Showing results 1 to 6 of 6
| Title | Author(s) | Issue Date | |
|---|---|---|---|
1.2-kV Vertical GaN Fin-JFETs: High-Temperature Characteristics and Avalanche Capability Journal:IEEE Transactions on Electron Devices | 2021 | ||
Breakthrough Short Circuit Robustness Demonstrated in Vertical GaN Fin JFET Journal:IEEE Transactions on Power Electronics | 2022 | ||
Robust Through-Fin Avalanche in Vertical GaN Fin-JFET with Soft Failure Mode Journal:IEEE Electron Device Letters | 2022 | ||
Surge Current and Avalanche Ruggedness of 1.2-kV Vertical GaN p-n Diodes Journal:IEEE Transactions on Power Electronics | 2021 | ||
Trap-Mediated Avalanche in Large-Area 1.2 kV Vertical GaN p-n Diodes Journal:IEEE Electron Device Letters | 2020 | ||
Tuning Avalanche Path in Vertical GaN JFETs By Gate Driver Design Journal:IEEE Transactions on Power Electronics | 2022 |