|
b1. nanomaterials |
5 |
|
b1. zinc compounds |
5 |
|
compressive strain |
3 |
|
epilayers grown |
3 |
|
low temperature photoluminescence |
3 |
|
peak position |
3 |
|
physics engineering |
3 |
|
r-sapphire |
3 |
|
thin film |
3 |
|
gas sensing |
2 |
|
heterojunction |
2 |
|
magnetic properties |
2 |
|
oxygen vacancy |
2 |
|
v2o5 |
2 |
|
(mg, x)b2 superconductor with x = li, al, na, ca |
1 |
|
2d material |
1 |
|
2d materials |
1 |
|
2d tellurium |
1 |
|
2deg |
1 |
|
a. manganite film |
1 |
|
a. superconductors |
1 |
|
a. surfaces and interfaces |
1 |
|
a. thin films |
1 |
|
a1. atomic force microscopy (afm) |
1 |
|
a1. crystal structure |
1 |
|
a1. defects |
1 |
|
a1. ordering nanostructure |
1 |
|
a1. surface microstructures |
1 |
|
a1. surface structure |
1 |
|
a1. transmission electron microscopy |
1 |
|
a1. x-ray diffraction |
1 |
|
a3. epitaxial growth |
1 |
|
a3. mg2sio4 thin film |
1 |
|
a3. physical vapor deposition processes |
1 |
|
abnormal electroresistance |
1 |
|
abnormal grain growth |
1 |
|
ac susceptibility |
1 |
|
activation energy |
1 |
|
adherent coatings |
1 |
|
adhesion |
1 |
|
afm |
1 |
|
aging effect |
1 |
|
anisotropic conduction |
1 |
|
anisotropic superconductors |
1 |
|
annealing temperature |
1 |
|
antiferromagnetic insulators |
1 |
|
applied electric field |
1 |
|
artificial synapses |
1 |
|
asymmetric characteristic |
1 |
|
asymmetric conduction |
1 |
|
asymmetric ratio |
1 |
|
atomic force microscopy |
1 |
|
b-mg-x ternary |
1 |
|
b. epitaxial growth |
1 |
|
b. sputtering |
1 |
|
b1. cuprates |
1 |
|
b1. la2/3ca1/3mno3 films |
1 |
|
b1. perovskites |
1 |
|
b2. dielectric materials |
1 |
|
b2. superconducting materials |
1 |
|
ba-site |
1 |
|
band gap |
1 |
|
barium compounds |
1 |
|
barrier |
1 |
|
barrier height |
1 |
|
barrier heights |
1 |
|
bfco |
1 |
|
bi-layers |
1 |
|
biaxial compressive strain |
1 |
|
bifeo3 ceramic |
1 |
|
bifeo3 nanocrystals |
1 |
|
bimodal structure |
1 |
|
boron carbon nitride |
1 |
|
buffer layer |
1 |
|
buffer material |
1 |
|
bulk modulus |
1 |
|
c. metastable states |
1 |
|
c. strain |
1 |
|
calcium |
1 |
|
carbon film |
1 |
|
carbon film coating |
1 |
|
carbon nanotubes (cnts) |
1 |
|
carbon nitride |
1 |
|
carrier concentration |
1 |
|
carrier mobility |
1 |
|
carrier spins |
1 |
|
cation disorder |
1 |
|
cdznte |
1 |
|
characterization |
1 |
|
chemical solution deposition |
1 |
|
cmos inverter |
1 |
|
cmr |
1 |
|
co doped amorphous carbon films |
1 |
|
cofeb thin film |
1 |
|
colossal electroresistance |
1 |
|
colossal magnetoresistance |
1 |
|
colossal magnetoresistance manganites |
1 |
|
composite |
1 |
|
condensed matter: electrical, magnetic and optical |
1 |
|
conduction mechanism |
1 |
|
conductive filaments |
1 |
|
converse piezoelectric effects |
1 |
|
coupling |
1 |
|
covalent organic framework |
1 |
|
critical current density |
1 |
|
critical phenomena |
