Showing results 1 to 6 of 6
| Title | Author(s) | Issue Date | |
|---|---|---|---|
Demonstrating the ICeGaN integrated power HEMT approach towards extreme gate robustness Proceeding/Conference:Proceedings of the International Semiconductor Conference, CAS | 2023 | ||
Dynamic Gate Breakdown of p-Gate GaN HEMTs in Inductive Power Switching Journal:IEEE Electron Device Letters | 2023 | ||
Effects of Y incorporation in TaON gate dielectric on electrical performance of GaAs metal-oxide-semiconductor capacitor Journal:Physica Status Solidi - Rapid Research Letters | 2016 | ||
Gate Lifetime of P-Gate GaN HEMT in Inductive Power Switching Proceeding/Conference:Proceedings of the International Symposium on Power Semiconductor Devices and ICs | 2023 | ||
Gate Robustness and Reliability of P-Gate GaN HEMT Evaluated by a Circuit Method Journal:IEEE Transactions on Power Electronics | 2024 | ||
Gate Switching Lifetime of P-Gate GaN HEMT: Circuit Characterization and Generalized Model Journal:IEEE Transactions on Power Electronics | 2024 |