|
2d material |
4 |
|
diamond membrane |
4 |
|
flexible devices |
4 |
|
heterojunction |
4 |
|
self-powered |
4 |
|
ultraviolet detector |
4 |
|
diamond film |
3 |
|
diamond metasurface |
3 |
|
flexible display |
3 |
|
gallium nitride |
3 |
|
gan |
3 |
|
hemt |
3 |
|
nano-fabrication |
3 |
|
structural color |
3 |
|
2-d electron gas |
2 |
|
2d materials |
2 |
|
activation |
2 |
|
artificial neurons |
2 |
|
avalanche |
2 |
|
bidirectional switch |
2 |
|
brain emulation |
2 |
|
breakdown |
2 |
|
breakdown voltage |
2 |
|
breakdown voltage (bv) |
2 |
|
charge balance |
2 |
|
compact model |
2 |
|
device simulation |
2 |
|
esd |
2 |
|
failure analysis |
2 |
|
fin field-effect-transistor (finfet) |
2 |
|
finfet |
2 |
|
finfets |
2 |
|
ga$2$ o$3$ |
2 |
|
gallium oxide |
2 |
|
gan-hemt |
2 |
|
gate |
2 |
|
gate charges |
2 |
|
high electron mobility transistor (hemt) |
2 |
|
high temperature |
2 |
|
high voltage |
2 |
|
in-memory computing |
2 |
|
integrated circuits |
2 |
|
interface charges |
2 |
|
interface impurities |
2 |
|
jfet |
2 |
|
jte |
2 |
|
junction gate |
2 |
|
junction termination extension |
2 |
|
leakage current |
2 |
|
machine learning |
2 |
|
memory technology |
2 |
|
metal-organic chemical vapor deposition (mocvd) |
2 |
|
monolithic |
2 |
|
multi-channel |
2 |
|
mvsg model |
2 |
|
neuromorphic computing |
2 |
|
nickel oxide |
2 |
|
nio |
2 |
|
on-resistance |
2 |
|
p-gan |
2 |
|
p-gan resurf |
2 |
|
p-n diode |
2 |
|
p-n junction |
2 |
|
p-n junctions |
2 |
|
p-type gallium nitride (p-gan) |
2 |
|
power electronics |
2 |
|
power semiconductor device |
2 |
|
power semiconductor devices |
2 |
|
principal component analysis |
2 |
|
resurf |
2 |
|
reverse recovery |
2 |
|
schottky diode |
2 |
|
schottky-barrier diode |
2 |
|
self-align |
2 |
|
semiconductor device modeling |
2 |
|
sensory neurons |
2 |
|
short circuit |
2 |
|
soft switching |
2 |
|
spiking neural networks |
2 |
|
superjunction |
2 |
|
superjunction (sj) |
2 |
|
switching loss |
2 |
|
switching tests |
2 |
|
tcad simulation |
2 |
|
tcad simulations |
2 |
|
threshold voltage |
2 |
|
tri-gate |
2 |
|
ultra wide bandgap (uwbg) |
2 |
|
ultra-wide bandgap |
2 |
|
variation |
2 |
|
wide bandgap (wbg) |
2 |
|
wide-bandgap |
2 |
|
10 kv sic mosfet |
1 |
|
2d and 3d semiconductor devices |
1 |
|
2d electronics |
1 |
|
accelerated lifetime tests (alts) |
1 |
|
air stable doping |
1 |
|
algan |
1 |
|
aluminum gallium nitride |
1 |
|
aluminum gallium oxide |
1 |
|
aluminum nitride |
1 |
|
analog integrated circuit |
1 |
|
artificial neural networks |
1 |
|
autoencoder |
1 |
|
autoencoder (ae) |
1 |
|
avalanche breakdown |
1 |
|
avalanche capability |
1 |
|
back-barriers |
1 |
|
barrier height |
1 |
|
body diode |
1 |
|
buck converter |
1 |
|
buffer layer |
1 |
|
bulk gan substrate |
1 |
|
capacitance |
1 |
|
capacitances |
1 |
|
cascode |
1 |
|
channel mobility |
1 |
|
chemical vapor deposition |
1 |
|
chip size |
1 |
|
circuit platform test |
1 |
|
circuit test |
1 |
|
clamped inductive switching |
1 |
|
cmos |
1 |
|
cmos electronics |
1 |
|
co-design |
1 |
|
codesign |
1 |
|
complementary logic |
1 |
|
compound semiconductor |
1 |
|
computer-aided design flow |
1 |
|
conduction loss |
1 |
|
corner rounding |
1 |
|
coss loss |
1 |
|
coss losses |
1 |
|
cryogenic temperature |
1 |
|
dc |
1 |
|
dc-dc converter |
1 |
|
deep level transient spectroscopy |
1 |
|
defect identification |
1 |
|
defect states |
1 |
|
defects |
1 |
|
degenerate doping |
1 |
|
degradation |
1 |
|
degradation and failure behavior |
1 |
|
delayed feedback systems |
1 |
|
device modeling |
1 |
|
