Showing results 1 to 2 of 2
| Title | Author(s) | Issue Date | |
|---|---|---|---|
| 28-Sep-2023 | |||
Improved Performance of HfxZnyO‐Based RRAM and its Switching Characteristics down to 4 K Temperature Journal:Advanced Electronic Materials | 29-Jan-2023 |
| Title | Author(s) | Issue Date | |
|---|---|---|---|
| 28-Sep-2023 | |||
Improved Performance of HfxZnyO‐Based RRAM and its Switching Characteristics down to 4 K Temperature Journal:Advanced Electronic Materials | 29-Jan-2023 |