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Title	Author(s)	Issue Date
1 kV GaN-on-Si Quasi-Vertical Schottky Rectifier Journal:IEEE Electron Device Letters	Qin, Yuan Xiao, Ming Zhang, Ruizhe Xie, Qingyun Palacios, Tomas Wang, Boyan Ma, Yunwei Kravchenko, Ivan Briggs, Dayrl P.Hensley, Dale K.Srijanto, Bernadeta R.Zhang, Yuhao	2023
1 kV Self-Aligned Vertical GaN Superjunction Diode Journal:IEEE Electron Device Letters	Ma, Yunwei Porter, Matthew Qin, Yuan Spencer, Joseph Du, Zhonghao Xiao, Ming Wang, Yifan Kravchenko, Ivan Briggs, Dayrl P.Hensley, Dale K.Udrea, Florin Tadjer, Marko Wang, Han Zhang, Yuhao	2024
10 kV GaN Power Diodes and Transistors with Performance beyond SiC Limit Proceeding/Conference:6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022	Zhang, Yuhao Xiao, Ming Ma, Yunwei Cheng, Kai	2022
10 kV, 39 mΩ·cm<sup>2</sup>Multi-Channel AlGaN/GaN Schottky Barrier Diodes Journal:IEEE Electron Device Letters	Xiao, Ming Ma, Yunwei Liu, Kai Cheng, Kai Zhang, Yuhao	2021
10-kV Ga<inf>2</inf>O<inf>3</inf>Charge-Balance Schottky Rectifier Operational at 200 °C Journal:IEEE Electron Device Letters	Qin, Yuan Xiao, Ming Porter, Matthew Ma, Yunwei Spencer, Joseph Du, Zhonghao Jacobs, Alan G.Sasaki, Kohei Wang, Han Tadjer, Marko Zhang, Yuhao	2023
2 kV, 0.7 mO•cm<sup>2</sup> Vertical Ga<inf>2</inf>O<inf>3</inf> Superjunction Schottky Rectifier with Dynamic Robustness Proceeding/Conference:Technical Digest - International Electron Devices Meeting, IEDM	Qin, Yuan Porter, Matthew Xiao, Ming Du, Zhonghao Zhang, Hongming Ma, Yunwei Spencer, Joseph Wang, Boyan Song, Qihao Sasaki, Kohei Lin, Chia Hung Kravchenko, Ivan Briggs, Dayrl P.Hensley, Dale K.Tadjer, Marko Wang, Han Zhang, Yuhao	2023
3.3 kV Multi-Channel AlGaN/GaN Schottky Barrier Diodes with P-GaN Termination Journal:IEEE Electron Device Letters	Xiao, Ming Ma, Yunwei Cheng, Kai Liu, Kai Xie, Andy Beam, Edward Cao, Yu Zhang, Yuhao	2020
Activating Thick Buried p-GaN for Device Applications Journal:IEEE Transactions on Electron Devices	Ma, Yunwei Xiao, Ming Du, Zhonghao Wang, Lei Carlson, Eric Guido, Louis Wang, Han Wang, Lai Luo, Yi Zhang, Yuhao	2022
An avalanche-and-surge robust ultrawide-bandgap heterojunction for power electronics Journal:Nature Communications	Zhou, Feng Gong, Hehe Xiao, Ming Ma, Yunwei Wang, Zhengpeng Yu, Xinxin Li, Li Fu, Lan Tan, Hark Hoe Yang, Yi Ren, Fang Fang Gu, Shulin Zheng, Youdou Lu, Hai Zhang, Rong Zhang, Yuhao Ye, Jiandong	2023
Breakdown Voltage and Leakage Current of the Nonuniformly Activated Lightly Doped p-GaN Journal:IEEE Transactions on Electron Devices	Yang, Zineng Ma, Yunwei Porter, Matthew Gong, Hehe Du, Zhonghao Wang, Han Luo, Yi Wang, Lai Zhang, Yuhao	2024
Degradation and Recovery of GaN HEMTs in Overvoltage Hard Switching Near Breakdown Voltage Journal:IEEE Transactions on Power Electronics	Kozak, Joseph P.Song, Qihao Zhang, Ruizhe Ma, Yunwei Liu, Jingcun Li, Qiang Saito, Wataru Zhang, Yuhao	2023
Evaluation of 650V, 100A Direct-Drive GaN Power Switch for Electric Vehicle Powertrain Applications Proceeding/Conference:2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2021 - Proceedings	Song, Qihao Kozak, Joseph P.Xiao, Ming Ma, Yunwei Wang, Boyan Zhang, Ruizhe Volkov, Roman Smith, Kurt Baksht, Tamara Zhang, Yuhao	2021
First Demonstration of Vertical Superjunction Diode in GaN Proceeding/Conference:Technical Digest - International Electron Devices Meeting, IEDM	Xiao, Ming Ma, Yunwei Du, Zhonghao Qin, Yuan Liu, Kai Cheng, Kai Udrea, Florin Xie, Andy Beam, Edward Wang, Boyan Spencer, Joseph Tadjer, Marko Anderson, Travis Wang, Han Zhang, Yuhao	2022
GaN FinFETs and trigate devices for power and RF applications: Review and perspective Journal:Semiconductor Science and Technology	Zhang, Yuhao Zubair, Ahmad Liu, Zhihong Xiao, Ming Perozek, Joshua Ma, Yunwei Palacios, Tomás	2021
GaN MIS-HEMTs in Repetitive Overvoltage Switching: Parametric Shift and Recovery Proceeding/Conference:IEEE International Reliability Physics Symposium Proceedings	Song, Qihao Kozak, Joseph P.Ma, Yunwei Liu, Jingcun Zhang, Ruizhe Volkov, Roman Sherman, Daniel Smith, Kurt V.Saito, Wataru Zhang, Yuhao	2022
(Invited) Multi-Channel AlGaN/GaN Power Rectifiers: Breakthrough Performance up to 10 kV Proceeding/Conference:ECS Transactions	Zhang, Yuhao Xiao, Ming Ma, Yunwei Du, Zhonghao Wang, Han Xie, Andy Beam, Edward Cao, Yu Cheng, Kai	2021
Kilovolt Tri-Gate GaN Junction HEMTs with High Thermal Stability Proceeding/Conference:Proceedings of the International Symposium on Power Semiconductor Devices and ICs	Ma, Yunwei Xiao, Ming Zhang, Yuhao Du, Zhonghao Yan, Xiaodong Wang, Han Cheng, Kai Clavel, Michael Hudait, Mantu K.Tao, Lei Lin, Feng Kravchenko, Ivan	2021
NiO junction termination extension for high-voltage (>3 kV) Ga<inf>2</inf>O<inf>3</inf> devices Journal:Applied Physics Letters	Xiao, Ming Wang, Boyan Spencer, Joseph Qin, Yuan Porter, Matthew Ma, Yunwei Wang, Yifan Sasaki, Kohei Tadjer, Marko Zhang, Yuhao	2023
P-Type Doping Control of Magnetron Sputtered NiO for High Voltage UWBG Device Structures Proceeding/Conference:2023 IEEE 10th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2023	Porter, Matthew A.Ma, Yunwei Qin, Yuan Zhang, Yuhao	2023
Superjunction Power Transistors with Interface Charges: A Case Study for GaN Journal:IEEE Journal of the Electron Devices Society	Ma, Yunwei Xiao, Ming Zhang, Ruizhe Wang, Han Zhang, Yuhao	2020

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