|
machine learning |
3 |
|
neuromorphic computing |
3 |
|
2d materials |
2 |
|
artificial intelligence |
2 |
|
field-effect transistors |
2 |
|
hardware technologies |
2 |
|
integrated circuits |
2 |
|
metal dichalcogenides |
2 |
|
molybdenum disulfide (mos ) 2 |
2 |
|
monolayer |
2 |
|
monolayer tmd materials |
2 |
|
neural network models |
2 |
|
ring oscillator |
2 |
|
statistical study |
2 |
|
transfer |
2 |
|
transition metal dichalcogenides (tmd) |
2 |
|
two-dimensional (2d) electronics |
2 |
|
ultrascaled dielectric |
2 |
|
ultrashort channel length |
2 |
|
ws 2 |
2 |
|
1d |
1 |
|
1t-tantalum disulfide (1t-tas ) 2 |
1 |
|
2-d |
1 |
|
2-d electron gas |
1 |
|
2-d material |
1 |
|
2-d materials |
1 |
|
2d |
1 |
|
2d magnets |
1 |
|
2d material |
1 |
|
2deg |
1 |
|
300 mm si wafers |
1 |
|
ab initio simulation |
1 |
|
activation |
1 |
|
air-stable |
1 |
|
alinn |
1 |
|
aln |
1 |
|
ambipolar conduction |
1 |
|
ambipolar transport |
1 |
|
amorphous boron nitride |
1 |
|
analytical model |
1 |
|
anisotropic |
1 |
|
anisotropy |
1 |
|
artificial neurons |
1 |
|
artificial synapses |
1 |
|
artificial synaptic device |
1 |
|
atomic layer deposition |
1 |
|
attojoule energy dissipation |
1 |
|
band gaps |
1 |
|
band-to-band tunneling |
1 |
|
bandgap extraction |
1 |
|
bi-directional modulation |
1 |
|
bipolar transistor |
1 |
|
black arsenic |
1 |
|
black phosphorus |
1 |
|
black phosphorus (bp) |
1 |
|
boron nitride (bn) |
1 |
|
brain emulation |
1 |
|
breakdown |
1 |
|
breakdown voltage |
1 |
|
capacitance |
1 |
|
carbon nanotube |
1 |
|
carrier velocity |
1 |
|
chalcogenides |
1 |
|
charge carrier processes |
1 |
|
charge density wave |
1 |
|
charge imbalance |
1 |
|
charge imbalance (c.i.) |
1 |
|
charge-density-wave |
1 |
|
chemical vapor deposition |
1 |
|
chemical vapor deposition (cvd) graphene |
1 |
|
chemical vapor deposition graphene |
1 |
|
chlorination |
1 |
|
chromium tribromide |
1 |
|
circuits |
1 |
|
cmos |
1 |
|
cnt |
1 |
|
coaxially shielded |
1 |
|
compact bandpass filter |
1 |
|
compound semiconductor |
1 |
|
conductive bridge (cb) random access memory (cbram) |
1 |
|
contact resistance |
1 |
|
controllability |
1 |
|
controlled wetting of liquid metals |
1 |
|
convergence fiber drawing |
1 |
|
coverage |
1 |
|
crystallinity |
1 |
|
cu seed layer |
1 |
|
curie temperature |
1 |
|
current gain cutoff frequency (f ) t |
1 |
|
deformability |
1 |
|
degradation |
1 |
|
delay analysis |
1 |
|
detectivity |
1 |
|
device model |
1 |
|
device simulation |
1 |
|
di-chalcogenides |
1 |
|
dielectrics |
1 |
|
dual-gate transistors |
1 |
|
edge recognition |
1 |
|
electric field in free space |
1 |
|
electrical oscillations |
1 |
|
electrical oscillators |
1 |
|
electrical properties |
1 |
|
electronic device |
1 |
|
electronic devices |
1 |
|
esaki diodes |
1 |
|
femtojoules |
1 |
|
ferroelectric polarization |
1 |
|
field effect transistor |
1 |
|
field-effect transistor |
1 |
|
field-effect transistor (fet) |
1 |
|
fin field-effect-transistor (finfet) |
1 |
|
finfets |
1 |
|
flexible and transparent |
1 |
|
flexible electronics |
1 |
|
float-gating transistor |
