physics engineering |
7 |
1/f noise |
6 |
oled |
6 |
photoluminescence |
6 |
tris-(8-hydroxyquinoline) aluminium |
6 |
biosensing platforms |
5 |
clinical diagnostics |
5 |
concentration ratio |
5 |
experimental data |
5 |
hepatic tumors |
5 |
high-k dielectric |
5 |
high-k gate dielectric |
5 |
organic semiconductors |
5 |
and light-emitting devices |
4 |
device fabrication |
4 |
dielectric |
4 |
electroluminescence measurements |
4 |
electrophosphorescence |
4 |
fiber coupling |
4 |
gan |
4 |
ge mos |
4 |
hflaon |
4 |
hfo 2 |
4 |
hfo2 dielectrics |
4 |
hftio |
4 |
high k |
4 |
high-κ dielectric |
4 |
high-κ gate dielectric |
4 |
highly efficient oleds |
4 |
hybrid |
4 |
interlayer |
4 |
ito surface treatment |
4 |
laser micro-machining |
4 |
light-emitting diodes(leds) |
4 |
low-frequency noise |
4 |
luminescence conversion |
4 |
macrocyclic ligands |
4 |
materials science |
4 |
micro-light-emitting diode |
4 |
microdisplay |
4 |
mobility |
4 |
molecular electronics |
4 |
ofet (organic field-effect transistor) |
4 |
organic |
4 |
organic light emitting diodes |
4 |
organic light-emitting devices(oleds) |
4 |
organic thin-film transistor (otft) |
4 |
organic thin-film transistors |
4 |
otft |
4 |
passivation |
4 |
pentacene |
4 |
pentacene thin-film transistors |
4 |
phosphorescence |
4 |
phosphorescent materials |
4 |
phosphorescent platinum(ii) materials |
4 |
platinum(ii) porphyrin |
4 |
platinum(ii) schiff base complex |
4 |
platinum(ii) α-diimine arylacetylide complexes |
4 |
polymer |
4 |
post-deposition annealing |
4 |
red |
4 |
semiconductors |
4 |
tetradentate pt(ii) complexes |
4 |
tridentate pt(ii) complexes |
4 |
white |
4 |
x-ray diffraction |
4 |
yellow |
4 |
acupuncture |
3 |
animals |
3 |
anisotropy |
3 |
annealing |
3 |
applied field |
3 |
aspect ratio |
3 |
astrocyte |
3 |
axial symmetry |
3 |
blocking layer |
3 |
calcium |
3 |
capacitance-voltage characterization |
3 |
charge storage layer |
3 |
chemogenetic |
3 |
circular disk |
3 |
circular geometry |
3 |
crystallinity |
3 |
dc sputtering |
3 |
dielectric constants |
3 |
diffusion magnetic resonance imaging - methods |
3 |
edge effect |
3 |
edges |
3 |
emission beams |
3 |
emission pattern |
3 |
ferromagnetic ring |
3 |
fluorescence |
3 |
fluorination |
3 |
fluorine incorporation |
3 |
fluorine passivation |
3 |
fluorine plasma |
3 |
free layer (fl) |
3 |
gate-leakage current |
3 |
ge |
3 |
hard bias field |
3 |
hflao |
3 |
hfo2 |
3 |
hftion |
3 |
high quality |
3 |
high κ |
3 |
high-κ |
3 |
hjtio |
3 |
hydrogen sensor |
3 |
hydrogen sensors |
3 |
i-v measurements |
3 |
image processing, computer-assisted - methods |
3 |
ingan/gan |
3 |
interface properties |
3 |
la incorporation |
3 |
locking frequency |
3 |
low supply voltages |
3 |
low-frequency noise (lfn) |
3 |
mag-noise |
3 |
magnetic tunnel junction |
3 |
magnetic tunnel junction (mtj) |
3 |
medical imaging |
3 |
mice |
3 |
microwave field |
3 |
molecular structure |
3 |
monos memory |
3 |
mos |
3 |
mpi |
3 |
muscles |
3 |
