Showing results 1 to 3 of 3
| Title | Author(s) | Issue Date | |
|---|---|---|---|
Growth and characteristics of La 2 O 3 gate dielectric prepared by low pressure metalorganic chemical vapor deposition Journal:Applied Surface Science | 2004 | ||
Growth and characterization of Al2O3 gate dielectric films by low-pressure metalorganic chemical vapor deposition Proceeding/Conference:Microelectronic Engineering | 2003 | ||
| 2002 |