Co-Authors
AuthorsNo. of Publications
beling, cd 87
fung, s 85
anwand, w 51
brauer, g 41
skorupa, w 33
chen, xd 26
weng, hm 22
gong, m 21
su, s 20
wagner, a 17
wang, z 14
djurišić, ab 13
younas, m 12
chen, x 11
fung, shy 11
ru, q 11
shan, yy 11
su, sc 11
cheung, ck 10
xu, sj 10
gu, q 9
cheah, kw 8
lui, mk 8
luo, c 8
yang, b 8
deng, ah 7
gu, ql 7
hsu, yf 7
huang, y 7
lam, ch 7
lee, tc 7
au, hl 6
azad, f 6
chan, wk 6
djurisic, a 6
ge, wk 6
ng, amc 6
ong, hc 6
panda, bk 6
wang, hy 6
wang, jn 6
zhu, cy 6
hang, ds 5
li, kf 5
liu, p 5
lu, lw 5
tam, kh 5
xu, s 5
zhang, jd 5
zhong, zq 5
chen, f 4
chen, tp 4
cheng, sk 4
dai, x 4
grambole, d 4
han, rd 4
hou, x 4
hou, xh 4
hu, yf 4
kuriplach, j 4
li, s 4
liu, y 4
lortz, r 4
mui, wk 4
wong, ks 4
xie, z 4
ye, bj 4
zhao, lz 4
zhao, yw 4
zhou, xy 4
zhu, c 4
zhu, h 4
chen, yn 3
cheng, s 3
dai, xm 3
fan, j 3
fan, jc 3
fong, pwk 3
guo, q 3
han, r 3
hao, jh 3
ho, lp 3
kuznetsov, a 3
lu, l 3
lu, xh 3
lu, ym 3
ma, sk 3
ng, ck 3
reuther, h 3
schmidt, m 3
shi, z 3
sun, s 3
to, ck 3
ton-that, c 3
wang, b 3
wang, o 3
wang, rx 3
weng, h 3
xu, j 3
yan, h 3
yang, cl 3
zhang, p 3
zhong, yc 3
akhtar, mj 2
azeem, w 2
betterling, m 2
butterling, m 2
cai, lh 2
chen, xy 2
cheng, cc 2
chu, pk 2
chung, cy 2
ding, l 2
djurisic, ab 2
ellguth, m 2
fan, ym 2
fang, f 2
fleischer, s 2
fu, rky 2
gao, y 2
gao, yq 2
grundmann, m 2
he, m 2
huang, ap 2
hui, cw 2
hui, ip 2
huimin, w 2
khan, hn 2
klimm, d 2
lam, cwh 2
lam, tw 2
leung, cw 2
leung, yh 2
liang, hw 2
liao, c 2
lui, hf 2
luo, j 2
luo, jm 2
luo, yl 2
maqsood, a 2
mehmood, m 2
mei, yf 2
nadeem, m 2
nahid, f 2
ning, j 2
ning, jq 2
phillips, mr 2
pickenhain, r 2
rahman, ma 2
rasheed, ma 2
reddy, cv 2
schulz, d 2
shan, cx 2
shek, yf 2
shih, k 2
siu, gg 2
so, ck 2
su, cq 2
surya, c 2
teichert, c 2
v wenckstern, h 2
wang, rs 2
wang, sp 2
wang, yy 2
wei, l 2
wu, dx 2
xi, yy 2
yu, sf 2
zheng, c 2
ali, f 1
ali, sm 1
anwand, dpw 1
arshad, m 1
auret, fd 1
azarov, a 1
beinik, i 1
beling, cd 1
beynik, i 1
brauer, hg 1
cai, x 1
chan, wk 1
chang, sj 1
chawanda, a 1
che, cm 1
chen, aq 1
chen, fm 1
chen, h-y 1
cheng, ck 1
cheung, sh 1
chi, gc 1
chin, hy 1
ching, hm 1
cizmar, e 1
cowan, te 1
czekalla, c 1
dai, xq 1
das, agm 1
deng, x 1
desheng, h 1
diale, m 1
ding, g 1
ding, gw 1
djurii, ab 1
djurisić, ab 1
djurišic, ab 1
djurišič, ab 1
du, gt 1
du, jf 1
egger, w 1
fan, sw 1
fang, yx 1
feng, qj 1
fung, h 1
fung, mk 1
fung, shy 1
gao, gy 1
gao, p 1
ge, w 1
grenzer, j 1
grynszpan, ri 1
hang, hs 1
he, ht 1
he, mq 1
helm, m 1
henkel, t 1
hu, y 1
hui, yp 1
huynh, tt 1
iek, j 1
janse van rensburg, pj 1
jia, sj 1
karsthof, r 1
klemm, v 1
kobayashi, n 1
kwan, py 1
kwok, wm 1
kwong, c 1
lang, j 1
lee, ml 1
lee, tc 1
li, bk 1
li, cj 1
liao, l-s 1
lin, j 1
ling, cd 1
liu, js 1
liu, jy 1
liu, yd 1
lu, yj 1
lui, mkp 1
luo, cq 1
lynn, kg 1
ma, cg 1
mei, t 1
mei, yy 1
meyer, we 1
mtangi, w 1