n-methyl-d-aspartate receptor |
3 |
nanoscale phase separation |
3 |
needles |
3 |
neuron |
3 |
nitridation |
3 |
olfactory bulb - anatomy and histology |
3 |
optoelectronic devices |
3 |
organic chemicals - chemistry |
3 |
organic thin film transistors |
3 |
organic thin-film transistor |
3 |
organic transistor |
3 |
oxygen vacancy |
3 |
pentacenes / plasma treatment |
3 |
phase lock |
3 |
plasma treatment |
3 |
polymer solar cell |
3 |
ring domain |
3 |
sic |
3 |
silicon carbide |
3 |
somatosensory cortex |
3 |
spatial distribution |
3 |
spectrophotometry - instrumentation |
3 |
spin torque oscillator |
3 |
superparamagnetic nanoparticles |
3 |
surface properties |
3 |
talao |
3 |
thermal |
3 |
thermal mag-noise |
3 |
thin-film transistors |
3 |
transient receptor potential a1 |
3 |
transition-metal (tm) oxides |
3 |
tunneling layer |
3 |
two-photon in vivo imaging |
3 |
ultrasonic irradiation |
3 |
zrlao |
3 |
ac hot-carrier stress |
2 |
air ambient |
2 |
ammonia annealing |
2 |
angular dependence |
2 |
anneal |
2 |
annealing gas |
2 |
annealing temperatures |
2 |
batio3 |
2 |
biosensor applications |
2 |
blue leds |
2 |
c-v hysteresis |
2 |
canted region |
2 |
capacitance effect |
2 |
capacitance-equivalent thickness |
2 |
capacitance-voltage characteristics |
2 |
capacitors |
2 |
carrier mobility |
2 |
charge carrier processes |
2 |
charge-storage layer (csl) |
2 |
charge-trapping |
2 |
cie coordinates |
2 |
circuits |
2 |
coercivity |
2 |
color |
2 |
color uniformity |
2 |
comparative studies |
2 |
computer-aided design |
2 |
computers |
2 |
conduction mechanism |
2 |
conetic |
2 |
conic sections |
2 |
convergent beams |
2 |
copt |
2 |
core-shell nanoparticles |
2 |
coulomb scattering |
2 |
current voltage |
2 |
defect concentrations |
2 |
design |
2 |
device performance |
2 |
device reliability |
2 |
dielectric permittivities |
2 |
direct imprint lithography |
2 |
direct-write |
2 |
dislocations |
2 |
dna |
2 |
dual-vortex cores |
2 |
dynamic stress |
2 |
effective electron mobility |
2 |
electrical characteristic |
2 |
electrical properties |
2 |
electrical property |
2 |
electron detrapping |
2 |
electronics |
2 |
electronics and devices |
2 |
emission bands |
2 |
emission wavelength |
2 |
endurance |
2 |
equipment design |
2 |
equipment failure analysis |
2 |
exchange bias |
2 |
external magnetic field |
2 |
fct phase |
2 |
fept |
2 |
finite element analysis (fea) |
2 |
flash memory |
2 |
flat-band voltage |
2 |
flat-band voltage shift |
2 |
focusing optics |
2 |
fringing capacitance |
2 |
gaas |
2 |
gaas metal-oxide-semiconductor (mos) |
2 |
gaas mos |
2 |
gas sensor |
2 |
gate |
2 |
gate leakage current |
2 |
gate leakages |
2 |
gate voltages |
2 |
gate-leakage |
2 |
ge metal-oxide-semiconductor |
2 |
ge metal-oxide-semiconductor (ge mos) |
2 |
ge mos capacitors |
2 |
geon |
2 |
geox interlayer |
2 |
germanium |
2 |
hard material |
2 |
hard-axis bias field |
2 |
hflaon passivation layer |
2 |
hftio 2 |
2 |
hftion gate-dielectric |
2 |
high temperature |
2 |
