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Showing results 1 to 4 of 4

	Title	Author(s)	Issue Date
	Interfacial Reconstructed Layer Controls the Orientation of Monolayer Transition-Metal Dichalcogenides Journal:ACS Nano	Aljarb, A Min, JC Hakami, M Fu, JH Albaridy, R Wan, Y Lopatin, S Kaltsas, D Naphade, D Yengel, E Hedhili, MN Sait, R Emwas, AH Kutbee, A Alsabban, M Huang, KW Shih, KM Tsetseris, L Anthopoulos, TD Tung, VC Li, LJ	30-May-2023
	Temperature‐Dependent Electronic Ground‐State Charge Transfer in van der Waals Heterostructures Journal:Advanced Materials	Park, S Wang, H Schultz, T Shin, D Ovsyannikov, R Zacharias, M Maksimov, D Meissner, M Hasegawa, Y Yamaguchi, T Kera, S Aljarb, A Hakami, M Li, L Tung, V Amsalem, P Rossi, M Koch, N	2021
	The Schottky–Mott Rule Expanded for Two-Dimensional Semiconductors: Influence of Substrate Dielectric Screening Journal:ACS Nano	Park, S Schultz, T Shin, D Mutz, N Aljarb, A Kang, H Lee, C Li, L Xu, X Tung, V List, E Blumstengel, S Amsalem, S Koch, N	2021
	Van der Waals Heterostructures: Temperature‐Dependent Electronic Ground‐State Charge Transfer in van der Waals Heterostructures Journal:Advanced Materials	Park, S Wang, H Schultz, T Shin, D Ovsyannikov, R Zacharias, M Maksimov, D Meissner, M Hasegawa, Y Yamaguchi, T Kera, S Aljarb, A Hakami, M Li, L Tung, V Amsalem, P Rossi, M Koch, N	2021

Showing results 1 to 4 of 4