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Article: Interface structure and phase of epitaxial srtio3 (110) thin films grown directly on silicon
Title | Interface structure and phase of epitaxial srtio3 (110) thin films grown directly on silicon |
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Authors | |
Keywords | Physics Engineering |
Issue Date | 2005 |
Publisher | American Institute of Physics. The Journal's web site is located at http://apl.aip.org/ |
Citation | Applied Physics Letters, 2005, v. 87 n. 13, article no. 131908, p. 1-3 How to Cite? |
Abstract | The interface structure and phase between SrTiO3 (110) on Si (100) have been investigated using high-resolution transmission electron microscopy and x-ray photoelectron spectroscopy. The SrTiO3/Si interface was found to be epitaxially crystallized without any amorphous oxide layer. The formation of Sr silicate at the interface was suggested by considering the fact of the core-level spectra of the Si 2p, O 1s, and Sr 3d. Our results suggest that the presence of a coincident site lattice at the interface between Si and a Sr silicate and/or SrTiO3 may help to stabilize SrTiO3 in the epitaxial orientation reported in the work. |
Persistent Identifier | http://hdl.handle.net/10722/45250 |
ISSN | 2023 Impact Factor: 3.5 2023 SCImago Journal Rankings: 0.976 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Hao, JH | en_HK |
dc.contributor.author | Gao, J | en_HK |
dc.contributor.author | Wang, Z | en_HK |
dc.contributor.author | Yu, DP | en_HK |
dc.date.accessioned | 2007-10-30T06:21:01Z | - |
dc.date.available | 2007-10-30T06:21:01Z | - |
dc.date.issued | 2005 | en_HK |
dc.identifier.citation | Applied Physics Letters, 2005, v. 87 n. 13, article no. 131908, p. 1-3 | - |
dc.identifier.issn | 0003-6951 | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/45250 | - |
dc.description.abstract | The interface structure and phase between SrTiO3 (110) on Si (100) have been investigated using high-resolution transmission electron microscopy and x-ray photoelectron spectroscopy. The SrTiO3/Si interface was found to be epitaxially crystallized without any amorphous oxide layer. The formation of Sr silicate at the interface was suggested by considering the fact of the core-level spectra of the Si 2p, O 1s, and Sr 3d. Our results suggest that the presence of a coincident site lattice at the interface between Si and a Sr silicate and/or SrTiO3 may help to stabilize SrTiO3 in the epitaxial orientation reported in the work. | en_HK |
dc.format.extent | 306794 bytes | - |
dc.format.extent | 1963 bytes | - |
dc.format.extent | 4892 bytes | - |
dc.format.mimetype | application/pdf | - |
dc.format.mimetype | text/plain | - |
dc.format.mimetype | text/plain | - |
dc.language | eng | en_HK |
dc.publisher | American Institute of Physics. The Journal's web site is located at http://apl.aip.org/ | en_HK |
dc.relation.ispartof | Applied Physics Letters | - |
dc.rights | Copyright 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2005, v. 87 n. 13, article no. 131908, p. 1-3 and may be found at https://doi.org/10.1063/1.2061859 | - |
dc.subject | Physics Engineering | en_HK |
dc.title | Interface structure and phase of epitaxial srtio3 (110) thin films grown directly on silicon | en_HK |
dc.type | Article | en_HK |
dc.identifier.openurl | http://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=87&issue=13&spage=131908:1&epage=3&date=2005&atitle=Interface+structure+and+phase+of+epitaxial+srtio3+(110)+thin+films+grown+directly+on+silicon | en_HK |
dc.description.nature | published_or_final_version | en_HK |
dc.identifier.doi | 10.1063/1.2061859 | en_HK |
dc.identifier.scopus | eid_2-s2.0-28344445559 | - |
dc.identifier.volume | 87 | - |
dc.identifier.issue | 13 | - |
dc.identifier.spage | article no. 131908, p. 1 | - |
dc.identifier.epage | article no. 131908, p. 3 | - |
dc.identifier.isi | WOS:000232060200019 | - |
dc.identifier.issnl | 0003-6951 | - |