Showing results 1 to 2 of 2
| Title | Author(s) | Issue Date | |
|---|---|---|---|
Analysis of silicon dioxide interface transition region in MOS structures Proceeding/Conference:2007 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007 | 2007 | ||
On the sub-nm EOT scaling of high-κ gate stacks Proceeding/Conference:ULIS 2008 - 9th International Conference on ULtimate Integration of Silicon | 2008 |