1 |
|
critical value |
1 |
|
crystal growth |
1 |
|
current-induced electroresistance |
1 |
|
current-voltage characteristic |
1 |
|
d. electrical properties |
1 |
|
d. electronic transport |
1 |
|
d. ferroelectric polarization switching |
1 |
|
damping |
1 |
|
dc-bias current |
1 |
|
defect structures |
1 |
|
dielectric |
1 |
|
dielectric devices |
1 |
|
dielectric thin film |
1 |
|
diffusion voltage |
1 |
|
diode |
1 |
|
domain switching |
1 |
|
doping |
1 |
|
e-commerce platform |
1 |
|
effects of leakage |
1 |
|
electric field effects |
1 |
|
electric insulators |
1 |
|
electric space charge |
1 |
|
electric-field control |
1 |
|
electrical conductivity |
1 |
|
electrical impedance |
1 |
|
electrical properties |
1 |
|
electrical reliability |
1 |
|
electrocaloric effect |
1 |
|
electrocatalyst |
1 |
|
electrochemistry |
1 |
|
electron transport properties |
1 |
|
electron-doped |
1 |
|
electroresistance |
1 |
|
electroresistance effects |
1 |
|
emergent phenomenon |
1 |
|
energy storage |
1 |
|
engineering |
1 |
|
engineering mechanics and materials physics |
1 |
|
enhanced photoconductivity |
1 |
|
epitaxial films |
1 |
|
epitaxial growth |
1 |
|
epitaxial thin films |
1 |
|
epitaxially grown |
1 |
|
epitaxy |
1 |
|
exchange bias |
1 |
|
fe2+ doping |
1 |
|
feature fusion |
1 |
|
ferroelectric |
1 |
|
ferroelectric hysteresis loop |
1 |
|
ferroelectric polarization |
1 |
|
ferroelectric poling |
1 |
|
ferroelectric properties |
1 |
|
ferromagnetic metal |
1 |
|
ferromagnetism |
1 |
|
field effects |
1 |
|
field modulation |
1 |
|
field-effect structure |
1 |
|
film thickness (膜厚) |
1 |
|
first-order phase transition |
1 |
|
flexible electronics |
1 |
|
flexible multiferroic heterostructures |
1 |
|
flexible substrate |
1 |
|
flux pinning |
1 |
|
forward currents |
1 |
|
frenkel-poole emission |
1 |
|
gaas |
1 |
|
graded barrier layer |
1 |
|
grain boundary |
1 |
|
grain-size distribution |
1 |
|
graphene oxide |
1 |
|
grazing incidence x-ray diffraction |
1 |
|
grazing incidence x-ray reflectivity |
1 |
|
hall effect |
1 |
|
heat of formation |
1 |
|
heteroepitaxial |
1 |
|
heteroepitaxy |
1 |
|
heterojunction structure |
1 |
|
heterojunctions |
1 |
|
heterostructure |
1 |
|
heterostructures |
1 |
|
hexagonal ε-fe3n |
1 |
|
high density |
1 |
|
high effective energy barrier |
1 |
|
high electrical property |
1 |
|
high resistivity |
1 |
|
high tc josephson junction |
1 |
|
high tc superconductor |
1 |
|
high temperature superconductors |
1 |
|
high-tc superconductors |
1 |
|
hotoconductivity |
1 |
|
hrem |
1 |
|
human action recognition |
1 |
|
hybrid heterojunction |
1 |
|
hydrothermal method |
1 |
|
i - v curve |
1 |
|
improved stability |
1 |
|
in-plane growth orientation |
1 |
|
in-plane lattice parameter |
1 |
|
in-situ |
1 |
|
inhomogeneities |
1 |
|
interdiffusion |
1 |
|
interface |
1 |
|
interface exchange coupling interaction |
