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Conference Paper: Effects of sputtering and annealing temperatures on MOS capacitor with HfTiON gate dielectric

TitleEffects of sputtering and annealing temperatures on MOS capacitor with HfTiON gate dielectric
Authors
Wang, CDLi, CXLeung, CHLai, PT
KeywordsAnnealing temperatures
Conduction mechanism
Electron detrapping
Flat-band voltage
Flat-band voltage shift
Issue Date2009
PublisherIEEE.
Citation
The IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC 2009), Xi'an, China, 25-27 December 2009. In Proceedings of EDSSC, 2009, p. 209-212 How to Cite?
DOI: http://dx.doi.org/10.1109/EDSSC.2009.5394283
AbstractIn this work, Al/HfTiON/n-Si capacitors with different sputtering and annealing temperatures are studied. Larger accumulation capacitance and flat-band voltage are observed for samples with higher sputtering or post-deposition annealing temperature. Gate conduction mechanisms are only affected by sputtering temperature slightly. The flat-band voltage shift and interface-state density at midgap under high-field gate injection and substrate injection are investigated, and the results imply electron detrapping in the gate dielectric. ©2009 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/126086
ISBN
978-1-4244-4297-3
ISI Accession Number ID
WOS:000289818000053
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorWang, CDen_HK
dc.contributor.authorLi, CXen_HK
dc.contributor.authorLeung, CHen_HK
dc.contributor.authorLai, PTen_HK
dc.date.accessioned2010-10-31T12:09:02Z-
dc.date.available2010-10-31T12:09:02Z-
dc.date.issued2009en_HK
dc.identifier.citationThe IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC 2009), Xi'an, China, 25-27 December 2009. In Proceedings of EDSSC, 2009, p. 209-212en_HK
dc.identifier.isbn978-1-4244-4297-3-
dc.identifier.urihttp://hdl.handle.net/10722/126086-
dc.description.abstractIn this work, Al/HfTiON/n-Si capacitors with different sputtering and annealing temperatures are studied. Larger accumulation capacitance and flat-band voltage are observed for samples with higher sputtering or post-deposition annealing temperature. Gate conduction mechanisms are only affected by sputtering temperature slightly. The flat-band voltage shift and interface-state density at midgap under high-field gate injection and substrate injection are investigated, and the results imply electron detrapping in the gate dielectric. ©2009 IEEE.en_HK
dc.languageengen_HK
dc.publisherIEEE.-
dc.relation.ispartofProceedings of the IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2009en_HK
dc.rights©2009 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.-
dc.subjectAnnealing temperatures-
dc.subjectConduction mechanism-
dc.subjectElectron detrapping-
dc.subjectFlat-band voltage-
dc.subjectFlat-band voltage shift-
dc.titleEffects of sputtering and annealing temperatures on MOS capacitor with HfTiON gate dielectricen_HK
dc.typeConference_Paperen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=978-1-4244-4297-3&volume=&spage=209&epage=212&date=2009&atitle=Effects+of+sputtering+and+annealing+temperatures+on+MOS+capacitor+with+HfTiON+gate+dielectric-
dc.identifier.emailLeung, CH:chleung@eee.hku.hken_HK
dc.identifier.emailLai, PT:laip@eee.hku.hken_HK
dc.identifier.authorityLeung, CH=rp00146en_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1109/EDSSC.2009.5394283en_HK
dc.identifier.scopuseid_2-s2.0-77949626432en_HK
dc.identifier.hkuros179096en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-77949626432&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.spage209en_HK
dc.identifier.epage212en_HK
dc.identifier.isiWOS:000289818000053-
dc.description.otherThe IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC 2009), Xi'an, China, 25-27 December 2009. In Proceedings of EDSSC, 2009, p. 209-212-
dc.identifier.scopusauthoridWang, CD=7501645623en_HK
dc.identifier.scopusauthoridLi, CX=22034888200en_HK
dc.identifier.scopusauthoridLeung, CH=7402612415en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK

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