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Showing results 1 to 8 of 8

	Title	Author(s)	Issue Date
	1.1 A/mm ß-Ga<inf>2</inf>O<inf>3</inf>-on-SiC RF MOSFETs with 2.3 W/mm P<inf>out</inf> and 30% PAE at 2 GHz and f<inf>T</inf>/f<inf>max</inf> of 27.6/57 GHz Proceeding/Conference:Technical Digest - International Electron Devices Meeting, IEDM	Zhou, Min Zhou, Hong Huang, Sen Si, Mengwei Zhang, Yuhao Luan, Tiantian Yue, Hongqing Dang, Kui Wang, Chenlu Liu, Zhihong Zhang, Jincheng Hao, Yue	2023
	71 GHz-f<inf>max</inf> β-Ga<inf>2</inf>O<inf>3</inf>-on-SiC RF Power MOSFETs with Record P<inf>out</inf>=3.1 W/mm and PAE=50.8% at 2 GHz, P<inf>out</inf>= 2.3 W/mm at 4 GHz, and Low Microwave Noise Figure Proceeding/Conference:Digest of Technical Papers - Symposium on VLSI Technology	Zhou, Min Zhou, Hong Mengwei, S.Gao, Guangjie Chen, Xiaojin Zhu, Xiaoxiao Dang, Kui Peijun, M.Xiaohua, M.Zheng, Xuefeng Liu, Zhihong Zhang, Jincheng Zhang, Yuhao Hao, Yue	2024
	Electrothermal simulation and thermal performance study of GaN vertical and lateral power transistors Journal:IEEE Transactions on Electron Devices	Zhang, Yuhao Sun, Min Liu, Zhihong Piedra, Daniel Lee, Hyung Seok Gao, Feng Fujishima, Tatsuya Palacios, Tomas	2013
	GaN FinFETs and trigate devices for power and RF applications: Review and perspective Journal:Semiconductor Science and Technology	Zhang, Yuhao Zubair, Ahmad Liu, Zhihong Xiao, Ming Perozek, Joshua Ma, Yunwei Palacios, Tomás	2021
	Large-Area 1.2-kV GaN vertical power FinFETs with a record switching figure of merit Journal:IEEE Electron Device Letters	Zhang, Yuhao Sun, Min Perozek, Josh Liu, Zhihong Zubair, Ahmad Piedra, Daniel Chowdhury, Nadim Gao, Xiang Shepard, Kenneth Palacios, Tomas	2019
	Multiplexed bulk and single-cell RNA-seq hybrid enables cost-efficient disease modeling with chimeric organoids Journal:Nature Communications	Cheng, Chen Wang, Gang Zhu, Yuqing Wu, Hangdi Zhang, Li Liu, Zhihong Huang, Yuanhua Zhang, Jin	1-Dec-2024
	Trench formation and corner rounding in vertical GaN power devices Journal:Applied Physics Letters	Zhang, Yuhao Sun, Min Liu, Zhihong Piedra, Daniel Hu, Jie Gao, Xiang Palacios, Tomás	2017
	Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation Journal:IEEE Electron Device Letters	Zhang, Yuhao Liu, Zhihong Tadjer, Marko J.Sun, Min Piedra, Daniel Hatem, Christopher Anderson, Travis J.Luna, Lunet E.Nath, Anindya Koehler, Andrew D.Okumura, Hironori Hu, Jie Zhang, Xu Gao, Xiang Feigelson, Boris N.Hobart, Karl D.Palacios, Tómas	2017

Showing results 1 to 8 of 8