|
physics engineering |
7 |
|
1/f noise |
6 |
|
oled |
6 |
|
photoluminescence |
6 |
|
tris-(8-hydroxyquinoline) aluminium |
6 |
|
biosensing platforms |
5 |
|
clinical diagnostics |
5 |
|
concentration ratio |
5 |
|
experimental data |
5 |
|
hepatic tumors |
5 |
|
high-k dielectric |
5 |
|
high-k gate dielectric |
5 |
|
organic semiconductors |
5 |
|
and light-emitting devices |
4 |
|
device fabrication |
4 |
|
dielectric |
4 |
|
electroluminescence measurements |
4 |
|
electrophosphorescence |
4 |
|
fiber coupling |
4 |
|
gan |
4 |
|
ge mos |
4 |
|
hflaon |
4 |
|
hfo 2 |
4 |
|
hfo2 dielectrics |
4 |
|
hftio |
4 |
|
high k |
4 |
|
high-κ dielectric |
4 |
|
high-κ gate dielectric |
4 |
|
highly efficient oleds |
4 |
|
hybrid |
4 |
|
interlayer |
4 |
|
ito surface treatment |
4 |
|
laser micro-machining |
4 |
|
light-emitting diodes(leds) |
4 |
|
low-frequency noise |
4 |
|
luminescence conversion |
4 |
|
macrocyclic ligands |
4 |
|
materials science |
4 |
|
micro-light-emitting diode |
4 |
|
microdisplay |
4 |
|
mobility |
4 |
|
molecular electronics |
4 |
|
ofet (organic field-effect transistor) |
4 |
|
organic |
4 |
|
organic light emitting diodes |
4 |
|
organic light-emitting devices(oleds) |
4 |
|
organic thin-film transistor (otft) |
4 |
|
organic thin-film transistors |
4 |
|
otft |
4 |
|
passivation |
4 |
|
pentacene |
4 |
|
pentacene thin-film transistors |
4 |
|
phosphorescence |
4 |
|
phosphorescent materials |
4 |
|
phosphorescent platinum(ii) materials |
4 |
|
platinum(ii) porphyrin |
4 |
|
platinum(ii) schiff base complex |
4 |
|
platinum(ii) α-diimine arylacetylide complexes |
4 |
|
polymer |
4 |
|
post-deposition annealing |
4 |
|
red |
4 |
|
semiconductors |
4 |
|
tetradentate pt(ii) complexes |
4 |
|
tridentate pt(ii) complexes |
4 |
|
white |
4 |
|
x-ray diffraction |
4 |
|
yellow |
4 |
|
acupuncture |
3 |
|
animals |
3 |
|
anisotropy |
3 |
|
annealing |
3 |
|
applied field |
3 |
|
aspect ratio |
3 |
|
astrocyte |
3 |
|
axial symmetry |
3 |
|
blocking layer |
3 |
|
calcium |
3 |
|
capacitance-voltage characterization |
3 |
|
charge storage layer |
3 |
|
chemogenetic |
3 |
|
circular disk |
3 |
|
circular geometry |
3 |
|
crystallinity |
3 |
|
dc sputtering |
3 |
|
dielectric constants |
3 |
|
diffusion magnetic resonance imaging - methods |
3 |
|
edge effect |
3 |
|
edges |
3 |
|
emission beams |
3 |
|
emission pattern |
3 |
|
ferromagnetic ring |
3 |
|
fluorescence |
3 |
|
fluorination |
3 |
|
fluorine incorporation |
3 |
|
fluorine passivation |
3 |
|
fluorine plasma |
3 |
|
free layer (fl) |
3 |
|
gate-leakage current |
3 |
|
ge |
3 |
|
hard bias field |
3 |
|
hflao |
3 |
|
hfo2 |
3 |
|
hftion |
3 |
|
high quality |
3 |
|
high κ |
3 |
|
high-κ |
3 |
|
hjtio |
3 |
|
hydrogen sensor |
3 |
|
hydrogen sensors |
3 |
|
