Browsing by Author Zheng, LX

Jump to: 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z 中
Showing results 1 to 16 of 16
TitleAuthor(s)Issue Date
 
Adsorption and desorption kinetics of gallium atoms on 6H-SiC(0001) surfaces
Journal:Physical Review B (Condensed Matter)
Zheng, LXXie, MHTong, SY
2000
 
Anisotropic step-flow growth and island growth of GaN(0001) by molecular beam epitaxy
Journal:Physical Review Letters
Xie, MHSeutter, SMZhu, WKZheng, LXWu, HTong, SY
1999
 
Beyond Spatial Correlation Effect in Micro-Raman Light Scattering: An Example of Zinc-blende GaN/GaAs Hetero-interface
Journal:Journal of Applied Physics
Ning, JZheng, CZheng, LXXu, S
2015
 
Comparative study on the broadening of exciton luminescence linewidth due to phonon in zinc-blende and wurtzite GaN epilayers
Journal:Applied Physics Letters
Xu, SJZheng, LXCheung, SHXie, MHTong, SYYang, H
2002
 
Current-induced migration of surface adatoms during GaN growth by molecular beam epitaxy
Journal:Journal of Crystal Growth
Zheng, LXXie, MHXu, SJCheung, SHTong, SY
2001
 
Defect States in Cubic GaN Epilayer Grown on GaAs by Metalorganic Vapor Phase Epitaxy
Journal:Physica Status Solidi (A) Applied Research
Xu, SJOr, CTLi, QZheng, LXXie, MHTong, YYang, H
2001
 
Direct observation of a Ga adlayer on a GaN(0001) surface by LEED Patterson inversion
Journal:Physical Review B (Condensed Matter)
Xu, SHWu, HDai, XQLau, WPZheng, LXXie, MHTong, SY
2003
 
Evidence for a Type-II band alignment between cubic and hexagonal phases of GaN
Journal:Applied Physics Letters
Lu, XHYu, PYZheng, LXXu, SJXie, MHTong, SY
2003
 
Growth and structural properties of GaN films on flat and vicinal SiC(0001) substrates
Journal:International Journal of Modern Physics B
Xie, MHCheung, SHZheng, LXTong, SYZhang, BSYang, H
2002
 
Initial stage of GaN growth and its implication to defect formation in films
Journal:Physical Review B (Condensed Matter)
Cheung, SHZheng, LXXie, MHTong, SYOhtani, N
2001
 
A model for GaN 'ghost' islands
Journal:Surface Science
Xie, MHZheng, LXDai, XQWu, HSTong, SY
2004
 
Observation of 'ghost' islands and surfactant effect of surface gallium atoms during GaN growth by molecular beam epitaxy
Journal:Physical Review Letters
Zheng, LXXie, MHSeutter, SMCheung, SHTong, SY
2000
 
Reduction of threading defects in GaN grown on vicinal SiC(0001) by molecular-beam epitaxy
Journal:Applied Physics Letters
Xie, MHZheng, LXCheung, SHNg, YFWu, HTong, SYOhtani, N
2000
 
Reflection high-energy electron diffraction intensity oscillations during growth of GaN(0001)A by plasma-assisted molecular beam epitaxy
Journal:Surface Science
Seutter, SMXie, MHZhu, WKZheng, LXWu, HSTong, SY
2000
 
Step bunching of vicinal GaN(0001) surfaces during molecular beam epitaxy
Journal:Physical Review B (Condensed Matter)
Xie, MHCheung, SHZheng, LXNg, YFWu, HOhtani, NTong, SY
2000
 
Surface morphology of GaN: Flat versus vicinal surfaces
Proceeding/Conference:Materials Research Society Symposium - Proceedings
Xie, MHSeutter, SMZheng, LXCheung, SHNg, YFWu, HuashengTong, SY
2000
Showing results 1 to 16 of 16