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Article: Monolithic transformer with underlying deep silicon-oxide block

TitleMonolithic transformer with underlying deep silicon-oxide block
Authors
Issue Date2002
PublisherThe Institution of Engineering and Technology. The Journal's web site is located at http://www.ieedl.org/EL
Citation
Electronics Letters, 2002, v. 38 n. 3, p. 142-144 How to Cite?
AbstractA method to improve the performance of on-chip monolithic transformers is presented. A transformer with a 20 μm-deep silicon-oxide block beneath has a self-resonant frequency of 9.75 GHz and a quality factor of 10.1. These values are 72 and 124% better, respectively, than those of the same device built on 4.1 μm-thick silicon oxide.
Persistent Identifierhttp://hdl.handle.net/10722/148944
ISSN
2023 Impact Factor: 0.7
2023 SCImago Journal Rankings: 0.323
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorJiang, Hen_HK
dc.contributor.authorTien, NCen_HK
dc.date.accessioned2012-06-20T06:16:58Z-
dc.date.available2012-06-20T06:16:58Z-
dc.date.issued2002en_HK
dc.identifier.citationElectronics Letters, 2002, v. 38 n. 3, p. 142-144en_HK
dc.identifier.issn0013-5194en_HK
dc.identifier.urihttp://hdl.handle.net/10722/148944-
dc.description.abstractA method to improve the performance of on-chip monolithic transformers is presented. A transformer with a 20 μm-deep silicon-oxide block beneath has a self-resonant frequency of 9.75 GHz and a quality factor of 10.1. These values are 72 and 124% better, respectively, than those of the same device built on 4.1 μm-thick silicon oxide.en_HK
dc.languageengen_US
dc.publisherThe Institution of Engineering and Technology. The Journal's web site is located at http://www.ieedl.org/ELen_HK
dc.relation.ispartofElectronics Lettersen_HK
dc.titleMonolithic transformer with underlying deep silicon-oxide blocken_HK
dc.typeArticleen_HK
dc.identifier.emailTien, NC: nctien@hku.hken_HK
dc.identifier.authorityTien, NC=rp01604en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1049/el:20020085en_HK
dc.identifier.scopuseid_2-s2.0-0037204064en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0037204064&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume38en_HK
dc.identifier.issue3en_HK
dc.identifier.spage142en_HK
dc.identifier.epage144en_HK
dc.identifier.isiWOS:000173870400028-
dc.publisher.placeUnited Kingdomen_HK
dc.identifier.scopusauthoridJiang, H=36120322000en_HK
dc.identifier.scopusauthoridTien, NC=7006532826en_HK
dc.identifier.issnl0013-5194-

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