i-v measurements |
3 |
|
image processing, computer-assisted - methods |
3 |
|
ingan/gan |
3 |
|
interface properties |
3 |
|
la incorporation |
3 |
|
locking frequency |
3 |
|
low supply voltages |
3 |
|
low-frequency noise (lfn) |
3 |
|
mag-noise |
3 |
|
magnetic tunnel junction |
3 |
|
magnetic tunnel junction (mtj) |
3 |
|
medical imaging |
3 |
|
mice |
3 |
|
microwave field |
3 |
|
molecular structure |
3 |
|
monos memory |
3 |
|
mos |
3 |
|
mpi |
3 |
|
muscles |
3 |
|
n-methyl-d-aspartate receptor |
3 |
|
nanoscale phase separation |
3 |
|
needles |
3 |
|
neuron |
3 |
|
nitridation |
3 |
|
olfactory bulb - anatomy and histology |
3 |
|
optoelectronic devices |
3 |
|
organic chemicals - chemistry |
3 |
|
organic thin film transistors |
3 |
|
organic thin-film transistor |
3 |
|
organic transistor |
3 |
|
oxygen vacancy |
3 |
|
pentacenes / plasma treatment |
3 |
|
phase lock |
3 |
|
plasma treatment |
3 |
|
polymer solar cell |
3 |
|
ring domain |
3 |
|
sic |
3 |
|
silicon carbide |
3 |
|
somatosensory cortex |
3 |
|
spatial distribution |
3 |
|
spectrophotometry - instrumentation |
3 |
|
spin torque oscillator |
3 |
|
superparamagnetic nanoparticles |
3 |
|
surface properties |
3 |
|
talao |
3 |
|
thermal |
3 |
|
thermal mag-noise |
3 |
|
thin-film transistors |
3 |
|
transient receptor potential a1 |
3 |
|
transition-metal (tm) oxides |
3 |
|
tunneling layer |
3 |
|
two-photon in vivo imaging |
3 |
|
ultrasonic irradiation |
3 |
|
zrlao |
3 |
|
ac hot-carrier stress |
2 |
|
air ambient |
2 |
|
ammonia annealing |
2 |
|
angular dependence |
2 |
|
anneal |
2 |
|
annealing gas |
2 |
|
annealing temperatures |
2 |
|
batio3 |
2 |
|
biosensor applications |
2 |
|
blue leds |
2 |
|
c-v hysteresis |
2 |
|
canted region |
2 |
|
capacitance effect |
2 |
|
capacitance-equivalent thickness |
2 |
|
capacitance-voltage characteristics |
2 |
|
capacitors |
2 |
|
carrier mobility |
2 |
|
charge carrier processes |
2 |
|
charge-storage layer (csl) |
2 |
|
charge-trapping |
2 |
|
cie coordinates |
2 |
|
circuits |
2 |
|
coercivity |
2 |
|
color |
2 |
|
color uniformity |
2 |
|
comparative studies |
2 |
|
computer-aided design |
2 |
|
computers |
2 |
|
conduction mechanism |
2 |
|
conetic |
2 |
|
conic sections |
2 |
|
convergent beams |
2 |
|
copt |
2 |
|
core-shell nanoparticles |
2 |
|
coulomb scattering |
2 |
|
current voltage |
2 |
|
defect concentrations |
2 |
|
design |
2 |
|
device performance |
2 |
|
device reliability |
2 |
|
dielectric permittivities |
2 |
|
direct imprint lithography |
2 |
|
direct-write |
2 |
|
dislocations |
2 |
|
dna |
2 |
|
dual-vortex cores |
2 |
|
dynamic stress |
2 |
|
effective electron mobility |
2 |
|
electrical characteristic |
2 |
|
electrical properties |
2 |
|
electrical property |
2 |
|
electron detrapping |
2 |
|
electronics |