1 |
|
interface structure |
1 |
|
interfaces |
1 |
|
interfacial effects |
1 |
|
interfacial roughness |
1 |
|
intermediate layer |
1 |
|
ion size |
1 |
|
itinerant electron metamagnetism |
1 |
|
josephson effect |
1 |
|
josephson junction |
1 |
|
josephson junctions |
1 |
|
ktao3 |
1 |
|
la 0.8ca0.2mno3 |
1 |
|
la0.7ca0.3mno3 film |
1 |
|
la0.9ba0.1mno3 thin film |
1 |
|
la0.9hf0.1mno3 |
1 |
|
la0.9mno3+δ |
1 |
|
la0.9sr0.1mno3 |
1 |
|
la2/3ca1/3mno3 |
1 |
|
la2/3ca1/3mno3 thin films |
1 |
|
laalo3/srtio3 |
1 |
|
lanthanum |
1 |
|
lanthanum alloys |
1 |
|
lanthanum calcium manganese oxide |
1 |
|
laser deposition |
1 |
|
lattice mismatch |
1 |
|
lattice strain |
1 |
|
lcmo/pmn-pt heterostructures |
1 |
|
lead-free bnt/lcmo nano-multilayers |
1 |
|
loading force |
1 |
|
long axial bond |
1 |
|
low temperatures |
1 |
|
luminescence |
1 |
|
magnetic anisotropy |
1 |
|
magnetic domains |
1 |
|
magnetic doping |
1 |
|
magnetic films |
1 |
|
magnetic materials |
1 |
|
magnetic nanodevices |
1 |
|
magnetic phase boundaries |
1 |
|
magnetic response |
1 |
|
magnetic tunability |
1 |
|
magnetization |
1 |
|
magnetocaloric effect |
1 |
|
magnetoelectric coupling, electric field control of magnetization |
1 |
|
magnetoresistance |
1 |
|
manganese oxide |
1 |
|
manganite |
1 |
|
manganite (錳氧化物) |
1 |
|
manganite thin films |
1 |
|
manganites |
1 |
|
materials processing |
1 |
|
mechanical and acoustical properties; adhesion |
1 |
|
meta-stable state |
1 |
|
metal nitride |
1 |
|
metal-insulator phase transition |
1 |
|
metamaterials |
1 |
|
micro-hardness |
1 |
|
microelectronics |
1 |
|
microfluidics |
1 |
|
microsoft kinect camera |
1 |
|
microstructure |
1 |
|
microstructures |
1 |
|
mixed-valent manganites |
1 |
|
molecules |
1 |
|
morphology |
1 |
|
mote2 |
1 |
|
multi-head pooling attention |
1 |
|
multi-modal |
1 |
|
multiphases |
1 |
|
nanoclusters |
1 |
|
nanocomposite materials |
1 |
|
nanodomain |
1 |
|
nanoscale memristor |
1 |
|
nanosheet |
1 |
|
nanowire |
1 |
|
nazn13-type compounds |
1 |
|
nb-doped srtio |
1 |
|
nbt-bt-bfo thin films |
1 |
|
nd2cuo4 |
1 |
|
nitrate reduction |
1 |
|
non-linearity |
1 |
|
ohmic contact |
1 |
|
on/off ratio |
1 |
|
online review |
1 |
|
optical property |
1 |
|
optoelectronic devices |
1 |
|
orientation |
1 |
|
oxide thin films |
1 |
|
oxides |
1 |
|
oxygen content |
1 |
|
oxygen vacancy mechanism |
1 |
|
oxygen-deficiency |
1 |
|
p-n junction |
1 |
|
perovskite |
1 |
|
perovskite manganites |
1 |
|
perovskite nanocrystals |
1 |
|
perovskite oxides |
1 |
|
perovskites |
1 |
|
persistent photoconductivity |
1 |
|
pervoskite-type structure |
1 |
|
pfm |
1 |
|
phase competition |
1 |
|
phase separation |
1 |
|
photo-voltage |
1 |
|
photoconductivity |
1 |
|
photoelectric effects |
1 |
|
photoelectric response |
1 |
|
photoluminescence |
1 |
|
photonics |
1 |
|
photoresponsivity |
1 |
