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Article: Correlations between reverse bias leakage current, cathodoluminescence intensity and carbon vacancy observed in 4H-SiC junction barrier Schottky diode
Title | Correlations between reverse bias leakage current, cathodoluminescence intensity and carbon vacancy observed in 4H-SiC junction barrier Schottky diode |
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Authors | |
Keywords | cathodoluminescence defect leakage current |
Issue Date | 1-Nov-2023 |
Publisher | IOP Publishing |
Citation | Semiconductor Science and Technology, 2023, v. 38, n. 11, p. 1-5 How to Cite? |
Abstract | Reverse bias currents of ten commercial junction barrier Schottky diodes were measured, and the dies were studied by scanning electron microscope (SEM) and cathodoluminescence (CL) after the de-capsulation of the diodes. Defect emissions (DEs) of 2.62 eV were observed in all the CL spectra. By comparing the SEM images, the integral CL intensity spatial mappings and the reverse bias leakage currents, correlations between the leakage current, the integral CL intensity and the Al-implantation process were established. The data of reverse bias leakage current against the reverse bias voltage taken at room temperature followed the Poole Frenkel emission from the Z 1/Z 2 carbon vacancy states to the conduction band. The DE at 2.62 eV is associated with the electronic transition from Z 1/Z 2 to the valence band. The current observation also opens up the feasibility of screening off SiC diodes with large leakage current during production by inspecting the CL intensity before the device fabrication is complete. |
Persistent Identifier | http://hdl.handle.net/10722/347476 |
ISSN | 2023 Impact Factor: 1.9 2023 SCImago Journal Rankings: 0.411 |
DC Field | Value | Language |
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dc.contributor.author | Ho, Lok Ping | - |
dc.contributor.author | Li, Si Hua | - |
dc.contributor.author | Lin, Tianxiang | - |
dc.contributor.author | Cheung, Jack | - |
dc.contributor.author | Chau, Tony | - |
dc.contributor.author | Ling, Francis Chi Chung | - |
dc.date.accessioned | 2024-09-23T03:11:16Z | - |
dc.date.available | 2024-09-23T03:11:16Z | - |
dc.date.issued | 2023-11-01 | - |
dc.identifier.citation | Semiconductor Science and Technology, 2023, v. 38, n. 11, p. 1-5 | - |
dc.identifier.issn | 0268-1242 | - |
dc.identifier.uri | http://hdl.handle.net/10722/347476 | - |
dc.description.abstract | Reverse bias currents of ten commercial junction barrier Schottky diodes were measured, and the dies were studied by scanning electron microscope (SEM) and cathodoluminescence (CL) after the de-capsulation of the diodes. Defect emissions (DEs) of 2.62 eV were observed in all the CL spectra. By comparing the SEM images, the integral CL intensity spatial mappings and the reverse bias leakage currents, correlations between the leakage current, the integral CL intensity and the Al-implantation process were established. The data of reverse bias leakage current against the reverse bias voltage taken at room temperature followed the Poole Frenkel emission from the Z 1/Z 2 carbon vacancy states to the conduction band. The DE at 2.62 eV is associated with the electronic transition from Z 1/Z 2 to the valence band. The current observation also opens up the feasibility of screening off SiC diodes with large leakage current during production by inspecting the CL intensity before the device fabrication is complete. | - |
dc.language | eng | - |
dc.publisher | IOP Publishing | - |
dc.relation.ispartof | Semiconductor Science and Technology | - |
dc.rights | This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License. | - |
dc.subject | cathodoluminescence | - |
dc.subject | defect | - |
dc.subject | leakage current | - |
dc.title | Correlations between reverse bias leakage current, cathodoluminescence intensity and carbon vacancy observed in 4H-SiC junction barrier Schottky diode | - |
dc.type | Article | - |
dc.description.nature | published_or_final_version | - |
dc.identifier.doi | 10.1088/1361-6641/acfb32 | - |
dc.identifier.scopus | eid_2-s2.0-85182270916 | - |
dc.identifier.volume | 38 | - |
dc.identifier.issue | 11 | - |
dc.identifier.spage | 1 | - |
dc.identifier.epage | 5 | - |
dc.identifier.eissn | 1361-6641 | - |
dc.identifier.issnl | 0268-1242 | - |