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Patent History
- ApplicationUS 11/065413 2005-02-24
- PublicationUS 20050196685 2005-09-08
- GrantedUS 7569308 2009-08-04
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granted patent: Rectangular Contact Lithography For Circuit Performance Improvement And Manufacture Cost Reduction
Title | Rectangular Contact Lithography For Circuit Performance Improvement And Manufacture Cost Reduction |
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Granted Patent | US 7569308 |
Granted Date | 2009-08-04 |
Priority Date | 2005-02-24 US 11/065413 2004-02-24 US 11/546948P |
Inventors | |
Issue Date | 2009 |
Citation | US Patent 7569308. Washington, DC: US Patent and Trademark Office (USPTO), 2009 How to Cite? |
Abstract | An Optical Lithography Method Is Disclosed That Uses Double Exposure Of A Reusable Template Mask And A Trim Mask To Fabricate Regularly-Placed Rectangular Contacts In Standard Cells Of Application-Specific Integrated Circuits (Asics). A First Exposure Of The Reusable Template Mask With Periodic Patterns Forms Periodic Dark Lines On A Wafer And A Second Exposure Of An Application-Specific Trim Mask Remove The Unwanted Part Of The Dark Lines And The Small Cuts Of The Dark Lines Left Form The Rectangular Regularly-Placed Contacts. All Contacts Are Placed Regularly In One Direction While Unrestrictedly In The Perpendicular Direction. The Regular Placement Of Patterns On The Template Mask Enable More Effective Use Of Resolution Enhancement Technologies, Which In Turn Allows A Decrease In Manufacturing Cost And The Minimum Contact Size And Pitch.; Since There Is No Extra Application-Specific Mask Needed Comparing With The Conventional Lithography Method For Unrestrictedly-Placed Contacts, The Extra Cost Is Kept To The Lowest. The Method Of The Invention Can Be Used In The Fabrication Of Standard Cells In Application-Specific Integrated Circuits (Asics) To Improve Circuit Performance And Decrease Circuit Area And Manufacturing Cost. |
Persistent Identifier | http://hdl.handle.net/10722/142141 |
DC Field | Value | Language |
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dc.date.accessioned | 2011-10-19T06:30:09Z | - |
dc.date.available | 2011-10-19T06:30:09Z | - |
dc.date.issued | 2009 | - |
dc.identifier.citation | US Patent 7569308. Washington, DC: US Patent and Trademark Office (USPTO), 2009 | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/142141 | - |
dc.description.abstract | An Optical Lithography Method Is Disclosed That Uses Double Exposure Of A Reusable Template Mask And A Trim Mask To Fabricate Regularly-Placed Rectangular Contacts In Standard Cells Of Application-Specific Integrated Circuits (Asics). A First Exposure Of The Reusable Template Mask With Periodic Patterns Forms Periodic Dark Lines On A Wafer And A Second Exposure Of An Application-Specific Trim Mask Remove The Unwanted Part Of The Dark Lines And The Small Cuts Of The Dark Lines Left Form The Rectangular Regularly-Placed Contacts. All Contacts Are Placed Regularly In One Direction While Unrestrictedly In The Perpendicular Direction. The Regular Placement Of Patterns On The Template Mask Enable More Effective Use Of Resolution Enhancement Technologies, Which In Turn Allows A Decrease In Manufacturing Cost And The Minimum Contact Size And Pitch.; Since There Is No Extra Application-Specific Mask Needed Comparing With The Conventional Lithography Method For Unrestrictedly-Placed Contacts, The Extra Cost Is Kept To The Lowest. The Method Of The Invention Can Be Used In The Fabrication Of Standard Cells In Application-Specific Integrated Circuits (Asics) To Improve Circuit Performance And Decrease Circuit Area And Manufacturing Cost. | en_HK |
dc.relation.isreferencedby | US 2009249259 (A1) 2009-10-01 | en_HK |
dc.relation.isreferencedby | US 8079008 (B2) 2011-12-13 | en_HK |
dc.relation.isreferencedby | US 2009057743 (A1) 2009-03-05 | en_HK |
dc.relation.isreferencedby | US 8021933 (B2) 2011-09-20 | en_HK |
dc.relation.isreferencedby | US 2008203586 (A1) 2008-08-28 | en_HK |
dc.relation.isreferencedby | US 7763987 (B2) 2010-07-27 | en_HK |
dc.relation.isreferencedby | US 2008197394 (A1) 2008-08-21 | en_HK |
dc.relation.isreferencedby | US 7867912 (B2) 2011-01-11 | en_HK |
dc.title | Rectangular Contact Lithography For Circuit Performance Improvement And Manufacture Cost Reduction | en_HK |
dc.type | Patent | en_US |
dc.identifier.email | Lam, Edmund Y:elam@eee.hku.hk | en_US |
dc.identifier.email | Wang, Jun:junwang@eee.hku.hk | en_US |
dc.identifier.email | Wong, Alfred Kwok Kit: | en_US |
dc.identifier.authority | Lam, Edmund Y=rp00131 | en_US |
dc.description.nature | published_or_final_version | - |
dc.contributor.inventor | Wang, Jun | en_US |
dc.contributor.inventor | Wong, Alfred Kwok Kit | en_US |
dc.contributor.inventor | Lam, Edmund Y | en_US |
patents.identifier.application | US 11/065413 | en_HK |
patents.identifier.granted | US 7569308 | en_HK |
patents.description.assignee | Univ Hong Kong [Cn] | en_HK |
patents.description.country | United States of America | en_HK |
patents.date.publication | 2005-09-08 | en_HK |
patents.date.granted | 2009-08-04 | en_HK |
patents.identifier.hkutechid | EEE-2004-00154-1 | en_US |
patents.date.application | 2005-02-24 | en_HK |
patents.date.priority | 2005-02-24 US 11/065413 | en_HK |
patents.date.priority | 2004-02-24 US 11/546948P | en_HK |
patents.description.cc | US | en_HK |
patents.identifier.publication | US 20050196685 | en_HK |
patents.relation.family | US 2005196685 (A1) 2005-09-08 | en_HK |
patents.relation.family | US 7569308 (B2) 2009-08-04 | en_HK |
patents.relation.family | WO 2005081066 (A1) 2005-09-01 | en_HK |
patents.description.kind | B2 | en_HK |
patents.type | Patent_granted | en_HK |