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Browsing by Author Zhao, DG
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Showing results 3 to 16 of 16
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Title
Author(s)
Issue Date
Effects of Fe doping on the strain and optical properties of GaN epilayers grown on sapphire substrates
Journal:
RSC Advances
Zheng, C
Ning, J
Wu, Z
Wang, JF
Zhao, DG
Xu, K
Gao, J
Xu, S
2014
Influence of indium-tin-oxide thin-film quality on reverse leakage current of indium-tin-oxide/n-GaN Schottky contacts
Journal:
Applied Physics Letters
Wang, RX
Xu, SJ
Djurišić, AB
Beling, CD
Cheung, CK
Cheung, CH
Fung, S
Zhao, DG
Yang, H
Tao, XM
2006
Large Negative Thermal Quenching and Broadening Lineshape Analysis of Acceptor-Associated Yellow Luminescence in Si-Doped GaN
Journal:
The Journal of Physical Chemistry C
Wang, X
Zhao, DG
Ning, JQ
Yu, DP
Xu, S
2022
Luminescence imaging and blinking behavior of individual InGaN nanoclusters formed in GaN matrix
Proceeding/Conference:
Progress in Electromagnetics Research Symposium Abstracts
Xu, SJ
Zhao, DG
Yang, H
2010
Mineral chemistry of chromite from the Permian Jinbaoshan Pt-Pd-sulphide-bearing ultamafic intrusion in SW China with petrogenetic implications
Proceeding/Conference:
IGCP479 Hong Kong Workshop-Conference
Wang, CY
Zhou, MF
Zhao, DG
2004
Morphology and composition of a foreign iron fragment inside a human body
Proceeding/Conference:
The General Meeting of the International Mineralogical Association
Zhao, DG
Zhou, MF
2002
Non-exponential photoluminescence decay dynamics of localized carriers in disordered InGaN/GaN quantum wells: The role of localization length
Journal:
Optics Express
Wang, YJ
Xu, SJ
Zhao, DG
Zhu, JJ
Yang, H
Shan, XD
Yu, DP
2006
Optical properties of light-hole excitons in GaN epilayers
Journal:
Journal of Applied Physics
Zhang, F
Xu, SJ
Ning, JQ
Zheng, CC
Zhao, DG
Yang, H
Che, CM
2010
Petrogenetic significance of chromite from the Jinbaoshan Pt-Pd-sulphide-bearing ultramafic sill within the Emeishan Large Igneous Province, Yunnan, SW China
Proceeding/Conference:
Chinese Geo-conference
Wang, CY
Zhou, MF
Zhao, DG
2004
Probing deep level centers in GaN epilayers with variable-frequency capacitance-voltage characteristics of AuGaN Schottky contacts
Journal:
Applied Physics Letters
Wang, RX
Xu, SJ
Shi, SL
Beling, CD
Fung, S
Zhao, DG
Yang, H
Tao, XM
2006
Quantum dissipation and broadening mechanisms due to electron-phonon interactions in self-formed InGaN quantum dots
Journal:
Applied Physics Letters
Xu, SJ
Li, GQ
Wang, YJ
Zhao, Y
Chen, GH
Zhao, DG
Zhu, JJ
Yang, H
Yu, DP
Wang, JN
2006
Stress and its effect on optical properties of GaN epilayers grown on Si(111), 6H-SiC(0001), and c-plane sapphire
Journal:
Applied Physics Letters
Zhao, DG
Xu, SJ
Xie, MH
Tong, SY
Yang, H
2003
Temperature and pressure constraints on formation of mafic-ultramafic intrusions from the Emeishan large igneous province, SW China
Proceeding/Conference:
IGCP479 Hong Kong Workshop-Conference
Zhao, DG
Zhou, MF
Wang, CY
2004
Violet electroluminescence of AlInGaN-InGaN multiquantum-well light-emitting diodes: Quantum-confined stark effect and heating effect
Journal:
IEEE Photonics Technology Letters
Li, J
Shi, SL
Wang, YJ
Xu, SJ
Zhao, DG
Zhu, JJ
Yang, H
Lu, F
2007