Improved Performance of HfxZnyO‐Based RRAM and its Switching Characteristics down to 4 K Temperature

Abstract

<p>The search for high-performance resistive random-access memory (RRAM) devices is essential to pave the way for highly efficient non-Von Neumann computing architecture. Here, it is reported on an alloying approach using atomic layer deposition for a Zn-doped HfO_x-based resistive random-access memory (HfZnO RRAM), with improved performance. As compared with HfO_x RRAM, the HfZnO RRAM exhibits reduced switching voltages (>20%) and switching energy (>3×), as well as better uniformity both in voltages and resistance states. Furthermore, the HfZnO RRAM exhibits stable retention exceeding 10 years, as well as write/erase endurance exceeding 10⁵ cycles. In addition, excellent linearity and repeatability of conductance tuning can be achieved using the constant voltage pulse scheme, achieving ≈90% accuracy in a simulated multi-layer perceptron network for the recognition of modified national institute of standards and technology database handwriting. The HfZnO RRAM is also characterized down to the temperature of 4 K, showing functionality and the elucidation of its carrier conduction mechanism. Hence, a potential pathway for doped-RRAM to be used in a wide range of temperatures including quantum computing and deep-space exploration is shown.<br></p>