Showing results 4 to 5 of 5
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Title | Author(s) | Issue Date | |
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MoS<inf>2</inf> U-shape MOSFET with 10 nm channel length and poly-Si source/drain serving as seed for full wafer CVD MoS<inf>2</inf> availability Proceeding/Conference:Digest of Technical Papers - Symposium on VLSI Technology | 2016 | ||
TMD FinFET with 4 nm thin body and back gate control for future low power technology Proceeding/Conference:International Electron Devices Meeting (IEDM) | 2015 |