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Article: Selective chemical etching of InP over InAlAs

TitleSelective chemical etching of InP over InAlAs
Authors
He, YanLiang, BWTien, NCTu, CW
Issue Date1992
PublisherElectrochemical Society, Inc. The Journal's web site is located at http://ojps.aip.org/JES
Citation
Journal Of The Electrochemical Society, 1992, v. 139 n. 7, p. 2046-2048 How to Cite?
AbstractWe report the selective chemical etching of InP/InAlAs heterostructures. The selectivity of InP over InAlAs by 1:1:2 of HCl:H 3PO 4:CH 3COOH is above 85. Better-defined mesa etching patterns, however, are obtained by a solution with lower CH 3COOH content such as 1:1:1 with a selectivity of 34. The etching recipe reported here is promising for InP-based heterostructure device applications.
Persistent Identifierhttp://hdl.handle.net/10722/148925
ISSN
0013-4651
2023 Impact Factor: 3.1
2023 SCImago Journal Rankings: 0.868
ISI Accession Number ID
WOS:A1992JD39200050

 

DC FieldValueLanguage
dc.contributor.authorHe, Yanen_HK
dc.contributor.authorLiang, BWen_HK
dc.contributor.authorTien, NCen_HK
dc.contributor.authorTu, CWen_HK
dc.date.accessioned2012-06-20T06:16:50Z-
dc.date.available2012-06-20T06:16:50Z-
dc.date.issued1992en_HK
dc.identifier.citationJournal Of The Electrochemical Society, 1992, v. 139 n. 7, p. 2046-2048en_HK
dc.identifier.issn0013-4651en_HK
dc.identifier.urihttp://hdl.handle.net/10722/148925-
dc.description.abstractWe report the selective chemical etching of InP/InAlAs heterostructures. The selectivity of InP over InAlAs by 1:1:2 of HCl:H 3PO 4:CH 3COOH is above 85. Better-defined mesa etching patterns, however, are obtained by a solution with lower CH 3COOH content such as 1:1:1 with a selectivity of 34. The etching recipe reported here is promising for InP-based heterostructure device applications.en_HK
dc.languageengen_US
dc.publisherElectrochemical Society, Inc. The Journal's web site is located at http://ojps.aip.org/JESen_HK
dc.relation.ispartofJournal of the Electrochemical Societyen_HK
dc.titleSelective chemical etching of InP over InAlAsen_HK
dc.typeArticleen_HK
dc.identifier.emailTien, NC: nctien@hku.hken_HK
dc.identifier.authorityTien, NC=rp01604en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0026895987en_HK
dc.identifier.volume139en_HK
dc.identifier.issue7en_HK
dc.identifier.spage2046en_HK
dc.identifier.epage2048en_HK
dc.identifier.isiWOS:A1992JD39200050-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridHe, Yan=7404942028en_HK
dc.identifier.scopusauthoridLiang, BW=7202071204en_HK
dc.identifier.scopusauthoridTien, NC=7006532826en_HK
dc.identifier.scopusauthoridTu, CW=35401048600en_HK
dc.identifier.issnl0013-4651-

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