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Conference Paper: Luminescence imaging and blinking behavior of individual InGaN nanoclusters formed in GaN matrix
Title | Luminescence imaging and blinking behavior of individual InGaN nanoclusters formed in GaN matrix |
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Authors | |
Issue Date | 2010 |
Publisher | Electromagnetics Academy. |
Citation | The 28th Progress In Electromagnetics Research Symposium Abstracts, Cambridge, USA, 5-8 July 2010. In PIERS 2010 in Cambridge Abstracts, p. 182 How to Cite? |
Abstract | In this talk, we report an observation of luminescence imaging and blinking behavior of single indium rich nanoclusters spontaneously formed inside GaN matrix. At room temperature, light emissions from individual nanoclusters have been spatially and spectrally detected using scanning confocal micro-Raman microscopy/spectroscopy system. Under the continuous excitation of continuous-wave laser, spectral jump and intensity intermittence of light emissions from these individual nanostructures inside solid state environment have been interestingly observed. The 'on' and 'off' events in the light emission of individual InGaN nanoclusters have been monitored as a function of time. In order to understand physical mechanism of the blinking behavior, statistical analysis of both 'on' and 'off' time durations has been performed.
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Description | Session 1P5: Optical Properties of Semiconductors and Nanostructures 2 |
Persistent Identifier | http://hdl.handle.net/10722/240857 |
ISSN | 2020 SCImago Journal Rankings: 0.159 |
DC Field | Value | Language |
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dc.contributor.author | Xu, SJ | - |
dc.contributor.author | Zhao, DG | - |
dc.contributor.author | Yang, H | - |
dc.date.accessioned | 2017-05-22T08:26:06Z | - |
dc.date.available | 2017-05-22T08:26:06Z | - |
dc.date.issued | 2010 | - |
dc.identifier.citation | The 28th Progress In Electromagnetics Research Symposium Abstracts, Cambridge, USA, 5-8 July 2010. In PIERS 2010 in Cambridge Abstracts, p. 182 | - |
dc.identifier.issn | 1559-9450 | - |
dc.identifier.uri | http://hdl.handle.net/10722/240857 | - |
dc.description | Session 1P5: Optical Properties of Semiconductors and Nanostructures 2 | - |
dc.description.abstract | In this talk, we report an observation of luminescence imaging and blinking behavior of single indium rich nanoclusters spontaneously formed inside GaN matrix. At room temperature, light emissions from individual nanoclusters have been spatially and spectrally detected using scanning confocal micro-Raman microscopy/spectroscopy system. Under the continuous excitation of continuous-wave laser, spectral jump and intensity intermittence of light emissions from these individual nanostructures inside solid state environment have been interestingly observed. The 'on' and 'off' events in the light emission of individual InGaN nanoclusters have been monitored as a function of time. In order to understand physical mechanism of the blinking behavior, statistical analysis of both 'on' and 'off' time durations has been performed. | - |
dc.language | eng | - |
dc.publisher | Electromagnetics Academy. | - |
dc.relation.ispartof | Progress in Electromagnetics Research Symposium Abstracts | - |
dc.title | Luminescence imaging and blinking behavior of individual InGaN nanoclusters formed in GaN matrix | - |
dc.type | Conference_Paper | - |
dc.identifier.email | Xu, SJ: sjxu@hkucc.hku.hk | - |
dc.identifier.authority | Xu, SJ=rp00821 | - |
dc.identifier.hkuros | 181241 | - |
dc.identifier.spage | 182 | - |
dc.identifier.epage | 182 | - |
dc.publisher.place | United States | - |
dc.identifier.issnl | 1559-9450 | - |