Showing results 1 to 2 of 2
| Title | Author(s) | Issue Date | |
|---|---|---|---|
Demonstration of 40-nm Channel Length Top-Gate p-MOSFET of WS<inf>2</inf> Channel Directly Grown on SiO<inf>x</inf>/Si Substrates Using Area-Selective CVD Technology Journal:IEEE Transactions on Electron Devices | 2019 | ||
First demonstration of 40-nm channel length top-gate WS<inf>2</inf> pFET using channel area-selective CVD growth directly on SiO<inf>x</inf>/Si substrate Proceeding/Conference:Digest of Technical Papers - Symposium on VLSI Technology | 2019 |