|
zno |
10 |
|
defects |
8 |
|
physics |
7 |
|
defect |
6 |
|
dlts |
6 |
|
ion implantation |
6 |
|
nanorod |
6 |
|
photoluminescence |
6 |
|
physics engineering |
6 |
|
xps |
6 |
|
zinc oxide |
6 |
|
6h-sic |
5 |
|
pas |
5 |
|
pl |
5 |
|
positron annihilation spectroscopy |
5 |
|
schottky contact |
5 |
|
4h-silicon carbide |
4 |
|
72.20.ht |
4 |
|
78.70.bj |
4 |
|
79.90 |
4 |
|
contamination |
4 |
|
deep level transient spectroscopy |
4 |
|
excitation light |
4 |
|
field assisted moderator |
4 |
|
gan |
4 |
|
high quality |
4 |
|
ii-vi semiconductors |
4 |
|
non-linear optical properties |
4 |
|
ohmic contacts |
4 |
|
physics engineering chemistry |
4 |
|
polarization dependence |
4 |
|
positron mobility |
4 |
|
pulsed laser deposition |
4 |
|
rocking curves |
4 |
|
semi-insulating |
4 |
|
silicon carbide |
4 |
|
x ray photoelectron spectroscopy |
4 |
|
2-mev electron |
3 |
|
68.35.-p |
3 |
|
annealing |
3 |
|
arsenic |
3 |
|
atoms |
3 |
|
au/inp:fe interface |
3 |
|
breakdown |
3 |
|
buffer layer |
3 |
|
carbon foils |
3 |
|
channel electron multiplier |
3 |
|
chemical vapour deposition |
3 |
|
colorful emissions |
3 |
|
compensation defects |
3 |
|
condensed matter: electrical, magnetic and optical |
3 |
|
conversion efficiency |
3 |
|
crystal defects |
3 |
|
crystallography |
3 |
|
cu/sic |
3 |
|
deep level |
3 |
|
deep level spectroscopy |
3 |
|
dopant precursors |
3 |
|
doppler broadening spectroscopy |
3 |
|
e 1/e 2 |
3 |
|
edxs |
3 |
|
electrical and optical property |
3 |
|
electron-phonon coupling |
3 |
|
electrons |
3 |
|
ferroelectric response |
3 |
|
fluences |
3 |
|
growth conditions |
3 |
|
high-density polyethylene |
3 |
|
hole concentration |
3 |
|
hydrothermal treatments |
3 |
|
impurity concentration |
3 |
|
intrinsic defects |
3 |
|
irradiation |
3 |
|
isochronal annealing |
3 |
|
lec-grown inp |
3 |
|
low temperature |
3 |
|
ltpl |
3 |
|
martensite stabilisation |
3 |
|
martensitic transformation |
3 |
|
maximum entropy |
3 |
|
melt |
3 |
|
metastability |
3 |
|
monte carlo |
3 |
|
monte carlo methods |
3 |
|
morphology |
3 |
|
n-nanorods |
3 |
|
nanostructures |
3 |
|
native defect |
3 |
|
nitrate precursors |
3 |
|
nitrogen |
3 |
|
optical cross-section |
3 |
|
oxides |
3 |
|
phase transition |
3 |
|
photoluminsescence |
3 |
|
polarity control |
3 |
|
positron annihilation |
3 |
|
positron beam |
3 |
|
positron diffusion length |
3 |
|
positron emission |
3 |
|
positron energy |
3 |
|
positron lifetime |
3 |
|
positron lifetime spectroscopy |
3 |
|
positron lifetime technique |
3 |
|
positron moderation |
3 |
|
positron trapping |
3 |
|
positronium |
3 |
|
post-quench ageing |
3 |
|
radio waves |
3 |
|
raman spectroscopy |
3 |
|
scanning electron microscopy |
3 |
|
second harmonic generation |
3 |
|
secondary electrons |
3 |
|
secondary ion mass spectra |
3 |
|
shape memory alloy |
3 |
|
si-gaas |
3 |
|
sic |
3 |
|
slow positron re-emission |
3 |
|
spectrum analysis |
3 |
|
surface etching |
3 |
|
trapped electrons |
3 |
|
tungsten mesh |
3 |
|
vacancy sensing |
3 |
|
vepfit |
3 |
|
x-ray photoelectron spectra |
3 |
|
γ-in2se3 |
3 |
|
acceptor complex |
2 |
|
alphabet lines |
2 |
|