1 |
|
frequency doublers |
1 |
|
frequency multiplier |
1 |
|
frequency multipliers |
1 |
|
full-wave rectifiers |
1 |
|
functionalization |
1 |
|
gain |
1 |
|
gallium nitride |
1 |
|
gallium oxide |
1 |
|
gan |
1 |
|
gate charges |
1 |
|
grapheme |
1 |
|
graphene |
1 |
|
graphene fet (gfet) |
1 |
|
graphene field-effect transistors |
1 |
|
graphene field-effect transistors (g-fets) |
1 |
|
graphene field-effect transistors (gfet) |
1 |
|
graphene field-effect transistors (gfets) |
1 |
|
hbn |
1 |
|
hemt |
1 |
|
hemts |
1 |
|
heterogeneity |
1 |
|
heterojunction |
1 |
|
heterostructure |
1 |
|
heterostructures |
1 |
|
hexagonal boron nitride (h-bn) |
1 |
|
hexagonal boron nitride (hbn) |
1 |
|
hexagonal rings |
1 |
|
high aspect ratio (har) through-silicon vias (tsvs) |
1 |
|
high density |
1 |
|
high electron mobility transistor (hemt) |
1 |
|
high electron mobility transistors(hemt) |
1 |
|
high gain |
1 |
|
high mobility electron transistor |
1 |
|
high temperature |
1 |
|
high voltage |
1 |
|
high-electron-mobility transistor (hemt) |
1 |
|
hot carrier dynamics |
1 |
|
in s 2 3 |
1 |
|
in vivo neural recording |
1 |
|
in-memory computing |
1 |
|
in-situ oxidation |
1 |
|
inaln |
1 |
|
inaln/gan |
1 |
|
inaln/gan heterojunctions |
1 |
|
infrared photodetectors |
1 |
|
infrared semiconductors |
1 |
|
infrared spectroscopy |
1 |
|
inorganic double helix |
1 |
|
insulator |
1 |
|
integrated circuit modeling |
1 |
|
integrated passive device (ipd) |
1 |
|
interface charges |
1 |
|
interface impurities |
1 |
|
ion exchange |
1 |
|
junction gate |
1 |
|
junction termination extension |
1 |
|
lateral heterojunction |
1 |
|
layered materials |
1 |
|
leakage current |
1 |
|
light trapping |
1 |
|
light-emitting diode (led) |
1 |
|
linear dichroism conversion |
1 |
|
logic gates |
1 |
|
logic transistor |
1 |
|
low-dimensional |
1 |
|
low-dimensional material |
1 |
|
low-symmetry |
1 |
|
mathematical model |
1 |
|
memory |
1 |
|
memory technology |
1 |
|
memristive device |
1 |
|
memristor |
1 |
|
memristors |
1 |
|
metal-organic chemical vapor deposition (mocvd) |
1 |
|
metallic surface layer |
1 |
|
metasurfaces |
1 |
|
microprocessing technology |
1 |
|
mid-infrared detector |
1 |
|
mid-ir photodetectors |
1 |
|
miniaturization |
1 |
|
mixed dielectric layer |
1 |
|
mixers |
1 |
|
mobility |
1 |
|
mocvd |
1 |
|
molecular sensing |
1 |
|
molybdenum disulfide |
1 |
|
molybdenum disulfide (mos ) 2 |
1 |
|
monochalcogenides |
1 |
|
monte carlo (mc) |
1 |
|
moore's law |
1 |
|
mosfet |
1 |
|
movpe |
1 |
|
multifunctional fiber-based neural probe |
1 |
|
multilevel-cell |
1 |
|
nano-optoelectrodes |
1 |
|
nanoelectronic |
1 |
|
nanoelectronics |
1 |
|
nanofingers |
1 |
|
nanoimprint lithography |
1 |
|
nanooptics |
1 |
|
nanophotonics |
1 |
|
nanoplasmonic sensing |
1 |
|
nanoribbons |
1 |
|
nanostructures photodetectors |
1 |
|
nanowire |
1 |
|
native oxide |
1 |
|
near-field |
1 |
|
near-field nanoscopy |
1 |
|
neuromorphic |
1 |
|
nickel oxide |
1 |
|
non-epitaxial crystalline compound semiconductors |
1 |
|
nonlinear access resistance |
1 |
|
nonvolatile memory |