device processing |
1 |
|
diamond |
1 |
|
differential evolution |
1 |
|
diffusions |
1 |
|
digit recognition |
1 |
|
digital circuits |
1 |
|
diode |
1 |
|
diodes |
1 |
|
direct drive |
1 |
|
discrete insulated gate bipolar transistor (igbt) |
1 |
|
dopant activation |
1 |
|
doped multichannel |
1 |
|
doping |
1 |
|
drift region |
1 |
|
dynamic breakdown |
1 |
|
dynamic on-resistance |
1 |
|
dynamic r on |
1 |
|
dynamic rds(on) |
1 |
|
e-mode |
1 |
|
echo-state networks |
1 |
|
edge of chaos |
1 |
|
edge termination |
1 |
|
electrical characteristics |
1 |
|
electro-thermal co-design |
1 |
|
electron hopping |
1 |
|
electronic reservoirs |
1 |
|
electrothermal simulation |
1 |
|
enhancement |
1 |
|
failure mechanism |
1 |
|
failure mechanisms |
1 |
|
failure modes |
1 |
|
field plate |
1 |
|
figure of merits |
1 |
|
fin-channel field-effect transistor (fin-fet) |
1 |
|
fpga |
1 |
|
frequency |
1 |
|
fully-vertical |
1 |
|
ga o 2 3 |
1 |
|
gallium nitride (gan) |
1 |
|
gallium nitride (gan) high-electron mobility transistor (hemt) |
1 |
|
gallium nitrides |
1 |
|
gallium oxide (ga2o3) |
1 |
|
gan device |
1 |
|
gan hemt |
1 |
|
gan hemts |
1 |
|
gan high electron mobility transistors (hemts) |
1 |
|
gan high-electron-mobility transistor (hemt) |
1 |
|
gan jfet |
1 |
|
gan metal-oxide-semiconductor field-effect transistor (mosfet) |
1 |
|
gan on sapphire |
1 |
|
gan on si |
1 |
|
gan power device |
1 |
|
gan-on-gan |
1 |
|
gan-on-si |
1 |
|
gan-on-si vertical device |
1 |
|
gate control |
1 |
|
gate driver |
1 |
|
gate injection transistor |
1 |
|
gate oxide |
1 |
|
gate reliability |
1 |
|
gate spike |
1 |
|
git |
1 |
|
hard switching |
1 |
|
hard-switching |
1 |
|
hbox characteristics |
1 |
|
heating issues |
1 |
|
high breakdown voltage |
1 |
|
high electron mobility transistor |
1 |
|
high electron mobility transistors |
1 |
|
high forward current |
1 |
|
high frequency |
1 |
|
high-electron mobility transistors (hemts) |
1 |
|
high-electron-mobility transistor (hemt) |
1 |
|
high-electron-mobility transistors |
1 |
|
high-k field plate |
1 |
|
high-temperature operation |
1 |
|
hole |
1 |
|
htgb |
1 |
|
htol |
1 |
|
igzo |
1 |
|
image sensor |
1 |
|
impact ionization |
1 |
|
implantation |
1 |
|
inductive power switching |
1 |
|
inductive switching |
1 |
|
inverse design |
1 |
|
inverters |
1 |
|
ion implantation |
1 |
|
ion implantations |
1 |
|
jfets |
1 |
|
junction barrier schottky diode |
1 |
|
junction barrier schottky rectifiers |
1 |
|
junction capacitances |
1 |
|
junction field-effect transistor (jfet) |
1 |
|
junction-gate field-effect transistor (jfet) |
1 |
|
junctionless |
1 |
|
lc resonance |
1 |
|
leakage control |
1 |
|
leakage origin |
1 |
|
lifetime |
1 |
|
liquid state machines |
1 |
|
low on-resistance |
1 |
|
low power electronics |
1 |
|
machine learning (ml) |
1 |
|
magnesium |
1 |
|
medium voltage |
1 |
|
memristor |
1 |
|
metal oxide semiconductor high-electron mobility transistor (mos-hemt) |
1 |
|
metal-oxide-semiconductor field-effect transistors (mosfets) |
1 |
|
mg activation |
1 |
|
miller clamp |
1 |
|
misfet |
1 |
|
model |
1 |
|
modeling |
1 |
|
module thermal management and insulation |
1 |
|
molybdenum disulfide |
1 |
|
monolithic ic interface |
1 |
|
mos |
1 |
|
mos2 schottky diode |
1 |
|
mosfet |
1 |
|
mosfet; third quadrant conduction; body diode; mos; power converter |
1 |
|
mosfets |
1 |
|
nio/β-ga o heterojunction diodes 2 3 |
1 |
|
noise |
1 |
|
nonlinear resistive field grading |
1 |
|
normally-off |
1 |
|
on resistance |
1 |
|
optical control |
1 |
|
optical driver |
1 |
|