high-dielectric constant (high-k) |
2 |
high-field stress |
2 |
high-k |
2 |
high-k dielectric. |
2 |
high-k dielectrics |
2 |
high-k gate stack |
2 |
high-κ gate dielectrics |
2 |
high-κ gate stack |
2 |
horizontal machining |
2 |
hot-carrier stress |
2 |
hydrogen-sensing properties |
2 |
hydrogen-sensing property |
2 |
ingaas metal-oxide-semiconductor (mos) |
2 |
ingaas mosfets |
2 |
ingan |
2 |
ingazno (igzo) |
2 |
inter-poly dielectric (ipd) |
2 |
interface property |
2 |
interface roughness scattering |
2 |
interface state density |
2 |
interface states |
2 |
interface states density |
2 |
interface traps |
2 |
interface-state |
2 |
interface-state density |
2 |
interfacial passivation layer (ipl) |
2 |
internal reflectors |
2 |
ion-beam assisted deposition |
2 |
ion-beam bombardment |
2 |
ion-beam deposition |
2 |
iron oxide nanoparticles |
2 |
iron-oxide magnetic nanoparticles |
2 |
johnson noise |
2 |
laalon |
2 |
lanthanide oxide |
2 |
laser application |
2 |
laser micromachining |
2 |
laser-induced damage |
2 |
lataon |
2 |
leakage current |
2 |
leds |
2 |
light extraction |
2 |
light-emitting diode (led) |
2 |
light-emitting diodes (leds) |
2 |
lighting - instrumentation |
2 |
lithography |
2 |
low-temperature processing |
2 |
machining methods |
2 |
magnetic field-effect transistor (magfet) |
2 |
magnetic flux concentration |
2 |
magnetic noise |
2 |
magnetic particle imaging (mpi) |
2 |
magnetic sensitivity |
2 |
magnetic sensor |
2 |
magnetic sensors |
2 |
magnetic shielding |
2 |
magnetic thin films |
2 |
magnetoresistive (mr) sensors |
2 |
mangetic tunnel junction (mtj) |
2 |
measurement setup |
2 |
metal oxide semiconductor device |
2 |
metal oxide semiconductor field-effect transistors. |
2 |
metal-insulator-sic |
2 |
metal-insulator-sic (misic) |
2 |
metal-oxide-semiconductor |
2 |
metal-oxide-semiconductor capacitors |
2 |
metaloxidenitrideoxidesilicon (monos) memory |
2 |
metal–oxide–semiconductor structures |
2 |
metal−oxide−semiconductor capacitors |
2 |
micro-lens |
2 |
micro-light emitting diode (micro-led) |
2 |
micro-structure |
2 |
microemulsion |
2 |
micromagnetic simulation |
2 |
monos |
2 |
mos capacitor |
2 |
mos capacitors |
2 |
mos devices |
2 |
mosfet |
2 |
mosfets |
2 |
mosfet’s |
2 |
multiple quantum wells |
2 |
n-mosfet |
2 |
n2o nitridation |
2 |
nano-structure |
2 |
nanolithography |
2 |
nanoscale science and low-d systems |
2 |
nanosecond ultraviolet laser |
2 |
natridation |
2 |
nb-doped la2o3 (lanbo) |
2 |
nd-based high-k |
2 |
nitrided |
2 |
nitrided ga2o3(gd2o3) (ggon) interlayer |
2 |
no |
2 |
nonvolatile memory |
2 |
optical devices |
2 |
optics, quantum optics and lasers |
2 |
oscillation frequency |
2 |
oxynitride |
2 |
passivation layer |
2 |
patterning |
2 |
pcr chips |
2 |
performance |
2 |
plasma |
2 |
plasma-nitridation |
2 |
pmosfet |
2 |
polysilicon thin-film transistor |
2 |
pretreatment |
2 |
program/erase (p/e) characteristics |
2 |
quantum wells |
2 |
relative intensity |
2 |
reliability |
2 |
