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Showing results 1 to 5 of 5

	Title	Author(s)	Issue Date
	Electrical and Interfacial Properties of GaAs MOS Capacitors With La-Doped ZrON as Interfacial Passivation Layer Journal:IEEE Transactions on Electron Devices	Lu, HH Xu, JP Liu, L Lai, PT Tang, WM	2017
	Improved Interfacial and Electrical Properties of GaAs Metal–Oxide–Semiconductor Capacitor by Using Fluorine-Plasma-Treated Interfacial Passivation Layer Journal:IEEE Transactions on Device and Materials Reliability	Lu, HH Xu, JP Liu, L Lai, PT Tang, WM	2017
	Improved Interfacial and Electrical Properties of GaAs MOS Capacitor With LaON/TiON Multilayer Composite Gate Dielectric and LaON as Interfacial Passivation Layer Journal:IEEE Transactions on Electron Devices	Lu, HH Liu, L Xu, JP Lai, PT Tang, WM	2017
	Improved interfacial quality of GaAs metal-oxide-semiconductor device with NH 3 -plasma treated yittrium-oxynitride as interfacial passivation layer Journal:Microelectronics Reliability	Lu, HH Xu, JP Liu, L Wang, LS Lai, PT Tang, WM	2016
	Interfacial and electrical properties of InGaAs metal-oxide-semiconductor capacitor with TiON/TaON multilayer composite gate dielectric Journal:Applied Physics Letters	Wang, LS Xu, JP Liu, L Lu, HH Lai, PT Tang, WM	2015

Showing results 1 to 5 of 5