optical power |
1 |
|
output capacitance |
1 |
|
output capacitance loss |
1 |
|
output capacitance losses |
1 |
|
overvoltage |
1 |
|
p-channel |
1 |
|
p-diamond back-barrier (bb) |
1 |
|
p-diamond cap layer |
1 |
|
p-gan activation |
1 |
|
p-gan high-electron-mobility transistors (hemts) |
1 |
|
p-n diodes |
1 |
|
p-type diamond |
1 |
|
package |
1 |
|
packaging |
1 |
|
packaging of medium-voltage (mv) sic power module |
1 |
|
parasitic capacitor |
1 |
|
parasitic capacitors |
1 |
|
pareto front |
1 |
|
pattern recognition |
1 |
|
patterned sapphire substrate |
1 |
|
performance evaluation |
1 |
|
pgan |
1 |
|
photoluminescence |
1 |
|
platinum oxide |
1 |
|
polymer-nanoparticle composite |
1 |
|
power circuits |
1 |
|
power converter |
1 |
|
power device |
1 |
|
power device robustness |
1 |
|
power devices |
1 |
|
power diodes |
1 |
|
power electronic interrupter (pei) |
1 |
|
power electronics. |
1 |
|
power loss |
1 |
|
power management circuits |
1 |
|
power switching |
1 |
|
power transistor |
1 |
|
power transistors |
1 |
|
quasi-vertical |
1 |
|
radiation |
1 |
|
radio frequency |
1 |
|
raman |
1 |
|
rectifier |
1 |
|
reliability |
1 |
|
repetitive test |
1 |
|
reservoir computing |
1 |
|
resonant converter |
1 |
|
resonant converters |
1 |
|
reverse recovery time |
1 |
|
rf |
1 |
|
rf electronics |
1 |
|
ringing |
1 |
|
robustness |
1 |
|
ruggedness |
1 |
|
safe operating area |
1 |
|
schottky barrier diode |
1 |
|
schottky barrier diodes |
1 |
|
schottky contact |
1 |
|
schottky diodes |
1 |
|
selective substrate removal |
1 |
|
self-aligned phase junction |
1 |
|
semiconductor devices |
1 |
|
series-connected sic mosfets |
1 |
|
short-circuit |
1 |
|
short-circuit (sc) |
1 |
|
si activation |
1 |
|
sic mosfet |
1 |
|
siliccon carbide |
1 |
|
siliccon carbide, mosfet |
1 |
|
silicon carbide |
1 |
|
silicon carbide (sic) |
1 |
|
simulation |
1 |
|
smart feature |
1 |
|
soft-switching |
1 |
|
speech recognition |
1 |
|
spike |
1 |
|
split gate |
1 |
|
stability |
1 |
|
static induction transistor (sit) |
1 |
|
steady-state |
1 |
|
substrate |
1 |
|
superlattices |
1 |
|
surge |
1 |
|
surge current |
1 |
|
surge current interruption capability (scc) |
1 |
|
surge energy |
1 |
|
surge voltage |
1 |
|
switching |
1 |
|
switching charges |
1 |
|
switching frequency |
1 |
|
switching speed |
1 |
|
switching transients |
1 |
|
switching transients. |
1 |
|
tail current |
1 |
|
tcad |
1 |
|
technology computer-aided design (tcad) |
1 |
|
thermal management |
1 |
|
thermal performance |
1 |
|
thermal resistance |
1 |
|
third quadrant (3rd-quad) operation |
1 |
|
third quadrant conduction |
1 |
|
tin |
1 |
|
top-down |
1 |
|
transition metal dichalcogenides |
1 |
|
trapping |
1 |
|
traps |
1 |
|
turn-off loss |
1 |
|
ultra wide bandgap |
1 |
|
ultra-low turn-on voltage |
1 |
|
ultra-wide bandgap semiconductor |
1 |
|
ultrahigh-pressure annealings |
1 |
|
ultrawide bandgap |
1 |
|
ultrawide bandgap (uwbg) |
1 |
|
unclamped inductive switching |
1 |
|
unclamped inductive switching (uis) |
1 |
|
uwbg |
1 |
|
variability |
1 |
|
vertical breakdown mechanism |
1 |
|
vertical device |
1 |
|
vertical diodes |
1 |
|
vertical finfet |
1 |
|
vertical gan |
1 |
|
vertical gan fet |
1 |
|
vertical pn diodes |
1 |
|
vertical power rectifiers |
1 |
|
vertical schottky and p-n diodes |
1 |
|
vertical transistors |
1 |
|
voltage clamping circuit (vcc) |
1 |
|
voltage sharing |
1 |
|
wbg |
1 |
|
wet etch |
1 |
|
wide bandgap |
1 |
|
wide bandgap devices |
1 |
|
wide-bandgap semiconductors |
1 |
|
zero voltage switching (zvs) |
1 |
|
β-ga o 2 3 |
1 |