|
photosensitivity |
1 |
|
photovoltaic response |
1 |
|
physical properties |
1 |
|
physics |
1 |
|
pmnpt crystal |
1 |
|
polar nanodomain regions |
1 |
|
polarizing voltage |
1 |
|
poling treatment |
1 |
|
polymer ferroelectric |
1 |
|
positive moment |
1 |
|
pr0.7sr0.3mno3/la0.5ca0.5mno3/pr0.7sr0.3mno3 |
1 |
|
product type |
1 |
|
psychological distance |
1 |
|
pulse laser deposition |
1 |
|
pulsed laser deposition |
1 |
|
purchase intention |
1 |
|
quartz |
1 |
|
ramp |
1 |
|
rectifying properties |
1 |
|
reflectivity |
1 |
|
remnant field |
1 |
|
residual strain effects |
1 |
|
resistance modulation |
1 |
|
resistance steps |
1 |
|
resistive switching |
1 |
|
resistive switching behavior |
1 |
|
resistivity |
1 |
|
rietveld refine method |
1 |
|
roughening |
1 |
|
roughness |
1 |
|
schottky junction |
1 |
|
self-attention |
1 |
|
sem |
1 |
|
semiconductor–metal transition |
1 |
|
series resistance |
1 |
|
shallow donor state |
1 |
|
si doping |
1 |
|
silicon |
1 |
|
single-ion magnet |
1 |
|
small polaron |
1 |
|
small polarons (小極化子) |
1 |
|
sol-gel |
1 |
|
sol-gel (溶膠-凝膠) |
1 |
|
spin gap |
1 |
|
spin-gap opening temperature |
1 |
|
sputtering |
1 |
|
squid magnetometer |
1 |
|
stability |
1 |
|
standard deviation |
1 |
|
strain |
1 |
|
strain effect |
1 |
|
strain relaxation |
1 |
|
strongly correlated systems |
1 |
|
strontium titanate |
1 |
|
structural change |
1 |
|
structural effects |
1 |
|
structural properties |
1 |
|
substrate effects |
1 |
|
superconducting films |
1 |
|
superconducting m-t curve |
1 |
|
superconducting material |
1 |
|
superconducting paramagnetic meissner effect |
1 |
|
superconductivity |
1 |
|
superconductor |
1 |
|
surface |
1 |
|
surface 2deg |
1 |
|
surface morphology |
1 |
|
surfaces, interfaces and thin films |
1 |
|
ta doping |
1 |
|
tem |
1 |
|
temperature dependence of me effect |
1 |
|
temperature stability |
1 |
|
textured mgb2 |
1 |
|
thickness effect |
1 |
|
thin films |
1 |
|
thin films, perovskite manganite |
1 |
|
thin-film transistor (tft) |
1 |
|
threshold switching |
1 |
|
transmission electron microscopy |
1 |
|
transport |
1 |
|
transport properties |
1 |
|
trap |
1 |
|
tribocatalysis |
1 |
|
triboelectric charge density |
1 |
|
triboelectrification |
1 |
|
tribology and hardness |
1 |
|
tunability |
1 |
|
tungsten compounds |
1 |
|
ultra-fast photoresponse |
1 |
|
ultrathin films |
1 |
|
van der waals heterojuction |
1 |
|
variable range hopping (變程跳躍) |
1 |
|
vision transformer |
1 |
|
x-ray |
1 |
|
x-ray diffraction |
1 |
|
x-ray powder diffraction |
1 |
|
x-ray scattering |
1 |
|
xps |
1 |
|
y1-xcaxba1.9nd0.1cu 3oy cuprates |
1 |
|
yba2-xlaxcu3oy ceramic cuprates |
1 |
|
yba2-xndxcu3oy |
1 |
|
yba2cu2.99li0.01oy crystals |
1 |
|
yba2cu3ox thin films |
1 |
|
yba2o3oy |
1 |
|
ybco |
1 |
|
ybco thin films |
1 |
|
yttrium compounds |
1 |
|
zero resistance temperature |
1 |