remote coulomb scattering |
2 |
remote interfaceroughness scattering |
2 |
reproducibility of results |
2 |
resonance detection regime |
2 |
scattering |
2 |
schottky |
2 |
schottky barrier diode (sbd) |
2 |
schottky diode |
2 |
schottky-barrier diode (sbd) |
2 |
sectorial |
2 |
sectorial sd-magfets |
2 |
self-assembly |
2 |
semiconductor device |
2 |
sensitivity |
2 |
sensitivity and specificity |
2 |
sensitivity deterioration |
2 |
shot noise |
2 |
si/sio2 interface |
2 |
sic-based hydrogen sensor |
2 |
sige |
2 |
silicon dioxide |
2 |
silicon materials/devices. |
2 |
sio2 |
2 |
sio2/sic interface |
2 |
spatial pattern formation |
2 |
spin-torque diode |
2 |
split-drain |
2 |
stack gate dielectric |
2 |
surface treatment |
2 |
surfaces, interfaces and thin films |
2 |
switching time |
2 |
taon |
2 |
taon interlayer |
2 |
temperature-controlled system |
2 |
thermal noise |
2 |
thermal patterning |
2 |
thin films |
2 |
threshold voltage |
2 |
tilted fixed-layer magnetization |
2 |
transmission electron microscopy |
2 |
tunable emissions |
2 |
tunneling |
2 |
tunneling magnetoresistance (tmr) |
2 |
vertical stacking |
2 |
vertically mounted |
2 |
viewing angle |
2 |
voltage supply |
2 |
vortex-core motion |
2 |
vortex-core switching |
2 |
wet n 2o oxidation |
2 |
wet-no oxidation |
2 |
white color |
2 |
white light emission |
2 |
white light emitting diodes |
2 |
white light-emitting diode (led) |
2 |
y xal yo |
2 |
yttrium |
2 |
yttrium doping |
2 |
a. semiconductors |
1 |
active layer |
1 |
air stability |
1 |
al-doped zno |
1 |
al-doped zro2 (zralo) |
1 |
al2o3 |
1 |
al2o3 dielectric |
1 |
alternately depositing la oxynitride (laon)/tion |
1 |
aluminum |
1 |
amorphous indium-gallium-zinc oxide (α-igzo) |
1 |
amorphous ingamgo |
1 |
amorphous ingazno (a-igzo) |
1 |
anneal ambient |
1 |
annealing temperature |
1 |
ar plasma treatment |
1 |
artificial neurons |
1 |
artificial synapses |
1 |
atmospheric water |
1 |
atomic layer deposition |
1 |
band bending |
1 |
barrier heights |
1 |
batio 3 |
1 |
bias stress effect |
1 |
bipolar devices |
1 |
bst thin film |
1 |
bst thin-film |
1 |
buffer layer |
1 |
capacitancevoltage characteristics |
1 |
carrier conduction |
1 |
cf4/o2-plasma treatment |
1 |
channel length |
1 |
characterization and evaluation materials |
1 |
charge trap |
1 |
charge trapping |
1 |
charge-trapping (ct) layer (ctl) |
1 |
charge-trapping layer |
1 |
charge-trapping layer (ctl) |
1 |
chemistry |
1 |
co-reactive sputter |
1 |
condensed matter |
1 |
conduction band offset |
1 |
conduction-band offset |
1 |
conductivity modulation |
1 |
conformal mapping |
1 |
contact metal |
1 |
contact resistance |
1 |
coulomb screening effect |
1 |
crystallization |
1 |
cupc-doping |
1 |
curved surface |
1 |
cvd |
1 |
dielectric devices |
1 |
dielectric materials |
1 |
dielectrics |
1 |
down-scaling thin-film transistor (tft) |
1 |
dry oxygen |
1 |
educational institutions |
1 |
electric field effects |
1 |
electrical engineering |
1 |
electrical instability |
1 |
