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Article: Improved Performance of HfxZnyO‐Based RRAM and its Switching Characteristics down to 4 K Temperature

TitleImproved Performance of HfxZnyO‐Based RRAM and its Switching Characteristics down to 4 K Temperature
Authors
Keywords4 K
cryogenic
hafnium oxide
resistive random-access memory (RRAM)
resistive switching
zinc
Issue Date29-Jan-2023
PublisherWiley Open Access
Citation
Advanced Electronic Materials, 2023, v. 9, n. 3 How to Cite?
Abstract

The search for high-performance resistive random-access memory (RRAM) devices is essential to pave the way for highly efficient non-Von Neumann computing architecture. Here, it is reported on an alloying approach using atomic layer deposition for a Zn-doped HfOx-based resistive random-access memory (HfZnO RRAM), with improved performance. As compared with HfOx RRAM, the HfZnO RRAM exhibits reduced switching voltages (>20%) and switching energy (>3×), as well as better uniformity both in voltages and resistance states. Furthermore, the HfZnO RRAM exhibits stable retention exceeding 10 years, as well as write/erase endurance exceeding 105 cycles. In addition, excellent linearity and repeatability of conductance tuning can be achieved using the constant voltage pulse scheme, achieving ≈90% accuracy in a simulated multi-layer perceptron network for the recognition of modified national institute of standards and technology database handwriting. The HfZnO RRAM is also characterized down to the temperature of 4 K, showing functionality and the elucidation of its carrier conduction mechanism. Hence, a potential pathway for doped-RRAM to be used in a wide range of temperatures including quantum computing and deep-space exploration is shown.


Persistent Identifierhttp://hdl.handle.net/10722/337551
ISSN
2023 Impact Factor: 5.3
2023 SCImago Journal Rankings: 1.689
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorLan, Jun-
dc.contributor.authorLi, Zhixiong-
dc.contributor.authorChen, Zhenjie-
dc.contributor.authorZhu, Quanzhou-
dc.contributor.authorWang, Wenhui-
dc.contributor.authorZaheer, Muhammad-
dc.contributor.authorLu, Jiqing-
dc.contributor.authorLiang, Jinxuan-
dc.contributor.authorShen, Mei-
dc.contributor.authorChen, Peng-
dc.contributor.authorChen, Kai-
dc.contributor.authorZhang, Guobiao-
dc.contributor.authorWang, Zhongrui-
dc.contributor.authorZhou, Feichi-
dc.contributor.authorLin, Longyang-
dc.contributor.authorLi, Yida -
dc.date.accessioned2024-03-11T10:21:46Z-
dc.date.available2024-03-11T10:21:46Z-
dc.date.issued2023-01-29-
dc.identifier.citationAdvanced Electronic Materials, 2023, v. 9, n. 3-
dc.identifier.issn2199-160X-
dc.identifier.urihttp://hdl.handle.net/10722/337551-
dc.description.abstract<p>The search for high-performance resistive random-access memory (RRAM) devices is essential to pave the way for highly efficient non-Von Neumann computing architecture. Here, it is reported on an alloying approach using atomic layer deposition for a Zn-doped HfO<sub>x</sub>-based resistive random-access memory (HfZnO RRAM), with improved performance. As compared with HfO<sub>x</sub> RRAM, the HfZnO RRAM exhibits reduced switching voltages (>20%) and switching energy (>3×), as well as better uniformity both in voltages and resistance states. Furthermore, the HfZnO RRAM exhibits stable retention exceeding 10 years, as well as write/erase endurance exceeding 10<sup>5</sup> cycles. In addition, excellent linearity and repeatability of conductance tuning can be achieved using the constant voltage pulse scheme, achieving ≈90% accuracy in a simulated multi-layer perceptron network for the recognition of modified national institute of standards and technology database handwriting. The HfZnO RRAM is also characterized down to the temperature of 4 K, showing functionality and the elucidation of its carrier conduction mechanism. Hence, a potential pathway for doped-RRAM to be used in a wide range of temperatures including quantum computing and deep-space exploration is shown.<br></p>-
dc.languageeng-
dc.publisherWiley Open Access-
dc.relation.ispartofAdvanced Electronic Materials-
dc.rightsThis work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.-
dc.subject4 K-
dc.subjectcryogenic-
dc.subjecthafnium oxide-
dc.subjectresistive random-access memory (RRAM)-
dc.subjectresistive switching-
dc.subjectzinc-
dc.titleImproved Performance of HfxZnyO‐Based RRAM and its Switching Characteristics down to 4 K Temperature-
dc.typeArticle-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1002/aelm.202201250-
dc.identifier.scopuseid_2-s2.0-85146954897-
dc.identifier.volume9-
dc.identifier.issue3-
dc.identifier.eissn2199-160X-
dc.identifier.isiWOS:000921342700001-
dc.identifier.issnl2199-160X-

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