available | 2012-06-20T06:17:47Z | - |
dc.date.issued | 2003 | en_HK |
dc.identifier.citation | Sensors And Actuators, A: Physical, 2003, v. 103 n. 1-2, p. 231-236 | en_US |
dc.identifier.issn | 0924-4247 | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/149001 | - |
dc.description.abstract | This paper reports the design and fabrication of a low-voltage lateral-contact microrelay for RF applications. The silicon surface micromachined relay utilizes electrothermal actuators and low-stress silicon nitride as a structural connection as well as electrical and thermal isolation. The sidewall contact is sputtered gold. The driving voltage is measured to be as low as 8 V. RF testing shows that the microrelay has an off-state isolation of -20 dB at 12 GHz. The simplicity of this four-mask fabrication process provides the possibility of integration with other passive RF MEMS components. © 2003 Elsevier Science B.V. All rights reserved. | en_HK |
dc.language | eng | en_US |
dc.publisher | Elsevier SA. The Journal's web site is located at http://www.elsevier.com/locate/sna | en_HK |
dc.relation.ispartof | Sensors and Actuators, A: Physical | en_HK |
dc.subject | Electrothermal actuator | en_HK |
dc.subject | Lateral contact | en_HK |
dc.subject | Low voltage | en_HK |
dc.subject | Microrelay | en_HK |
dc.subject | RF switch | en_HK |
dc.title | A micromachined RF microrelay with electrothermal actuation | en_HK |
dc.type | Conference_Paper | en_HK |
dc.identifier.email | Tien, NC: nctien@hku.hk | en_HK |
dc.identifier.authority | Tien, NC=rp01604 | en_HK |
dc.description.nature | link_to_subscribed_fulltext | en_US |
dc.identifier.doi | 10.1016/S0924-4247(02)00337-0 | en_HK |
dc.identifier.scopus | eid_2-s2.0-0037439026 | en_HK |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-0037439026&selection=ref&src=s&origin=recordpage | en_HK |
dc.identifier.volume | 103 | en_HK |
dc.identifier.issue | 1-2 | en_HK |
dc.identifier.spage | 231 | en_HK |
dc.identifier.epage | 236 | en_HK |
dc.identifier.isi | WOS:000180418200032 | - |
dc.publisher.place | Switzerland | en_HK |
dc.identifier.scopusauthorid | Wang, Y=7601495931 | en_HK |
dc.identifier.scopusauthorid | Li, Z=24306828000 | en_HK |
dc.identifier.scopusauthorid | McCormick, DT=7202521902 | en_HK |
dc.identifier.scopusauthorid | Tien, NC=7006532826 | en_HK |
dc.identifier.issnl | 0924-4247 | - |