Showing results 3 to 10 of 10
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| Title | Author(s) | Issue Date | Views | |
|---|---|---|---|---|
| 2008 | 130 | |||
Interface structure and phase of epitaxial srtio3 (110) thin films grown directly on silicon Journal:Applied Physics Letters | 2005 | 113 | ||
Investigation of dislocations and traps in MBE grown p-InGaAs/GaAs heterostructures Journal:Thin Solid Films | 1997 | 63 | ||
Large Negative Thermal Quenching and Broadening Lineshape Analysis of Acceptor-Associated Yellow Luminescence in Si-Doped GaN Journal:The Journal of Physical Chemistry C | 2022 | |||
Microstructure and micro-Raman studies of nitridation and structure transition of gallium oxide nanowires Journal:Materials Characterization | 2012 | 56 | ||
| 2006 | 168 | |||
Quantum dissipation and broadening mechanisms due to electron-phonon interactions in self-formed InGaN quantum dots Journal:Applied Physics Letters | 2006 | 167 | ||
TEM study of the microstructure and interfaces in YBa2Cu3Oy thin films grown on silicon with a Eu2CuO4/Y-ZrO2 bi-layer buffer Journal:Surface Review and Letters | 2007 | 112 |