naeem-ur-rehman, kh 1
naik, ps 1
nel, jm 1
niu, b 1
pak, cm 1
pan, dz 1
panda, s 1
phillips, dl 1
phillips, m 1
pramanik, c 1
prochzka, i 1
procházka, i 1
rafaja, d 1
rizwan, r 1
saha, h 1
sarkar, ck 1
schreiber, g 1
shen, dz 1
shen, jy 1
shen, rs 1
sheu, jk 1
shi, sl 1
shi, y-l 1
sperr, p 1
su, c 1
su, m 1
su, s-c 1
sun, nf 1
sun, tn 1
sun, x-y 1
surya, cc 1
tam, hl 1
tam, hw 1
tanoue, h 1
tao, pc 1
tsia, jm 1
w ding, g 1
wang, j 1
wang, l 1
wang, s-p 1
wang, x 1
wang, xh 1
wang, xy 1
wang, zl 1
wei, zf 1
wu, hs 1
wu, yy 1
xi, y 1
xia, xc 1
xie, mh 1
xie, x-h 1
xing, sa 1
xu, c 1
xu, s 1
yan, ss 1
yang, h 1
yang, hy 1
yang, yq 1
yang, z 1
yao, d-s 1
ye, zr 1
yie, bj 1
yu, tf 1
yu, z 1
zakria, m 1
zeng, h 1
zhang, h 1
zhang, hy 1
zhang, j 1
zhang, lx 1
zhang, wf 1
zhang, xf 1
zhang, zc 1
zhang, zd 1
zhao, d 1
zhao, l 1
zheng, cc 1
zheng, p 1
zhi, cy 1
zhong, y 1
zhong, z 1
zhou, hy 1
zhou, sq 1
zhou, t 1
zhou, tj 1
zhu, dl 1
zhu, j 1
zou, l 1
zviagin, s 1
čížek, j 1
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Keywords in Publications
keywordsNo. of Authors
zno 8
defects 7
physics 7
dlts 6
physics engineering 6
6h-sic 5
nanorod 5
pas 5
pl 5
schottky contact 5
xps 5
zinc oxide 5
4h-silicon carbide 4
72.20.ht 4
78.70.bj 4
79.90 4
contamination 4
deep level transient spectroscopy 4
excitation light 4
field assisted moderator 4
high quality 4
ii-vi semiconductors 4
non-linear optical properties 4
ohmic contacts 4
photoluminescence 4
physics engineering chemistry 4
polarization dependence 4
positron annihilation spectroscopy 4
positron mobility 4
rocking curves 4
semi-insulating 4
silicon carbide 4
x ray photoelectron spectroscopy 4
2-mev electron 3
68.35.-p 3
annealing 3
arsenic 3
atoms 3
au/inp:fe interface 3
breakdown 3
buffer layer 3
carbon foils 3
channel electron multiplier 3
compensation defects 3
condensed matter: electrical, magnetic and optical 3
conversion efficiency 3
crystal defects 3
crystallography 3
cu/sic 3
deep level 3
deep level spectroscopy 3
defect 3
dopant precursors 3
doppler broadening spectroscopy 3
e 1/e 2 3
edxs 3
electrical and optical property 3
electrons 3
fluences 3
gan 3
growth conditions 3
high-density polyethylene 3
hole concentration 3
hydrothermal treatments 3
impurity concentration 3
ion implantation 3
irradiation 3
isochronal annealing 3
lec-grown inp 3
low temperature 3
ltpl 3
martensite stabilisation 3
martensitic transformation 3
maximum entropy 3
melt 3
metastability 3
monte carlo 3
monte carlo methods 3
morphology 3
n-nanorods 3
nanostructures 3
native defect 3
nitrate precursors 3
nitrogen 3
optical cross-section 3
oxides 3
phase transition 3
photoluminsescence 3
polarity control 3
positron annihilation 3
positron beam 3
positron diffusion length 3
positron emission 3
positron energy 3
positron lifetime 3
positron lifetime spectroscopy 3
positron lifetime technique 3
