Showing results 1 to 8 of 8
| Title | Author(s) | Issue Date | |
|---|---|---|---|
Growth of Si1-xGex heterostructures using gas-source molecular beam epitaxy Journal:International Journal of Optoelectronics | 1994 | ||
Growth rate dependence on GeH4 during gas source MBE of SixGe 1-x alloys grown from Si2H6 and GeH4 Journal:Journal of Crystal Growth | 1993 | ||
| 1992 | |||
Initial stage of GaN growth and its implication to defect formation in films Journal:Physical Review B (Condensed Matter) | 2001 | ||
Reduction of threading defects in GaN grown on vicinal SiC(0001) by molecular-beam epitaxy Journal:Applied Physics Letters | 2000 | ||
| 1993 | |||
Step bunching of vicinal GaN(0001) surfaces during molecular beam epitaxy Journal:Physical Review B (Condensed Matter) | 2000 | ||
Transient growth rate change during gas source molecular beam epitaxy of Si1-xGex alloys Journal:Applied Physics Letters | 1993 |