electrical measurements and properties |
1 |
electrochemistry |
1 |
electrode thickness |
1 |
electrodes |
1 |
electron field mobility |
1 |
electron traps |
1 |
engineering |
1 |
f-plasma treatment |
1 |
fabrication method |
1 |
fets |
1 |
field effect transistors |
1 |
field-effect mobility |
1 |
field-effect transistor |
1 |
flexibility |
1 |
flexible electronics |
1 |
flexiblity |
1 |
flow sensors |
1 |
fluorine |
1 |
fluorine plasma treatment |
1 |
fluorine treatment |
1 |
fluorine-plasma treatment |
1 |
forming compliance current |
1 |
fowler-nordheim tunneling |
1 |
fpt |
1 |
fringing field |
1 |
ga2o3 (gd2o3) |
1 |
ga2o3(gd2o3) (ggo) interlayer |
1 |
gaas metal-oxide-semiconductor (mos) capacitors |
1 |
gaas mos capacitor |
1 |
gaas mos capacitors |
1 |
gaas mos devices |
1 |
gallium arsenide |
1 |
gallium nitride |
1 |
gallium oxide |
1 |
gas annealing |
1 |
gate dielectric |
1 |
gate dielectrics |
1 |
gate electron concentration |
1 |
gate insulator |
1 |
gate leakage |
1 |
gate material |
1 |
gaxzn1‐xo |
1 |
ge metal-oxide-semiconductor (mos) |
1 |
geoi/geon mosfets |
1 |
germanate |
1 |
h sensor |
1 |
h2 sensor |
1 |
h2 sensors |
1 |
hafnium compounds |
1 |
hafnium oxide |
1 |
hafnium oxides |
1 |
heterojunction |
1 |
heterostructure |
1 |
hf-doped bati03 |
1 |
hf-la oxide |
1 |
hf-tio gate dielectric |
1 |
hflao film |
1 |
hflao. |
1 |
hfo |
1 |
hfon |
1 |
high mobility |
1 |
high temperature sensors |
1 |
high-k dieletric |
1 |
high-temperature sensor |
1 |
high-temperature sensors |
1 |
high-temperature thermal sensor |
1 |
highκ dielectric |
1 |
high‐electron‐mobility transistors |
1 |
humidity sensitivity |
1 |
hydrogen |
1 |
hydrogen gas |
1 |
hydrogen sesnors |
1 |
hygroscopic property |
1 |
hysteresis |
1 |
ingazno |
1 |
ino |
1 |
instruments |
1 |
integrated sensors |
1 |
interface quality |
1 |
interface trap density |
1 |
interfaces |
1 |
interfacial layer |
1 |
interfacial passivation layer |
1 |
interfacial passivation layer (ipl). |
1 |
ion-implantation |
1 |
lanbo |
1 |
lanthanum oxide |
1 |
laon interlayer |
1 |
laon/si dual passivation layer |
1 |
large-grain polysilicon on insulator |
1 |
lataon dielectric |
1 |
latch-up |
1 |
lation |
1 |
localized states |
1 |
logic gates |
1 |
low temperature |
1 |
low thermal budget |
1 |
low threshold |
1 |
manos |
1 |
meh-ppv/pcbm |
1 |
memory applications |
1 |
memory window |
1 |
metal gate |
1 |
metal oxide |
1 |
metal-hydroxyl (m-oh) |
1 |
metal-induced lateral |
1 |
metal-oxide semiconductors |
1 |
metal-oxide-nitride-oxide- silicon (monos) |
1 |
methane |
1 |
mica dielectric |
1 |
minority-carrier exclusion |
1 |
minority-carrier exclusion effect |
1 |
modeling |
1 |
molybdenum |
1 |
molybdenum oxide |
1 |
monolithic integration |
1 |
monos devices |
1 |
mos transistor |
1 |
mos2 fets |
1 |
mos2 transistor |
1 |
multilayer mos2 |
1 |
n2o |
1 |
nanorods |
1 |
nanostructures |
1 |
nanotechnology |
1 |
nb-doped ga2o3 |
1 |
nb-doped sr 1-xla xtio 3 thin film |
1 |
nblao |
1 |
nblao gate dielectric |
