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- Publisher Website: 10.1109/LED.2011.2132751
- Scopus: eid_2-s2.0-79957611892
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Article: 245-GHz InAlN/GaN HEMTs with oxygen plasma treatment
Title | 245-GHz InAlN/GaN HEMTs with oxygen plasma treatment |
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Authors | |
Keywords | AlN current gain cutoff frequency (f ) T GaN high-electron-mobility transistor (HEMT) InAlN oxygen plasma transconductance (g ) m |
Issue Date | 2011 |
Citation | IEEE Electron Device Letters, 2011, v. 32, n. 6, p. 755-757 How to Cite? |
Abstract | We report lattice-matched In0.17Al0.83N/GaN high-electron mobility transistors on a SiC substrate with a record current gain cutoff frequency (fT). The key to this performance is the use of an oxygen plasma treatment to form a thin oxide layer on the InAlN barrier and to reduce the gate leakage current by more than two orders of magnitude. In addition, the RF transconductance (gm) collapse is reduced in the O2-treated devices, which results in a significant improvement in the fT. In a transistor with a gate length of 30 nm, an fT of 245 GHz is achieved, the highest value ever reported in GaN-based field-effect transistors. © 2011 IEEE. |
Persistent Identifier | http://hdl.handle.net/10722/335208 |
ISSN | 2023 Impact Factor: 4.1 2023 SCImago Journal Rankings: 1.250 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Lee, Dong Seup | - |
dc.contributor.author | Chung, Jinwook W. | - |
dc.contributor.author | Wang, Han | - |
dc.contributor.author | Gao, Xiang | - |
dc.contributor.author | Guo, Shiping | - |
dc.contributor.author | Fay, Patrick | - |
dc.contributor.author | Palacios, Toms | - |
dc.date.accessioned | 2023-11-17T08:23:57Z | - |
dc.date.available | 2023-11-17T08:23:57Z | - |
dc.date.issued | 2011 | - |
dc.identifier.citation | IEEE Electron Device Letters, 2011, v. 32, n. 6, p. 755-757 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | http://hdl.handle.net/10722/335208 | - |
dc.description.abstract | We report lattice-matched In0.17Al0.83N/GaN high-electron mobility transistors on a SiC substrate with a record current gain cutoff frequency (fT). The key to this performance is the use of an oxygen plasma treatment to form a thin oxide layer on the InAlN barrier and to reduce the gate leakage current by more than two orders of magnitude. In addition, the RF transconductance (gm) collapse is reduced in the O2-treated devices, which results in a significant improvement in the fT. In a transistor with a gate length of 30 nm, an fT of 245 GHz is achieved, the highest value ever reported in GaN-based field-effect transistors. © 2011 IEEE. | - |
dc.language | eng | - |
dc.relation.ispartof | IEEE Electron Device Letters | - |
dc.subject | AlN | - |
dc.subject | current gain cutoff frequency (f ) T | - |
dc.subject | GaN | - |
dc.subject | high-electron-mobility transistor (HEMT) | - |
dc.subject | InAlN | - |
dc.subject | oxygen plasma | - |
dc.subject | transconductance (g ) m | - |
dc.title | 245-GHz InAlN/GaN HEMTs with oxygen plasma treatment | - |
dc.type | Article | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1109/LED.2011.2132751 | - |
dc.identifier.scopus | eid_2-s2.0-79957611892 | - |
dc.identifier.volume | 32 | - |
dc.identifier.issue | 6 | - |
dc.identifier.spage | 755 | - |
dc.identifier.epage | 757 | - |
dc.identifier.isi | WOS:000290994800019 | - |