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Article: Interface structure and phase of epitaxial srtio3 (110) thin films grown directly on silicon

TitleInterface structure and phase of epitaxial srtio3 (110) thin films grown directly on silicon
Authors
Hao, JHGao, JWang, ZYu, DP
KeywordsPhysics Engineering
Issue Date2005
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2005, v. 87 n. 13, article no. 131908, p. 1-3 How to Cite?
DOI: http://dx.doi.org/10.1063/1.2061859
AbstractThe interface structure and phase between SrTiO3 (110) on Si (100) have been investigated using high-resolution transmission electron microscopy and x-ray photoelectron spectroscopy. The SrTiO3/Si interface was found to be epitaxially crystallized without any amorphous oxide layer. The formation of Sr silicate at the interface was suggested by considering the fact of the core-level spectra of the Si 2p, O 1s, and Sr 3d. Our results suggest that the presence of a coincident site lattice at the interface between Si and a Sr silicate and/or SrTiO3 may help to stabilize SrTiO3 in the epitaxial orientation reported in the work.
Persistent Identifierhttp://hdl.handle.net/10722/45250
ISSN
0003-6951
2021 Impact Factor: 3.971
2020 SCImago Journal Rankings: 1.182
ISI Accession Number ID
WOS:000232060200019

 

DC FieldValueLanguage
dc.contributor.authorHao, JHen_HK
dc.contributor.authorGao, Jen_HK
dc.contributor.authorWang, Zen_HK
dc.contributor.authorYu, DPen_HK
dc.date.accessioned2007-10-30T06:21:01Z-
dc.date.available2007-10-30T06:21:01Z-
dc.date.issued2005en_HK
dc.identifier.citationApplied Physics Letters, 2005, v. 87 n. 13, article no. 131908, p. 1-3-
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/45250-
dc.description.abstractThe interface structure and phase between SrTiO3 (110) on Si (100) have been investigated using high-resolution transmission electron microscopy and x-ray photoelectron spectroscopy. The SrTiO3/Si interface was found to be epitaxially crystallized without any amorphous oxide layer. The formation of Sr silicate at the interface was suggested by considering the fact of the core-level spectra of the Si 2p, O 1s, and Sr 3d. Our results suggest that the presence of a coincident site lattice at the interface between Si and a Sr silicate and/or SrTiO3 may help to stabilize SrTiO3 in the epitaxial orientation reported in the work.en_HK
dc.format.extent306794 bytes-
dc.format.extent1963 bytes-
dc.format.extent4892 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Letters-
dc.rightsCopyright 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2005, v. 87 n. 13, article no. 131908, p. 1-3 and may be found at https://doi.org/10.1063/1.2061859-
dc.subjectPhysics Engineeringen_HK
dc.titleInterface structure and phase of epitaxial srtio3 (110) thin films grown directly on siliconen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=87&issue=13&spage=131908:1&epage=3&date=2005&atitle=Interface+structure+and+phase+of+epitaxial+srtio3+(110)+thin+films+grown+directly+on+siliconen_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.2061859en_HK
dc.identifier.scopuseid_2-s2.0-28344445559-
dc.identifier.volume87-
dc.identifier.issue13-
dc.identifier.spagearticle no. 131908, p. 1-
dc.identifier.epagearticle no. 131908, p. 3-
dc.identifier.isiWOS:000232060200019-
dc.identifier.issnl0003-6951-

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