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Article: The Schottky–Mott Rule Expanded for Two-Dimensional Semiconductors: Influence of Substrate Dielectric Screening

TitleThe Schottky–Mott Rule Expanded for Two-Dimensional Semiconductors: Influence of Substrate Dielectric Screening
Authors
Issue Date2021
Citation
ACS Nano, 2021, v. 15, p. 14794-14803 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/315518
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorPark, S-
dc.contributor.authorSchultz, T-
dc.contributor.authorShin, D-
dc.contributor.authorMutz, N-
dc.contributor.authorAljarb, A-
dc.contributor.authorKang, H-
dc.contributor.authorLee, C-
dc.contributor.authorLi, L-
dc.contributor.authorXu, X-
dc.contributor.authorTung, V-
dc.contributor.authorList, E-
dc.contributor.authorBlumstengel, S-
dc.contributor.authorAmsalem, S-
dc.contributor.authorKoch, N-
dc.date.accessioned2022-08-19T08:59:24Z-
dc.date.available2022-08-19T08:59:24Z-
dc.date.issued2021-
dc.identifier.citationACS Nano, 2021, v. 15, p. 14794-14803-
dc.identifier.urihttp://hdl.handle.net/10722/315518-
dc.languageeng-
dc.relation.ispartofACS Nano-
dc.titleThe Schottky–Mott Rule Expanded for Two-Dimensional Semiconductors: Influence of Substrate Dielectric Screening-
dc.typeArticle-
dc.identifier.emailLi, L: lanceli1@hku.hk-
dc.identifier.authorityLi, L=rp02799-
dc.identifier.doi10.1021/acsnano.1c04825-
dc.identifier.hkuros335483-
dc.identifier.volume15-
dc.identifier.spage14794-
dc.identifier.epage14803-
dc.identifier.isiWOS:000703553600075-

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