1 |
nbo |
1 |
nbo x memristors |
1 |
ndhfon dielectric |
1 |
ndnbo |
1 |
ndtion dielectric |
1 |
nh3-plasma treatment |
1 |
niobium oxide |
1 |
nitrided germanate |
1 |
nitrided la 2o 3 |
1 |
nitrogen |
1 |
nitrogen incorporation |
1 |
ntc effect |
1 |
operating procedures and materials treatment |
1 |
optical and electronic materials |
1 |
organic photovoltaic |
1 |
organic thin-film transistors (tfts) |
1 |
oxidation |
1 |
oxide capacitance |
1 |
oxide-charge density |
1 |
oxide-semiconductor devices |
1 |
palladium |
1 |
pd/wo3/sic |
1 |
pentacene organic thin-film transistor (otft) |
1 |
pentacene organic thin-film transistors |
1 |
pentacene thickness |
1 |
permittivity |
1 |
phonons |
1 |
photosensitivity |
1 |
phototransistor |
1 |
physics |
1 |
planar split dual gate |
1 |
plasmas |
1 |
poly(3-hexylthiophene) (p3ht) |
1 |
polyimide |
1 |
polymer thin-film transistor (ptft) |
1 |
polymer thin-film transistors |
1 |
polymer thin-film transistors (ptfts) |
1 |
postmetallization annealing (pma) |
1 |
power inte- grated circuits |
1 |
power transistors |
1 |
program/erase speed |
1 |
remote phonon scattering |
1 |
remote phonon scattering (rps) |
1 |
resistance |
1 |
responsivity |
1 |
retention characteristics |
1 |
rf sputtering |
1 |
saturation mobility |
1 |
schottky-diode |
1 |
screening effect |
1 |
semiconducting polymer |
1 |
semiconductor devices and materials |
1 |
sensor |
1 |
short-channel effect |
1 |
silicon |
1 |
silicon film |
1 |
silicon-on-insulator |
1 |
single-chip |
1 |
sion |
1 |
soi |
1 |
solar-blind photodetector |
1 |
sot |
1 |
spiking neural networks |
1 |
spreading resistance |
1 |
spreading-resistance |
1 |
sputtering |
1 |
sr1-xlaxtio3 thin films |
1 |
srnbxti1-xo3 thin film |
1 |
srtio 3 |
1 |
stability |
1 |
stacked gate dielectric |
1 |
stacked gate-dielectric |
1 |
stress effect |
1 |
subthreshold swing |
1 |
sulfur |
1 |
surface modification |
1 |
surface nitridation |
1 |
surface passivation |
1 |
surface recombination |
1 |
surface roughness |
1 |
surface-roughness scattering |
1 |
surfaces and interfaces and thin films |
1 |
ta2o5 |
1 |
tantalum oxide |
1 |
taon/geon |
1 |
tayon passivation layer |
1 |
tce oxidation |
1 |
temperature sensor |
1 |
temperature sensors |
1 |
temperature-sensing elements |
1 |
terms-dual interlayer |
1 |
thermal resistor |
1 |
thermal sensitivity |
1 |
thin film transistors |
1 |
thin-film transistor |
1 |
thin-film transistor (tft) |
1 |
thin-film transistor (tft). |
1 |
thin-film transistors (tfts) |
1 |
thin-films |
1 |
threshold-voltage shift |
1 |
top-gated transistors |
1 |
transient response |
1 |
transistors |
1 |
trench-gate |
1 |
trichloroethylene |
1 |
tunability |
1 |
tunable capacitor |
1 |
tungsten oxide |
1 |
two-dimensional model |
1 |
two‐dimensional electron gas |
1 |
ultra-thin-body |
1 |
ultrasonic transducers |
1 |
ultraviolet msm photodetector |
1 |
urbach energy |
1 |
xps |
1 |
y doping |
1 |
yalo x |
1 |
zinc oxide |
1 |
zno |
1 |
zr incorporation |
1 |
α-igzo |
1 |