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Title | Author(s) | Issue Date | Views | |
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Mo-Doped La2O3 as Charge-Trapping Layer for Improved Low-Voltage Flash-Memory Performance Journal:ECS Solid State Letters | 2013 | 32 | ||
Varying sputtering ambient and annealing gas to optimize the electrical properties of mos capacitor with HfLaO gate dielectric Proceeding/Conference:2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010 | 2010 | 117 |