2 |
|
electronics and devices |
2 |
|
emission bands |
2 |
|
emission wavelength |
2 |
|
endurance |
2 |
|
equipment design |
2 |
|
equipment failure analysis |
2 |
|
exchange bias |
2 |
|
external magnetic field |
2 |
|
fct phase |
2 |
|
fept |
2 |
|
finite element analysis (fea) |
2 |
|
flash memory |
2 |
|
flat-band voltage |
2 |
|
flat-band voltage shift |
2 |
|
focusing optics |
2 |
|
fringing capacitance |
2 |
|
gaas |
2 |
|
gaas metal-oxide-semiconductor (mos) |
2 |
|
gaas mos |
2 |
|
gas sensor |
2 |
|
gate |
2 |
|
gate leakage current |
2 |
|
gate leakages |
2 |
|
gate voltages |
2 |
|
gate-leakage |
2 |
|
ge metal-oxide-semiconductor |
2 |
|
ge metal-oxide-semiconductor (ge mos) |
2 |
|
ge mos capacitors |
2 |
|
geon |
2 |
|
geox interlayer |
2 |
|
germanium |
2 |
|
hard material |
2 |
|
hard-axis bias field |
2 |
|
hflaon passivation layer |
2 |
|
hftio 2 |
2 |
|
hftion gate-dielectric |
2 |
|
high temperature |
2 |
|
high-dielectric constant (high-k) |
2 |
|
high-field stress |
2 |
|
high-k |
2 |
|
high-k dielectric. |
2 |
|
high-k dielectrics |
2 |
|
high-k gate stack |
2 |
|
high-κ gate dielectrics |
2 |
|
high-κ gate stack |
2 |
|
horizontal machining |
2 |
|
hot-carrier stress |
2 |
|
hydrogen-sensing properties |
2 |
|
hydrogen-sensing property |
2 |
|
ingaas metal-oxide-semiconductor (mos) |
2 |
|
ingaas mosfets |
2 |
|
ingan |
2 |
|
ingazno (igzo) |
2 |
|
inter-poly dielectric (ipd) |
2 |
|
interface property |
2 |
|
interface roughness scattering |
2 |
|
interface state density |
2 |
|
interface states |
2 |
|
interface states density |
2 |
|
interface traps |
2 |
|
interface-state |
2 |
|
interface-state density |
2 |
|
interfacial passivation layer (ipl) |
2 |
|
internal reflectors |
2 |
|
ion-beam assisted deposition |
2 |
|
ion-beam bombardment |
2 |
|
ion-beam deposition |
2 |
|
iron oxide nanoparticles |
2 |
|
iron-oxide magnetic nanoparticles |
2 |
|
johnson noise |
2 |
|
laalon |
2 |
|
lanthanide oxide |
2 |
|
laser application |
2 |
|
laser micromachining |
2 |
|
laser-induced damage |
2 |
|
lataon |
2 |
|
leakage current |
2 |
|
leds |
2 |
|
light extraction |
2 |
|
light-emitting diode (led) |
2 |
|
light-emitting diodes (leds) |
2 |
|
lighting - instrumentation |
2 |
|
lithography |
2 |
|
low-temperature processing |
2 |
|
machining methods |
2 |
|
magnetic field-effect transistor (magfet) |
2 |
|
magnetic flux concentration |
2 |
|
magnetic noise |
2 |
|
magnetic particle imaging (mpi) |
2 |
|
magnetic sensitivity |
2 |
|
magnetic sensor |
2 |
|
magnetic sensors |
2 |
|
magnetic shielding |
2 |
|
magnetic thin films |
2 |
|
magnetoresistive (mr) sensors |
2 |
|
mangetic tunnel junction (mtj) |
2 |
|
measurement setup |
2 |
|
metal oxide semiconductor device |
2 |
|
metal oxide semiconductor field-effect transistors. |
