Showing results 1 to 4 of 4
| Title | Author(s) | Issue Date | |
|---|---|---|---|
1.1 A/mm ß-Ga<inf>2</inf>O<inf>3</inf>-on-SiC RF MOSFETs with 2.3 W/mm P<inf>out</inf> and 30% PAE at 2 GHz and f<inf>T</inf>/f<inf>max</inf> of 27.6/57 GHz Proceeding/Conference:Technical Digest - International Electron Devices Meeting, IEDM | 2023 | ||
71 GHz-f<inf>max</inf> β-Ga<inf>2</inf>O<inf>3</inf>-on-SiC RF Power MOSFETs with Record P<inf>out</inf>=3.1 W/mm and PAE=50.8% at 2 GHz, P<inf>out</inf>= 2.3 W/mm at 4 GHz, and Low Microwave Noise Figure Proceeding/Conference:Digest of Technical Papers - Symposium on VLSI Technology | 2024 | ||
First Demonstration of Waferscale Heterogeneous Integration of Ga<inf>2</inf>O<inf>3</inf> MOSFETs on SiC and Si Substrates by Ion-Cutting Process Proceeding/Conference:Technical Digest - International Electron Devices Meeting, IEDM | 2019 | ||
Novel 2000 v Normally-off MOS-HEMTs using AlN/GaN Superlattice Channel Proceeding/Conference:Proceedings of the International Symposium on Power Semiconductor Devices and ICs | 2019 |