Showing results 1 to 4 of 4
Title | Author(s) | Issue Date | |
---|---|---|---|
245-GHz InAlN/GaN HEMTs with oxygen plasma treatment Journal:IEEE Electron Device Letters | 2011 | ||
Delay analysis of graphene field-effect transistors Journal:IEEE Electron Device Letters | 2012 | ||
High linearity nanowire channel GaN HEMTs Proceeding/Conference:Device Research Conference - Conference Digest, DRC | 2013 | ||
Nanowire channel InAlN/GaN HEMTs with high linearity of g<inf>m</inf> and f<inf>T</inf> Journal:IEEE Electron Device Letters | 2013 |