2 |
|
metal-insulator-sic |
2 |
|
metal-insulator-sic (misic) |
2 |
|
metal-oxide-semiconductor |
2 |
|
metal-oxide-semiconductor capacitors |
2 |
|
metaloxidenitrideoxidesilicon (monos) memory |
2 |
|
metal–oxide–semiconductor structures |
2 |
|
metal−oxide−semiconductor capacitors |
2 |
|
micro-lens |
2 |
|
micro-light emitting diode (micro-led) |
2 |
|
micro-structure |
2 |
|
microemulsion |
2 |
|
micromagnetic simulation |
2 |
|
monos |
2 |
|
mos capacitor |
2 |
|
mos capacitors |
2 |
|
mos devices |
2 |
|
mosfet |
2 |
|
mosfets |
2 |
|
mosfet’s |
2 |
|
multiple quantum wells |
2 |
|
n-mosfet |
2 |
|
n2o nitridation |
2 |
|
nano-structure |
2 |
|
nanolithography |
2 |
|
nanoscale science and low-d systems |
2 |
|
nanosecond ultraviolet laser |
2 |
|
natridation |
2 |
|
nb-doped la2o3 (lanbo) |
2 |
|
nd-based high-k |
2 |
|
nitrided |
2 |
|
nitrided ga2o3(gd2o3) (ggon) interlayer |
2 |
|
no |
2 |
|
nonvolatile memory |
2 |
|
optical devices |
2 |
|
optics, quantum optics and lasers |
2 |
|
oscillation frequency |
2 |
|
oxynitride |
2 |
|
passivation layer |
2 |
|
patterning |
2 |
|
pcr chips |
2 |
|
performance |
2 |
|
plasma |
2 |
|
plasma-nitridation |
2 |
|
pmosfet |
2 |
|
polysilicon thin-film transistor |
2 |
|
pretreatment |
2 |
|
program/erase (p/e) characteristics |
2 |
|
quantum wells |
2 |
|
relative intensity |
2 |
|
reliability |
2 |
|
remote coulomb scattering |
2 |
|
remote interfaceroughness scattering |
2 |
|
reproducibility of results |
2 |
|
resonance detection regime |
2 |
|
scattering |
2 |
|
schottky |
2 |
|
schottky barrier diode (sbd) |
2 |
|
schottky diode |
2 |
|
schottky-barrier diode (sbd) |
2 |
|
sectorial |
2 |
|
sectorial sd-magfets |
2 |
|
self-assembly |
2 |
|
semiconductor device |
2 |
|
sensitivity |
2 |
|
sensitivity and specificity |
2 |
|
sensitivity deterioration |
2 |
|
shot noise |
2 |
|
si/sio2 interface |
2 |
|
sic-based hydrogen sensor |
2 |
|
sige |
2 |
|
silicon dioxide |
2 |
|
silicon materials/devices. |
2 |
|
sio2 |
2 |
|
sio2/sic interface |
2 |
|
spatial pattern formation |
2 |
|
spin-torque diode |
2 |
|
split-drain |
2 |
|
stack gate dielectric |
2 |
|
surface treatment |
2 |
|
surfaces, interfaces and thin films |
2 |
|
switching time |
2 |
|
taon |
2 |
|
taon interlayer |
2 |
|
temperature-controlled system |
2 |
|
thermal noise |
2 |
|
thermal patterning |
2 |
|
thin films |
2 |
|
threshold voltage |
2 |
|
tilted fixed-layer magnetization |
2 |
|
transmission electron microscopy |
2 |
|
tunable emissions |
2 |
|
tunneling |
2 |
|
tunneling magnetoresistance (tmr) |
2 |
|
vertical stacking |
2 |
|
vertically mounted |
2 |
|
viewing angle |
2 |
|
voltage supply |
2 |
|
vortex-core motion |
2 |
|
vortex-core switching |
2 |
|
wet n 2o oxidation |
2 |
|
wet-no oxidation |
2 |
|