annealing temperatures |
2 |
|
anodes |
2 |
|
band edge |
2 |
|
brownian oscillators |
2 |
|
cathodoluminescence |
2 |
|
deep level trap |
2 |
|
deposition conditions |
2 |
|
device performance |
2 |
|
dielectric properties |
2 |
|
electron irradiation |
2 |
|
electron phonon couplings |
2 |
|
electronic levels |
2 |
|
emission bands |
2 |
|
emission spectrums |
2 |
|
energy loss straggling |
2 |
|
er-doped zno |
2 |
|
ferroelectric |
2 |
|
formation process |
2 |
|
gallium arsenide semiconductors. |
2 |
|
gallium arsenide. |
2 |
|
gallium nitride |
2 |
|
gas sensing |
2 |
|
growth method |
2 |
|
hall effect measurement |
2 |
|
hydrogen impurity |
2 |
|
hydrothermal growth |
2 |
|
indium phosphide. |
2 |
|
indium triselenide |
2 |
|
intra-4f-transition emission |
2 |
|
layered semiconductors |
2 |
|
low substrate temperature |
2 |
|
melt-grown |
2 |
|
n-type conductivity |
2 |
|
negative thermal quenching |
2 |
|
opto-electronics |
2 |
|
oxygen implantation |
2 |
|
p type zno |
2 |
|
p-type doping |
2 |
|
permittivity |
2 |
|
positron annihilation. |
2 |
|
positron induced secondary electron emission |
2 |
|
positrons |
2 |
|
secondary ion mass spectroscopy |
2 |
|
sickafus law |
2 |
|
silicon compounds |
2 |
|
stopping power |
2 |
|
sub-bandgap |
2 |
|
thin film |
2 |
|
titanates |
2 |
|
transparent conducting oxide |
2 |
|
v2o5 |
2 |
|
x-ray diffraction |
2 |
|
yellow luminescence |
2 |
|
zn-vacancy |
2 |
|
3d flower-like |
1 |
|
6h silicon carbide |
1 |
|
a. a-zno |
1 |
|
a. c-p-mbe |
1 |
|
a. znmgo |
1 |
|
absorbers |
1 |
|
al/gasb |
1 |
|
all-in-one batteries |
1 |
|
alloying |
1 |
|
anode |
1 |
|
anode material |
1 |
|
anode materials |
1 |
|
aqueous zinc-ion batteries |
1 |
|
aqueous zn-ion batteries |
1 |
|
arsenic doped |
1 |
|
as-implantation |
1 |
|
asymmetric electrodes |
1 |
|
ball-milling |
1 |
|
band offset |
1 |
|
band structure |
1 |
|
batteries |
1 |
|
biowaste |
1 |
|
bismuth |
1 |
|
capacitance-voltage spectra |
1 |
|
carbon vacancy |
1 |
|
carrier concentration |
1 |
|
cathode materials |
1 |
|
cevo4 |
1 |
|
cnts |
1 |
|
co-precipitation |
1 |
|
cobalt |
1 |
|
compensation |
1 |
|
crosslinked hybrid |
1 |
|
crystal growth from melt |
1 |
|
crystal microstructure |
1 |
|
cu doped zno |
1 |
|
cu-doped zno |
1 |
|
cyclic stability |
1 |
|
deep level defect |
1 |
|
deep levels |
1 |
|
diluted mgnetic semiconductor |
1 |
|
divacancy |
1 |
|
doppler broadening |
1 |
|
electrical conductivity |
1 |
|
electromagnetic properties |
1 |
|
electron beam cured (ebc) coating |
1 |
|
emi shielding |
1 |
|
epoxy-acrylates resin |
1 |
|
erbium |
1 |
|
erbium compounds |
1 |
|
extrinsic doping |
1 |
|
ferrites |
1 |
|
ferromagnetism |
1 |
|
first principle calculation |
1 |
|
flexible electrode |
1 |
|
flexible electrodes |
1 |
|
flexible film |
1 |
|
free volume |
1 |
|
gallium oxide |
1 |
|
gas sensor |
1 |
|
green luminescence |
1 |
|
hard carbon |
1 |
|
hdpe(cb) |
1 |
|
hetero-junction |
1 |
|
heterogeneous moo3/moo2 |
1 |
|
high voltage bipolar devices |
1 |
|
high-low temperature |
1 |
|
hybrid cation electrolyte |
1 |
|
hydrogen |
1 |
|
in situ condensation |
1 |
|
in-xrd |
1 |
|
inert zinc hydroxide |
