Showing results 1 to 6 of 6
Title | Author(s) | Issue Date | |
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Dynamic Gate Breakdown of p-Gate GaN HEMTs in Inductive Power Switching Journal:IEEE Electron Device Letters | 2023 | ||
Gate Lifetime of P-Gate GaN HEMT in Inductive Power Switching Proceeding/Conference:Proceedings of the International Symposium on Power Semiconductor Devices and ICs | 2023 | ||
Gate Robustness and Reliability of P-Gate GaN HEMT Evaluated by a Circuit Method Journal:IEEE Transactions on Power Electronics | 2024 | ||
Numerical Simulation and Analytical Modeling of Multichannel AlGaN/GaN Devices Journal:IEEE Transactions on Electron Devices | 2024 | ||
Switching Performance Analysis of Vertical GaN FinFETs: Impact of Interfin Designs Journal:IEEE Journal of Emerging and Selected Topics in Power Electronics | 2021 | ||
Switching performance evaluation of 1200 v vertical GaN power FinFETs Proceeding/Conference:2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2019 | 2019 |