white color |
2 |
|
white light emission |
2 |
|
white light emitting diodes |
2 |
|
white light-emitting diode (led) |
2 |
|
y xal yo |
2 |
|
yttrium |
2 |
|
yttrium doping |
2 |
|
a. semiconductors |
1 |
|
active layer |
1 |
|
air stability |
1 |
|
al-doped zno |
1 |
|
al-doped zro2 (zralo) |
1 |
|
al2o3 |
1 |
|
al2o3 dielectric |
1 |
|
alternately depositing la oxynitride (laon)/tion |
1 |
|
aluminum |
1 |
|
amorphous indium-gallium-zinc oxide (α-igzo) |
1 |
|
amorphous ingamgo |
1 |
|
amorphous ingazno (a-igzo) |
1 |
|
anneal ambient |
1 |
|
annealing temperature |
1 |
|
ar plasma treatment |
1 |
|
artificial neurons |
1 |
|
artificial synapses |
1 |
|
atmospheric water |
1 |
|
atomic layer deposition |
1 |
|
band bending |
1 |
|
barrier heights |
1 |
|
batio 3 |
1 |
|
bias stress effect |
1 |
|
bipolar devices |
1 |
|
bst thin film |
1 |
|
bst thin-film |
1 |
|
buffer layer |
1 |
|
capacitancevoltage characteristics |
1 |
|
carrier conduction |
1 |
|
cf4/o2-plasma treatment |
1 |
|
channel length |
1 |
|
characterization and evaluation materials |
1 |
|
charge trap |
1 |
|
charge trapping |
1 |
|
charge-trapping (ct) layer (ctl) |
1 |
|
charge-trapping layer |
1 |
|
charge-trapping layer (ctl) |
1 |
|
chemistry |
1 |
|
co-reactive sputter |
1 |
|
condensed matter |
1 |
|
conduction band offset |
1 |
|
conduction-band offset |
1 |
|
conductivity modulation |
1 |
|
conformal mapping |
1 |
|
contact metal |
1 |
|
contact resistance |
1 |
|
coulomb screening effect |
1 |
|
crystallization |
1 |
|
cupc-doping |
1 |
|
curved surface |
1 |
|
cvd |
1 |
|
dielectric devices |
1 |
|
dielectric materials |
1 |
|
dielectrics |
1 |
|
down-scaling thin-film transistor (tft) |
1 |
|
dry oxygen |
1 |
|
educational institutions |
1 |
|
electric field effects |
1 |
|
electrical engineering |
1 |
|
electrical instability |
1 |
|
electrical measurements and properties |
1 |
|
electrochemistry |
1 |
|
electrode thickness |
1 |
|
electrodes |
1 |
|
electron field mobility |
1 |
|
electron traps |
1 |
|
engineering |
1 |
|
f-plasma treatment |
1 |
|
fabrication method |
1 |
|
fets |
1 |
|
field effect transistors |
1 |
|
field-effect mobility |
1 |
|
field-effect transistor |
1 |
|
flexibility |
1 |
|
flexible electronics |
1 |
|
flexiblity |
1 |
|
flow sensors |
1 |
|
fluorine |
1 |
|
fluorine plasma treatment |
1 |
|
fluorine treatment |
1 |
|
fluorine-plasma treatment |
1 |
|
forming compliance current |
1 |
|
fowler-nordheim tunneling |
1 |
|
fpt |
1 |
|
fringing field |
1 |
|
ga2o3 (gd2o3) |
1 |
|
ga2o3(gd2o3) (ggo) interlayer |
1 |
|
gaas metal-oxide-semiconductor (mos) capacitors |
1 |
|
gaas mos capacitor |
1 |
|
gaas mos capacitors |
1 |
|
gaas mos devices |
1 |
|
gallium arsenide |
1 |
|
gallium nitride |
1 |
|
gallium oxide |
1 |
|
gas annealing |
1 |
