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Article: SrBi4Ti4O15 thin films and their ferroelectric fatigue behaviors under varying switching pulse widths and frequencies

TitleSrBi<inf>4</inf>Ti<inf>4</inf>O<inf>15</inf> thin films and their ferroelectric fatigue behaviors under varying switching pulse widths and frequencies
Authors
Issue Date2002
Citation
Journal of Applied Physics, 2002, v. 91, n. 5, p. 3160-3164 How to Cite?
AbstractPolycrystalline ferroelectric SrBi4Ti4O15 thin films were prepared on Pt-coated silicon substrates by pulsed laser deposition. Structures of the films were analyzed by x-ray diffraction, atomic force microscopy (AFM) and scanning electron microscopy. At an applied field of 275 kV/cm, the films showed good hysteresis loops with remnant polarization (Pr), saturated polarization (Ps) and coercive field (Ec) of 3.11 μC/cm2, 7.81 μC/cm2 and 68 kV/cm, respectively. At 120 kV/cm switching pulse field, fatigue tests were carried out systematically by varying the switching pulsewidth with a fixed duty cycle and with a fixed switching period, respectively. A gradual increase followed by an abrupt increase of the fatigue rate was observed with the increase of the switching pulsewidth. Field-induced defect diffusion was used to explain the results. © 2002 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/310360
ISSN
2023 Impact Factor: 2.7
2023 SCImago Journal Rankings: 0.649
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorZhang, Shan Tao-
dc.contributor.authorYang, Bin-
dc.contributor.authorChen, Yan Feng-
dc.contributor.authorLiu, Zhi Guo-
dc.contributor.authorYin, Xiao Bo-
dc.contributor.authorWang, Yuan-
dc.contributor.authorWang, Mu-
dc.contributor.authorMing, Nai Ben-
dc.date.accessioned2022-01-31T06:04:41Z-
dc.date.available2022-01-31T06:04:41Z-
dc.date.issued2002-
dc.identifier.citationJournal of Applied Physics, 2002, v. 91, n. 5, p. 3160-3164-
dc.identifier.issn0021-8979-
dc.identifier.urihttp://hdl.handle.net/10722/310360-
dc.description.abstractPolycrystalline ferroelectric SrBi4Ti4O15 thin films were prepared on Pt-coated silicon substrates by pulsed laser deposition. Structures of the films were analyzed by x-ray diffraction, atomic force microscopy (AFM) and scanning electron microscopy. At an applied field of 275 kV/cm, the films showed good hysteresis loops with remnant polarization (Pr), saturated polarization (Ps) and coercive field (Ec) of 3.11 μC/cm2, 7.81 μC/cm2 and 68 kV/cm, respectively. At 120 kV/cm switching pulse field, fatigue tests were carried out systematically by varying the switching pulsewidth with a fixed duty cycle and with a fixed switching period, respectively. A gradual increase followed by an abrupt increase of the fatigue rate was observed with the increase of the switching pulsewidth. Field-induced defect diffusion was used to explain the results. © 2002 American Institute of Physics.-
dc.languageeng-
dc.relation.ispartofJournal of Applied Physics-
dc.titleSrBi<inf>4</inf>Ti<inf>4</inf>O<inf>15</inf> thin films and their ferroelectric fatigue behaviors under varying switching pulse widths and frequencies-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1063/1.1435414-
dc.identifier.scopuseid_2-s2.0-33845456326-
dc.identifier.volume91-
dc.identifier.issue5-
dc.identifier.spage3160-
dc.identifier.epage3164-
dc.identifier.isiWOS:000174182400092-

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