Showing results 1 to 2 of 2
| Title | Author(s) | Issue Date | |
|---|---|---|---|
Demonstrating the ICeGaN integrated power HEMT approach towards extreme gate robustness Proceeding/Conference:Proceedings of the International Semiconductor Conference, CAS | 2023 | ||
Multi-Channel Monolithic-Cascode HEMT (MC<sup>2</sup>-HEMT): A New GaN Power Switch up to 10 kV Proceeding/Conference:Technical Digest - International Electron Devices Meeting, IEDM | 2021 |