1 |
|
numerical models |
1 |
|
on-resistance |
1 |
|
optoelectronic |
1 |
|
optoelectronic device |
1 |
|
optoelectronic synapses |
1 |
|
optoelectronics |
1 |
|
origami |
1 |
|
oxygen plasma |
1 |
|
p-gan |
1 |
|
p-n diode |
1 |
|
p-n junction |
1 |
|
passivation |
1 |
|
performance |
1 |
|
perovskite chalcogenides |
1 |
|
phase transformation |
1 |
|
phase transitions |
1 |
|
phase-controlled and far-from-equilibrium growth |
1 |
|
phonon shifts |
1 |
|
phosphorene |
1 |
|
photoconductive gain |
1 |
|
photodetector |
1 |
|
photodetectors |
1 |
|
photoelectric performances |
1 |
|
photogating effect |
1 |
|
photoluminescence |
1 |
|
photonic device |
1 |
|
photonic devices |
1 |
|
plasmon'phonon polariton |
1 |
|
polyimide (pi) liner |
1 |
|
power amplifiers |
1 |
|
power electronics |
1 |
|
power semiconductor device |
1 |
|
power semiconductor devices |
1 |
|
pressurization |
1 |
|
principal component analysis |
1 |
|
programmable synaptic plasticity |
1 |
|
quasi-1d |
1 |
|
quasi-1d chalcogenide |
1 |
|
radio frequency |
1 |
|
radio frequency (rf) |
1 |
|
raman |
1 |
|
raman spectroscopy |
1 |
|
reconfigurability |
1 |
|
reconfigurable |
1 |
|
reconfigurable devices |
1 |
|
redistribution layers (rdls) |
1 |
|
reram |
1 |
|
resistive switching |
1 |
|
resonant tunneling diode |
1 |
|
resurf |
1 |
|
reverse recovery |
1 |
|
rf applications |
1 |
|
rhenium diselenide |
1 |
|
s-parameters |
1 |
|
sapphire |
1 |
|
scattering |
1 |
|
schottky diode |
1 |
|
semiconductor device modeling |
1 |
|
semiconductors |
1 |
|
sensory neurons |
1 |
|
signal enhancement |
1 |
|
sj modeling |
1 |
|
slow light |
1 |
|
snip |
1 |
|
spiking neural networks |
1 |
|
spin–phonon coupling |
1 |
|
stochastic artificial neurons |
1 |
|
superior mechanical strength |
1 |
|
superjunction |
1 |
|
superjunction (sj) |
1 |
|
switching tests |
1 |
|
synapse |
1 |
|
synaptic plasticity |
1 |
|
ta-c films |
1 |
|
tcad simulation |
1 |
|
tellurene |
1 |
|
templated liquid-phase growth |
1 |
|
theory of transmission line |
1 |
|
thermal deposition |
1 |
|
thin-film transistors |
1 |
|
three-dimensional (3d) integration |
1 |
|
through-silicon-via (tsv) |
1 |
|
through-silicon-via（tsv) |
1 |
|
ti c t mxene 3 2 x |
1 |
|
tin selenide |
1 |
|
transconductance (g ) m |
1 |
|
transistor |
1 |
|
transistors |
1 |
|
transition metal dichalcogenide |
1 |
|
transition metal dichalcogenides |
1 |
|
transition metal dichalcogenides (tmdcs) |
1 |
|
transport |
1 |
|
tri-gate |
1 |
|
twisted bilayers |
1 |
|
two-/three-dimensional (2d/3d) heterojunction |
1 |
|
two-dimensional |
1 |
|
two-dimensional (2d) |
1 |
|
two-dimensional heterojunctions |
1 |
|
two-dimensional material |
1 |
|
two-dimensional materials |
1 |
|
ubiquitous electronics |
1 |
|
ultra-low energy consumption |
1 |
|
ultra-low power |
1 |
|
ultra-wide bandgap |
1 |
|
ultrafast electron microscopy |
1 |
|
ultralow k |
1 |
|
van der waals crystal |
1 |
|
van der waals heterostructure |
1 |
|
van-der-waals heterostructures |
1 |
|
variation |
1 |
|
virtual-source carrier injection velocity |
1 |
|
wide bandwidth |
1 |
|
young's modulus |
1 |