1 |
|
interface |
1 |
|
interfaces (materials) |
1 |
|
interstitials |
1 |
|
large interlayer distances |
1 |
|
leakage current |
1 |
|
li-ion batteries |
1 |
|
light absorption |
1 |
|
lithium |
1 |
|
lithium ion batteries |
1 |
|
lithium storage |
1 |
|
lithium-/sodium-ion batteries |
1 |
|
lithium-ion batteries |
1 |
|
lithium-ion battery |
1 |
|
lithium/sodium storage |
1 |
|
long-term cycle |
1 |
|
magnesium oxide |
1 |
|
magnetic properties |
1 |
|
magnetization |
1 |
|
mechanical ball-milling |
1 |
|
mesoporous materials |
1 |
|
mesoporous structure |
1 |
|
mgzno |
1 |
|
micro-emulsion |
1 |
|
microcavities |
1 |
|
mixed v4+/v5+ valence |
1 |
|
mn-doped k0.23v2o5 |
1 |
|
monovacancy |
1 |
|
monte carlo simulation |
1 |
|
morphology evolution |
1 |
|
mosaic structures |
1 |
|
mose2 |
1 |
|
multiple quantum wells |
1 |
|
mössbauer spectroscopy |
1 |
|
n-doped carbon |
1 |
|
n-n heterojunction |
1 |
|
na0.56v2o5 nanobelt |
1 |
|
nanoparticles |
1 |
|
nanorods |
1 |
|
nanotubes |
1 |
|
nano‑silicon electrode |
1 |
|
native point defects |
1 |
|
near band edge emission |
1 |
|
nickel phosphide |
1 |
|
nico2o4@tio2 |
1 |
|
nise |
1 |
|
nitrogen doping |
1 |
|
o-polar |
1 |
|
o-ps lifetime |
1 |
|
ohmic contact |
1 |
|
organic pan/thf pillars |
1 |
|
oxygen deficiency |
1 |
|
oxygen vacancies |
1 |
|
pacs/topics: ferromagnetism |
1 |
|
phosphorous |
1 |
|
plant oils |
1 |
|
polarity |
1 |
|
pollensodium ion batteries |
1 |
|
polyimide |
1 |
|
porous network |
1 |
|
positive temperature coefficient (ptc) |
1 |
|
positron |
1 |
|
potassium ion batteries |
1 |
|
potassium-ion batteries |
1 |
|
potassium/sodium ion batteries |
1 |
|
power factor |
1 |
|
pseudocapacitance |
1 |
|
quasi-solid-state |
1 |
|
quasi-solid-state devices |
1 |
|
raman additional modes |
1 |
|
rapid electron transport |
1 |
|
red phosphorus |
1 |
|
remote plasma |
1 |
|
rf magnetron sputtering |
1 |
|
rice ball-like |
1 |
|
sb-doped zno |
1 |
|
sbpo4 |
1 |
|
sbzn defect |
1 |
|
schottky barrier height |
1 |
|
schottky diode |
1 |
|
secondary ion mass spectrometry |
1 |
|
secondary phase |
1 |
|
self-powered |
1 |
|
self-trapped holes |
1 |
|
semiconductor |
1 |
|
semiconductor lasers |
1 |
|
shallow acceptor |
1 |
|
silane coupling agents |
1 |
|
silicon carbide (sic) |
1 |
|
siox@c anode |
1 |
|
slow positron beam |
1 |
|
sodium ion batteries |
1 |
|
soybean oil |
1 |
|
squid |
1 |
|
supercapacitors |
1 |
|
superior cyclic durability |
1 |
|
the li+ diffusion coefficients |
1 |
|
thermodynamic equilibrium |
1 |
|
thermoelectrics |
1 |
|
thin films |
1 |
|
transparent conductive oxides |
1 |
|
trapping |
1 |
|
ultra-long stability |
1 |
|
ultraviolet photoelectron spectroscopy |
1 |
|
uv pd |
1 |
|
v2ctx-mxene |
1 |
|
v5o12·6h2o/zn(oh)2·0.5h2o hybrids |
1 |
|
vacancy |
1 |
|
vacancy cluster |
1 |
|
vacancy clusters |
1 |
|
vo2/mxene hybrid films |
1 |
|
white emission led |
1 |
|
wide temperature |
1 |
|
zinc ion batteries |
1 |
|
zn-polar |
1 |
|
zn-vacancy related defects |
1 |
|
zn2+/na+ storage |
1 |
|
zn2geo4/carbon nanotubes |
1 |
|
zn3v3o8 |
1 |
|
zn3v3o8 hollow spheres |
1 |
|
znco2o4 |
1 |
|
znmn2o4 |
1 |
|
zns |
1 |