|
gate dielectric |
1 |
|
gate dielectrics |
1 |
|
gate electron concentration |
1 |
|
gate insulator |
1 |
|
gate leakage |
1 |
|
gate material |
1 |
|
gaxzn1‐xo |
1 |
|
ge metal-oxide-semiconductor (mos) |
1 |
|
geoi/geon mosfets |
1 |
|
germanate |
1 |
|
h sensor |
1 |
|
h2 sensor |
1 |
|
h2 sensors |
1 |
|
hafnium compounds |
1 |
|
hafnium oxide |
1 |
|
hafnium oxides |
1 |
|
heterojunction |
1 |
|
heterostructure |
1 |
|
hf-doped bati03 |
1 |
|
hf-la oxide |
1 |
|
hf-tio gate dielectric |
1 |
|
hflao film |
1 |
|
hflao. |
1 |
|
hfo |
1 |
|
hfon |
1 |
|
high mobility |
1 |
|
high temperature sensors |
1 |
|
high-k dieletric |
1 |
|
high-temperature sensor |
1 |
|
high-temperature sensors |
1 |
|
high-temperature thermal sensor |
1 |
|
highκ dielectric |
1 |
|
high‐electron‐mobility transistors |
1 |
|
humidity sensitivity |
1 |
|
hydrogen |
1 |
|
hydrogen gas |
1 |
|
hydrogen sesnors |
1 |
|
hygroscopic property |
1 |
|
hysteresis |
1 |
|
ingazno |
1 |
|
ino |
1 |
|
instruments |
1 |
|
integrated sensors |
1 |
|
interface quality |
1 |
|
interface trap density |
1 |
|
interfaces |
1 |
|
interfacial layer |
1 |
|
interfacial passivation layer |
1 |
|
interfacial passivation layer (ipl). |
1 |
|
ion-implantation |
1 |
|
lanbo |
1 |
|
lanthanum oxide |
1 |
|
laon interlayer |
1 |
|
laon/si dual passivation layer |
1 |
|
large-grain polysilicon on insulator |
1 |
|
lataon dielectric |
1 |
|
latch-up |
1 |
|
lation |
1 |
|
localized states |
1 |
|
logic gates |
1 |
|
low temperature |
1 |
|
low thermal budget |
1 |
|
low threshold |
1 |
|
manos |
1 |
|
meh-ppv/pcbm |
1 |
|
memory applications |
1 |
|
memory window |
1 |
|
metal gate |
1 |
|
metal oxide |
1 |
|
metal-hydroxyl (m-oh) |
1 |
|
metal-induced lateral |
1 |
|
metal-oxide semiconductors |
1 |
|
metal-oxide-nitride-oxide- silicon (monos) |
1 |
|
methane |
1 |
|
mica dielectric |
1 |
|
minority-carrier exclusion |
1 |
|
minority-carrier exclusion effect |
1 |
|
modeling |
1 |
|
molybdenum |
1 |
|
molybdenum oxide |
1 |
|
monolithic integration |
1 |
|
monos devices |
1 |
|
mos transistor |
1 |
|
mos2 fets |
1 |
|
mos2 transistor |
1 |
|
multilayer mos2 |
1 |
|
n2o |
1 |
|
nanorods |
1 |
|
nanostructures |
1 |
|
nanotechnology |
1 |
|
nb-doped ga2o3 |
1 |
|
nb-doped sr 1-xla xtio 3 thin film |
1 |
|
nblao |
1 |
|
nblao gate dielectric |
1 |
|
nbo |
1 |
|
nbo x memristors |
1 |
|
ndhfon dielectric |
1 |
|
ndnbo |
1 |
|
ndtion dielectric |
1 |
|
nh3-plasma treatment |
1 |
|
niobium oxide |
1 |
|
nitrided germanate |
1 |
|
nitrided la 2o 3 |
1 |
|
nitrogen |
1 |
|
nitrogen incorporation |
1 |
|
ntc effect |
1 |
|
operating procedures and materials treatment |
1 |
|
optical and electronic materials |
1 |
|
organic photovoltaic |
1 |
|
organic thin-film transistors (tfts) |
1 |
|
oxidation |
