Showing results 1 to 3 of 3
| Title | Author(s) | Issue Date | |
|---|---|---|---|
Correlations between reverse bias leakage current, cathodoluminescence intensity and carbon vacancy observed in 4H-SiC junction barrier Schottky diode Journal:Semiconductor Science and Technology | 1-Nov-2023 | ||
| 2024 | |||
Resolving emission rates from overlapping capacitance transients of deep levels in SiC Journal:Journal of Physics D: Applied Physics | 3-Mar-2025 |