positron moderation 3
positron trapping 3
positronium 3
post-quench ageing 3
pulsed laser deposition 3
radio waves 3
scanning electron microscopy 3
secondary electrons 3
secondary ion mass spectra 3
shape memory alloy 3
si-gaas 3
sic 3
slow positron re-emission 3
spectrum analysis 3
surface etching 3
trapped electrons 3
tungsten mesh 3
vacancy sensing 3
vepfit 3
x-ray photoelectron spectra 3
acceptor complex 2
alphabet lines 2
annealing temperatures 2
band edge 2
brownian oscillators 2
deep level trap 2
deposition conditions 2
device performance 2
electron irradiation 2
electron phonon couplings 2
electronic levels 2
emission bands 2
emission spectrums 2
energy loss straggling 2
formation process 2
gallium arsenide semiconductors. 2
gallium arsenide. 2
growth method 2
hydrogen impurity 2
hydrothermal growth 2
indium phosphide. 2
intrinsic defects 2
low substrate temperature 2
melt-grown 2
n-type conductivity 2
opto-electronics 2
oxygen implantation 2
p type zno 2
p-type doping 2
positron annihilation. 2
positron induced secondary electron emission 2
positrons 2
secondary ion mass spectroscopy 2
sickafus law 2
silicon compounds 2
stopping power 2
3d flower-like 1
6h silicon carbide 1
a. a-zno 1
a. c-p-mbe 1
a. znmgo 1
al/gasb 1
anode 1
anode material 1
anode materials 1
anodes 1
arsenic doped 1
as-implantation 1
asymmetric electrodes 1
ball-milling 1
capacitance-voltage spectra 1
carrier concentration 1
cathodoluminescence 1
compensation 1
crosslinked hybrid 1
crystal growth from melt 1
crystal microstructure 1
deep level defect 1
deep levels 1
doppler broadening 1
electron beam cured (ebc) coating 1
epoxy-acrylates resin 1
erbium 1
erbium compounds 1
free volume 1
hdpe(cb) 1
high-low temperature 1
inert zinc hydroxide 1
interface 1
interfaces (materials) 1
interstitials 1
large interlayer distances 1
light absorption 1
lithium ion batteries 1
lithium-/sodium-ion batteries 1
lithium-ion battery 1
mechanical ball-milling 1
mgzno 1
micro-emulsion 1
monte carlo simulation 1
mosaic structures 1
multiple quantum wells 1
nano‑silicon electrode 1
nise 1
nitrogen doping 1
o-ps lifetime 1
plant oils 1
pollensodium ion batteries 1
porous network 1
positive temperature coefficient (ptc) 1
positron 1
potassium-ion batteries 1
rapid electron transport 1
red phosphorus 1
remote plasma 1
secondary ion mass spectrometry 1
self-powered 1
semiconductor 1
shallow acceptor 1
slow positron beam 1
soybean oil 1
supercapacitors 1
superior cyclic durability 1
trapping 1
uv pd 1
v5o12·6h2o/zn(oh)2·0.5h2o hybrids 1
vacancy 1
wide temperature 1
zn-vacancy 1
zn2+/na+ storage 1
zn2geo4/carbon nanotubes 1
zn3v3o8 1
znco2o4 1
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Disciplines in Grants
DisciplinesNo. of Investigators
physics 5
physics,materials sciences 3
others - physical sciences 1
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