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Article: Mo-Doped La2O3 as Charge-Trapping Layer for Improved Low-Voltage Flash-Memory Performance
| Title | Mo-Doped La2O3 as Charge-Trapping Layer for Improved Low-Voltage Flash-Memory Performance |
|---|---|
| Authors | |
| Issue Date | 2013 |
| Publisher | Electrochemical Society, Inc. The Journal's web site is located at http://ssl.ecsdl.org/ |
| Citation | ECS Solid State Letters , 2013, v. 2 n. 11, p. Q87-Q89 How to Cite? |
| Persistent Identifier | http://hdl.handle.net/10722/202919 |
| ISSN | 2016 Impact Factor: 1.184 |
| ISI Accession Number ID |
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Tao, QB | en_US |
| dc.contributor.author | Lai, PT | en_US |
| dc.date.accessioned | 2014-09-19T10:09:57Z | - |
| dc.date.available | 2014-09-19T10:09:57Z | - |
| dc.date.issued | 2013 | en_US |
| dc.identifier.citation | ECS Solid State Letters , 2013, v. 2 n. 11, p. Q87-Q89 | en_US |
| dc.identifier.issn | 2162-8742 | - |
| dc.identifier.uri | http://hdl.handle.net/10722/202919 | - |
| dc.language | eng | en_US |
| dc.publisher | Electrochemical Society, Inc. The Journal's web site is located at http://ssl.ecsdl.org/ | - |
| dc.relation.ispartof | ECS Solid State Letters | en_US |
| dc.rights | ECS Solid State Letters . Copyright © Electrochemical Society Inc. | - |
| dc.rights | © The Electrochemical Society, Inc. 2013. All rights reserved. Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS). The archival version of this work was published in ECS Solid State Letters , 2013, v. 2 n. 11, p. Q87-Q89 | - |
| dc.title | Mo-Doped La2O3 as Charge-Trapping Layer for Improved Low-Voltage Flash-Memory Performance | en_US |
| dc.type | Article | en_US |
| dc.identifier.email | Lai, PT: laip@eee.hku.hk | en_US |
| dc.identifier.authority | Lai, PT=rp00130 | en_US |
| dc.description.nature | postprint | - |
| dc.identifier.doi | 10.1149/2.006311ssl | - |
| dc.identifier.scopus | eid_2-s2.0-84888368614 | - |
| dc.identifier.hkuros | 240499 | en_US |
| dc.identifier.volume | 2 | en_US |
| dc.identifier.issue | 11 | - |
| dc.identifier.spage | Q87 | en_US |
| dc.identifier.epage | Q89 | en_US |
| dc.identifier.isi | WOS:000324582600011 | - |
| dc.publisher.place | United States | - |
| dc.identifier.issnl | 2162-8750 | - |