1 |
|
oxide capacitance |
1 |
|
oxide-charge density |
1 |
|
oxide-semiconductor devices |
1 |
|
palladium |
1 |
|
pd/wo3/sic |
1 |
|
pentacene organic thin-film transistor (otft) |
1 |
|
pentacene organic thin-film transistors |
1 |
|
pentacene thickness |
1 |
|
permittivity |
1 |
|
phonons |
1 |
|
photosensitivity |
1 |
|
phototransistor |
1 |
|
physics |
1 |
|
planar split dual gate |
1 |
|
plasmas |
1 |
|
poly(3-hexylthiophene) (p3ht) |
1 |
|
polyimide |
1 |
|
polymer thin-film transistor (ptft) |
1 |
|
polymer thin-film transistors |
1 |
|
polymer thin-film transistors (ptfts) |
1 |
|
postmetallization annealing (pma) |
1 |
|
power inte- grated circuits |
1 |
|
power transistors |
1 |
|
program/erase speed |
1 |
|
remote phonon scattering |
1 |
|
remote phonon scattering (rps) |
1 |
|
resistance |
1 |
|
responsivity |
1 |
|
retention characteristics |
1 |
|
rf sputtering |
1 |
|
saturation mobility |
1 |
|
schottky-diode |
1 |
|
screening effect |
1 |
|
semiconducting polymer |
1 |
|
semiconductor devices and materials |
1 |
|
sensor |
1 |
|
short-channel effect |
1 |
|
silicon |
1 |
|
silicon film |
1 |
|
silicon-on-insulator |
1 |
|
single-chip |
1 |
|
sion |
1 |
|
soi |
1 |
|
solar-blind photodetector |
1 |
|
sot |
1 |
|
spiking neural networks |
1 |
|
spreading resistance |
1 |
|
spreading-resistance |
1 |
|
sputtering |
1 |
|
sr1-xlaxtio3 thin films |
1 |
|
srnbxti1-xo3 thin film |
1 |
|
srtio 3 |
1 |
|
stability |
1 |
|
stacked gate dielectric |
1 |
|
stacked gate-dielectric |
1 |
|
stress effect |
1 |
|
subthreshold swing |
1 |
|
sulfur |
1 |
|
surface modification |
1 |
|
surface nitridation |
1 |
|
surface passivation |
1 |
|
surface recombination |
1 |
|
surface roughness |
1 |
|
surface-roughness scattering |
1 |
|
surfaces and interfaces and thin films |
1 |
|
ta2o5 |
1 |
|
tantalum oxide |
1 |
|
taon/geon |
1 |
|
tayon passivation layer |
1 |
|
tce oxidation |
1 |
|
temperature sensor |
1 |
|
temperature sensors |
1 |
|
temperature-sensing elements |
1 |
|
terms-dual interlayer |
1 |
|
thermal resistor |
1 |
|
thermal sensitivity |
1 |
|
thin film transistors |
1 |
|
thin-film transistor |
1 |
|
thin-film transistor (tft) |
1 |
|
thin-film transistor (tft). |
1 |
|
thin-film transistors (tfts) |
1 |
|
thin-films |
1 |
|
threshold-voltage shift |
1 |
|
top-gated transistors |
1 |
|
transient response |
1 |
|
transistors |
1 |
|
trench-gate |
1 |
|
trichloroethylene |
1 |
|
tunability |
1 |
|
tunable capacitor |
1 |
|
tungsten oxide |
1 |
|
two-dimensional model |
1 |
|
two‐dimensional electron gas |
1 |
|
ultra-thin-body |
1 |
|
ultrasonic transducers |
1 |
|
ultraviolet msm photodetector |
1 |
|
urbach energy |
1 |
|
xps |
1 |
|
y doping |
1 |
|
yalo x |
1 |
|
zinc oxide |
1 |
|
zno |
1 |
|
zr incorporation |
1 |
|
α-igzo |
1 |
